2SK119 Search Results

2SK1198

Abstract: TCA 700 v T04CO
Contextual Info: MOS Field Effect P ow er Transistor 2SK1198 N ^ ^ ^ N 0r7 — M O S FET m j i m 2SK1198 li, N MOS F E T ffits :* * <, ? * > m x ^ y f v r t m & i s t i x h ' > , ^ E l ¥ fi : mm) 1 0 .5 M A X . s s jg & x 4 4 .7 M A X . AC 7 r-7 °? Î : t* Iz M m X to

5Bt fet

Abstract: 2SK119 transistor afr 46 transistor T700 transistor afr 22 Tic T430 t280 930 T430 T030 T108
Contextual Info: NEC j ! T f / \ f X h =7 J u n c tio n Field E ffect T ra n s is to r A 2 S 1 K 1 9 JH /.$? -*tt ilfix U ffl Silicon N-Channel Junction FET DC Amplifier, High Frequency Amplifier Industrial Use ? l 4 t ± \ z £ f) 2SK119Ü, <, o i) — 0 /PA C K A G E DIMENSIONS

N and P MOSFET

Contextual Info: /X*7— M O SFET Power MOSFET N-Channel, Enhancement type • O U T L IN E D IM E N S IO N S Case ." E -pack 2SK1194 2.55 ±0-2 230V 0.5A 0.5 * 0-! \ 0.5 1.1 ± 0-2 \ Gate . / Source Drain / ■ Unit • R A TIN G S A bsolute Maximum R atings m It e m B J

2SK1191

Abstract: transistor 2SK1191 FM20 AT20N
Contextual Info: 2SK1191 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol min Unit max VDSS 60 V V(BR) DSS V I D = 250µA, VGS = 0V ±20 V I GSS ±500 nA VGS = ±20V ID ±30 A I DSS 250 µA VDS = 60V, VGS = 0V

2SK1190

Abstract: FM20
Contextual Info: 2SK1190 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Ratings Unit Symbol min (Ta = 25ºC) Ratings typ 60 V V(BR) DSS V I D = 250µA, VGS = 0V ±20 V I GSS ±500 nA VGS = ±20V ID ±22 A I DSS 250 µA VDS = 60V, VGS = 0V A

2SK1395

Abstract: 2sk2006 2SK1539 2SK1685
Contextual Info: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695

Contextual Info: M OSFET J 'ì * ? • Wfé\f->£IH 7 x>/\> .*>bg> Power MOSFET N-Channel, Enhancem ent ty p e O U T L I N E D IM E N S IO N S 2SK1195 230V 1.5A ■ R A T IN G S A b s o lu te M axim um R a tin g s m s Ite m te Ife \ar Conditions y- Symbol « ÏF S JE S to ra g e T e m p e ra tu re

2SK1192

Abstract: FM20
Contextual Info: 2SK1192 External dimensions 2 . FM100 Absolute Maximum Ratings Symbol Ta = 25ºC Ratings Unit Symbol min Unit max Conditions VDSS 60 V V(BR) DSS V I D = 250µA, VGS = 0V ±20 V I GSS ±500 nA VGS = ±20V ID ±40 A I DSS 250 µA VDS = 60V, VGS = 0V A

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

2SK1197

Contextual Info: 2SK1197 SILICON N-CHANNEL ENHANCEMENT MOS FET m m & ^ C “ 2 00p F • • r - h • v - x r i 500V typ. • y u j > •y - x m lOOOVmin., 1500V typ. • JiIÍSÜT K ì f V X ó<± ë i,>0 1. Source 2. Drain 3. G ate (Dim ensions in mm) I ÿ/s I = 1 5 0 m S typ.

