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2SJ200 Datasheets (17)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SJ200	Toshiba	Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10)	Original	PDF	273.02KB	5
2SJ200	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SJ200	Toshiba	P-Channel MOSFET	Original	PDF	156.99KB	4
2SJ200	Toshiba		Original	PDF	44.05KB	9
2SJ200	Unknown	FET Data Book	Scan	PDF	108.17KB	2
2SJ200	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	113.15KB	1
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	58.42KB	1
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	62.59KB	1
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	63.92KB	1
2SJ200	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF	182.41KB	3
2SJ200	Toshiba	Field Effect Transistor Silicon P Channel MOS Type	Scan	PDF	182.41KB	3
2SJ200	Toshiba	Silicon P channel field effect transistor for high power amplifier applications	Scan	PDF	164.74KB	3
2SJ200-O	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF	291.66KB	5
2SJ200O	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF	182.41KB	3

2SJ200-Y	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF	291.66KB	5
2SJ200Y	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF	182.41KB	3
2SJ200-Y(F)	Toshiba	2SJ200 - MOSFET P-CH 180V 10A TO-3	Original	PDF	291.66KB	5

2SJ200 Price and Stock

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TE Connectivity ROX2SJ200K RES 200K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	ROX2SJ200K	Ammo Pack	4,056		1,000	1 - 10 - 100 - 1000 $0.10 10000 $0.08	Buy Now
	ROX2SJ200K	Cut Tape	1,056		1	1 $0.34 10 $0.22 100 $0.15 1000 $0.11 10000 $0.11	Buy Now
	ROX2SJ200K	Ammo Pack			1,000	1 - 10 - 100 - 1000 $0.12 10000 $0.12	Buy Now
Avnet Americas	ROX2SJ200K	Box		15 Weeks, 1 Days	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics ()	ROX2SJ200K		7,562			1 $0.29 10 $0.18 100 $0.12 1000 $0.07 10000 $0.06	Buy Now
	ROX2SJ200K		7,531			1 $0.34 10 $0.22 100 $0.14 1000 $0.08 10000 $0.06	Buy Now
Avnet Abacus	ROX2SJ200K			18 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	ROX2SJ200K					1 - 10 - 100 - 1000 $0.08 10000 $0.07	Buy Now

TE Connectivity	ROX2SJ200K		4,056		1	1 $0.19 10 $0.19 100 $0.18 1000 $0.17 10000 $0.16	Buy Now
Panasonic Electronic Components ERG-2SJ200 RES 20 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ200	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	ERG-2SJ200		1,000			1 - 10 - 100 - 1000 $0.04 10000 $0.04	Buy Now
Master Electronics	ERG-2SJ200		1,000			1 - 10 - 100 - 1000 $0.04 10000 $0.04	Buy Now
Panasonic Electronic Components ERG-2SJ200V RES 20 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ200V	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERG-2SJ200A RES 20 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ200A	Tape & Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Industry ERG2SJ200E Res Metal Oxide Film 20 Ohm 5% 2W ±350ppm/°C Conformal Coated RDL Tape and Box Automotive AEC-Q200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	ERG2SJ200E		2,000		1	1 $0.38 10 $0.38 100 $0.19 1000 $0.07 10000 $0.07	Buy Now

