2SD662 R Search Results

2SD0662

Abstract: 2SD0662B 2SD662 2SD662B
Contextual Info: Transistors 2SD0662, 2SD0662B 2SD662, 2SD662B Silicon NPN epitaxial planar type For high breakdown voltage general amplification Unit: mm 2.5±0.1 Parameter Symbol Rating Unit VCBO 250 V 2SD0662 2SD0662B (1.0) R 0.9 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 400

2SD0662

Abstract: 2SD0662B 2SD662 2SD662B specification of 555 ic
Contextual Info: Transistor 2SD0662, 2SD0662B 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) (0.85) 0.45±0.05 Parameter Symbol 2SD0662 base voltage 2SD0662B

Contextual Info: Transistor 2SD0662, 2SD0662B 2SD662, 2SD662B Silicon NPN epitaxial planar type For high breakdown voltage general amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) (0.85) 0.45±0.05 Parameter Symbol 2SD0662 base voltage 2SD0662B

2SB694H

Abstract: 2sd717 2SD689 2SD668A 2SB646 2sb678 2SB686 2SD663 2SD666 2SD706
Contextual Info: - 222 - Ta=25'C, * E(](ÎTc=25<C M £ ít rrj £ ¿2! «CEu (V) 2SD661 fâT LF LN A 2SD661A tëT tôT LF LN A 2SD662 2SD662B 2SD663 2SD666 2SD666A 2SD667 2SD667A 2SD668 2SD668A fôT m ±nm ai B aL ai Hi hä B5: 2SD670H BÎL HÎL BÍL ZÒUOM i l i 2SD669

2SD3330

Abstract: 2SD333 2sc2673 2SD661A DTC144GS RT1N144C 2SC3870 2SD638 8T1N144S 2SD637
Contextual Info: 2SC 4034 2SC 4035 * * SANYO 3K S TO SHIBA m H ^ B HITACHI ±L « ± a FUJITSU tö T MATSUSHITA □— A 2SD661A □— A 2SD662 □— A 2SC 4036 2SC 4037 « Manuf. O tt ED m € Type No. m = MITSUBISHI □ — A ROHM 2SC1914A 2SC1613A 2SC1651 2SÜ662 □— A

KA 3264

Abstract: 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371
Contextual Info: - 158 - s « Type No. tt £ Manuf. 2SC 3259 * S tS t c 2SC 3260 * ífM&TE 2SC 3261 „ « S Æ X SANYO X NEC B ÍL HITACHI ^ 2SC2555 2SC3322 fé T MATSUSHITA ✓ JE 2SC 3266 ✓ S 3£ 2SD1246 2SC 3267 * $ 2SD1246 2SC 3268 3t $ 2SD1295 □- A 2SC2271 □- A

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440