2SK1192

Contextual Info: 2SK1192 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V(BR) DSS VGSS ±20 V I GSS ID ±40 A I DSS A VTH 2.0 W Re (yfs) 13 ±160 (Tch ID (pulse) 150ºC) 90 (Tc = 25ºC)

LT 672

Abstract: yf7a 2SK1195 F1E23 L200
Contextual Info: S M D M *> U -X yt^-MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE • S S O U T L IN E D IM E N S IO N S 2SK1195 F 1 E 2 3 2 3 0 V 1.5A ■ R A TIN G S A b s o lu te M axim u m R a tin g s m a ft IE -¥■ Sym bol Ite m S to r a g e T e m p e ra tu r e T stg

2sk129

Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119

2SK1198

Abstract: ss1212 ScansUX881 nec 2501 LD
Contextual Info: NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor is N-channel designed for MOS switching Field Effect Power power supplies, PACKAGE DIM EN SIO N S AC in millimeters inches Adapters. FEATURES •

Contextual Info: SHINDENGEN VR Series Power MOSFET 2SK1194 N-Channel Enhancement type OUTLINE DIMENSIONS F05E23 Case : E-pack (Unit : mm) 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters

Contextual Info: SMDÜSi* / ' - % / t 7 —MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE VtWi-h Æ O U T L IN E D IM E N S IO N S 2SK1195 F 1 E 2 3 ) 230V 1.5A • Æ fê * R A TIN G S ■ A b s o lu te M a x im u m m Ite m H R a tin g s y- m & Sy m b ol fK7Hii)& ft m C o n d itio n s

2SH14

Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
Contextual Info: POWER MOS FET •G eneral amplifier Package code Type No. -tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 to Ratings Vos* j 10 Vosx (V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO» Ciss Status (S itili. <PF)«W>

Contextual Info: SHINDENGEN VR Series Power MOSFET 2SK1195 N-Channel Enhancement type OUTLINE DIMENSIONS F1E23 Case : E-pack (Unit : mm) 230V 1.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters

2SK1191

Abstract: transistor 2SK1191 FM20
Contextual Info: 2SK1191 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V(BR) DSS VGSS ±20 V I GSS ID ±30 A I DSS A VTH 2.0 40 (Tc = 25ºC) W Re (yfs) 13 ±120 (Tch ID (pulse) PD 150ºC)

Contextual Info: SMDÜW p S 'U -X / t 9 —MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE • N- f v Z j l r , X > A > X X > b M O U T L IN E D IM E N S IO N S Case : E-pack 2SK1194 F 0 5 E 2 3 2.55 ±0 -2 230V 0.5a 0 .5 ± 0 1 0.5 1.1 = [U nit • mm] ■ ÎÈ fê it R A TIN G S

LL200C

Contextual Info: M OSFET i.»\>7.*>bW Power MOSFET • N-Channel, Enhancement type O U T L IN E D IM E N S IO N S 2SK1194 230V 0.5A ■ æ fê * R A T IN G S Absolute Maximum Ratings m Item b2 -fSymbol s IS ÿ fit S to ra g e T em p eratu re ~f~ jf» Jf. Channel T em perature

2SK1198

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor

2SK1191

Abstract: transistor 2SK1191 FM20
Contextual Info: 2SK1191 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V(BR) DSS VGSS ±20 V I GSS ID ±30 A I DSS A VTH 2.0 13 ±120 (Tch ID (pulse) 150ºC) min (Ta = 25ºC) Ratings

2SK1366

Abstract: 2SK2240 2SK1713 2SK1173 16 FM 40 2sk2239 2sk1711 2SK2156A 2SK1177 2SK2156
Contextual Info: Power MOSFETs Power MOSFETs ÎËf? te üSfiA _'JJL Pd Te = 25"C} (W Igclifcal^har^tafBtics (Ta * 25C) « {Vcas = 1 0 V J Remarks <W ) m (m J ) 'w 2SK1188 10 2.1 0 2 300 FM20 2SK1189 15 f;. 2 0 1 640 FM 20 2SK2419 22 36 17 0.05 1250 FM20 2SK1190 22 35 '7