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2SJ200 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
toshiba j200 Abstract: 2SJ200 2SK1529 SC-65 Contextual Info: TOSHIBA 2SJ200 SILICON P CHANNEL MOS TYPE 2SJ200 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 1 5.9 M A X. 03.2 ±0.2 X / O — , I- \|l\| r Is 2.° * M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Drain-Souree Voltage vd ss Gate-Souree Voltage vg ss	OCR Scan	2SJ200 2SK1529 toshiba j200 2SJ200 SC-65	PDF
Contextual Info: TOSHIBA 2SJ200 T O S H IB A FIELD EFFECT TR A N S IS TO R SILIC O N P C H A N N E L M O S TYPE 2SJ200 Unit in mm H IG H P O W E R A M P L IF IE R A P P L IC A T IO N • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.)	OCR Scan	2SJ200 2SK1529	PDF
c 111 transistor Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : \| Yfs \| “4.OS (TYP.) . Complementary to 2SJ200	OCR Scan	2SK1529 2SJ200 Ta-25 Tcm25 SC-65 2-16C1B c 111 transistor	PDF
Contextual Info: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type rc-MOS II Audio Frequency Power Amplifier Application Features • High Breakdown Voltage - VDSS = -180V (Min.) • High Forward Transfer Admittance - Y fs ' = 4 . O S (T y p .) • Complementary to 2SK1529	OCR Scan	2SJ200 -180V 2SK1529	PDF
2SJ200 Abstract: 6C1B Contextual Info: I 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage X5.9MAX 03.2 ±0.2 : V jjss “"180V MIN. . High Forward Transfer Admittance : \| Yfs \| “4.OS (TYP.) r . . Complementary to 2SK1529	OCR Scan	2SJ200 2SK1529 2SJ200 6C1B	PDF
Contextual Info: TOSHIBA 2SJ200 TO S H IB A FIELD EFFECT TRANSISTOR SILICON P CHANN EL MOS TYPE 2SJ200 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.) Complementary to 2SK1529	OCR Scan	2SJ200 --180V 2SK1529	PDF
K1529 Abstract: 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200 Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 180V l High forward transfer admittance : \|Yfs\| = 4.0 S typ. l Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200	PDF
2SJ200 Abstract: 2SK1529 transistor application Toshiba 2SJ Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529 transistor application Toshiba 2SJ	PDF
K1529 Abstract: 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ	PDF
2SJ200 Abstract: 2SJ20 Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2SJ20	PDF
toshiba j200 Contextual Info: T O SH IB A 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 SJ 2QQ Unit in mm HIGH POWER AMPLIFIER APPLICATION 1 5.9 MAX. High Breakdown Voltage : V j}ss= —180V High Forward Transfer Admittance : \|Yfg\| = 4.0S Typ. Complementary to 2SK1529	OCR Scan	2SJ200 toshiba j200	PDF
Contextual Info: TOSHIBA 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm 1 5.9 M A X. • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4.0S Typ. • Complementary to 2SK 1529	OCR Scan	2SJ200 --180V SC-65 2-16C1B	PDF
k1529 Abstract: 2SJ200 2SK1529 SC-65 Contextual Info: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION IN D U S T R IA L A P P L IC A T IO N S U n it in mm : V j g g = 180V • H igh Forw ard Transfer Adm ittance : \|Yfs\|= 4.0S Typ.) • Com plem entary to 2SJ200	OCR Scan	2SK1529 2SJ200 k1529 2SJ200 2SK1529 SC-65	PDF
Contextual Info: TOSHIBA 2SK1529 SILICON N CHANNEL MOS TYPE High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ. Complementary to 2SJ200 1 5 .9 M A X . 3.3MAX. . , 2.0 • • • INDUSTRIAL APPLICATIONS Unit in mm M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SK1529 2SJ200	PDF

k1529 Abstract: 2sk1529 2sj200 2SK1529 2SJ200 Contextual Info: 2SK1529 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK1529 ○ 低周波電力増幅用単位: mm z 高耐圧です。 : VDSS = 180 V z 高順方向伝達アドミタンスです。 : \|Yfs\| = 4.0 S 標準 z 2SJ200 とコンプリメンタリになります。	Original	2SK1529 2SJ200 K1529 SC-65SC 2-16C1B 2002/95/EC) k1529 2sk1529 2sj200 2SK1529 2SJ200	PDF
k1529 Abstract: 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 k1529 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b	PDF
2sk1603 Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915 Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378	OCR Scan	2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2sk1603 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915	PDF
k1529 Abstract: 2SJ200 2SK1529 SC-65 Contextual Info: TO SH IBA 2SK1529 SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION High Breakdown Voltage : V d SS = 180 V High Forward Transfer Admittance : \|Yfs\| = 4.0 S Typ. Complementary to 2SJ200 1 5.9 M A X . O X I 1" - . CO o +1 . o f	OCR Scan	2SK1529 2SJ200 k1529 2SK1529 SC-65	PDF
toshiba j200 Abstract: 2SJ200 2SK1529 SC-65 Contextual Info: TOSHIBA 2SJ200 Unit in mm 1 5.9 M A X . 0 3 .2 ± 0 .2 i in / O SYMBOL vd ss v g ss :D Pd Teh Tstg RATING -1 8 0 ±20 -1 0 120 150 -5 5 -1 5 0 Pi UNIT V V A W °C °C MARKING Lot Number TYPE n 0 — Month Starting from Alphabet A uuu the Christian Era) >	OCR Scan	2SJ200 2SK1529 toshiba j200 2SJ200 SC-65	PDF
2SJ200 Abstract: 2sk1529/2sj200 Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Tc = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529/2sj200	PDF
2SJ200 Abstract: 2sk1529 2sj200 Toshiba 2SJ Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529 2sj200 Toshiba 2SJ	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SK1529 Contextual Info: TO SHIBA 2SK1529 Field Effect Transistor Unit in m m 15.9 MAX Silicon N Channel MOS Type rc-MOS II # 3 .2 ±0.2 High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Adm ittance - "Yfs = 4.OS (Typ.)	OCR Scan	2SK1529 2SJ200 SC-65 2SK1529	PDF
TRANSISTOR DATASHEET D1555 Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440	Original	2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878	PDF

2SJ200 Search Results

2SJ200 Datasheets (17)

2SJ200 Price and Stock

TE Connectivity ROX2SJ200K

Panasonic Electronic Components ERG-2SJ200

Panasonic Electronic Components ERG-2SJ200V

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2SJ200 Datasheets Context Search

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TRANSISTOR DATASHEET D1555