Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD359 TRANSISTOR EQUIVALENT Search Results

    2SD359 TRANSISTOR EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    2SD359 TRANSISTOR EQUIVALENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sc1943 circuit diagram

    Abstract: TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped,


    Original
    bu323ztip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sc1943 circuit diagramtip42c diagrampin diagram mje13003transistor tip41c schematic diagrambd139 transistor circuit diagramtip31 npn transistor diagram2n3055 4d2n3055 to-218 packagebu108tip122 tip127 audio amp schematic PDF

    c 3421 transistor

    Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability


    Original
    bu208atip73btip74tip74a+15tip74btip75tip75atip75btip75c2n6488c 3421 transistorbu108transistor equivalent of bu406equivalent transistor 2n3055bu126 motorola2sd165bc 574 transistord 1163 a2n4906 motorola PDF

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


    Original
    bu323aptip73btip74tip74a+15tip74btip75tip75atip75btip75cautomotive ignition tip162bc337 cross-referencebu108bd390 cross referencereplacement transistor bc337bux48a2sd1815 "cross referencetip102 darlington transistormotorola mj15022mj1000 PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original
    mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar PDF

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


    Original
    tip47e69369mjf47tip73b+14tip74tip74atip74btip75tip75atip75btransistor bc 384bu108bd139 equivalent transistor2n3055 equivalentrca1c03transistor bc 574bu326bu100 PDF

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


    Original
    buv20tip73btip74tip74a+12tip74btip75tip75atip75btip75c2n6488bu1082sc194transistor bc 5742sc1419bu326bu100 PDF

    2SC124

    Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS


    Original
    2n51912n51922n51942n5195+15tip73btip74tip74atip74btip75tip75a2sc1242n5195 motorolabu108bd238 equivalent2sa1046tip3055 equivalentbu806 complementbu326bu100 PDF

    BU108

    Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A


    Original
    buv22tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488bu108ir411transistor bc 2472n592mje24822sd6752sc1419bu326bu100buv22 equivalent PDF

    IR3001

    Abstract: pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 PNP MJF15031 Complementary Power Transistors For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original
    mjf15030mjf15031mje15030mje15031+16e69369tip73btip74tip74atip74btip75ir3001pin configuration npn transistor bd679724 motorola npn transistor with heat padsimilar ic ba 3812pmd16k40transistor bc 5452sd331 npn transistorbu108bd130 to126pin configuration npn transistor tip41c PDF

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original
    mjl3281amjl1302atip73btip74+14tip74atip74btip75tip75asec tip41cmje4932sc14192sc32812n3055 audio output circuitbdw93mj1000bdw83buv98a cross reference2sc1943 PDF

    BU108

    Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A


    Original
    buv21tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488bu108transistor bc 5742n6107 motorola2sc1943mj3055 to2202sc1419bu326bu100mj*150332n6277 PDF

    tip122 tip127 audio amp

    Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power


    Original
    mj3281amj1302a204aatip73b+14tip74tip74atip74btip75tip122 tip127 audio ampbu108k 3569d44h1tip120mj1302a equivalent2sb595bdx54bu326bu100 PDF

    mje15033 replacement

    Abstract: BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 PNP MJD6039 Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.


    Original
    2n60342n6039mjd6036mjd6039+16pow32tip73btip74tip74atip74btip75mje15033 replacementbu1082sc25replacements for bdw84724 motorola npn transistor with heat padbdx54bd-375bu326bu1002sc144 PDF

    bdx54c equivalent

    Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc


    Original
    bdx53bbdx53c220abbdx54b+14bdx54ctip73btip74tip74abdx54c equivalentbox 53c darlington power transistortip122 d-pak packageall similar transistor 2sa715bdx53c motorolabu108transistor tip31amplifier 2sd718 2sb688 schematicbdx542n386 PDF

    TIP42C as regulator

    Abstract: BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems


    Original
    mje1123tip73btip74tip74a+15tip74btip75tip75atip75btip75ctip42c as regulatorbu1082sc103npn power darlington transistors high voltage high icm to-247nsp21002sd68bdx542sc1943mje24822sd675 PDF

    tip122 tip127 audio amp

    Abstract: MJ21194 2N555 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT MJ21193 Audio Power Amplifier mj802 BU326 BU108 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ21193* NPN MJ21194* Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.


    Original
    mj21193mj21194204aatip73b+11tip74tip74atip74btip75tip122 tip127 audio amp2n555tip127 tip122 audio amplifier circuitaudio power amplifier mj802bu326bu108bu100 PDF

    TIP34C equivalent

    Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A


    Original
    buv11tip73btip74tip74a+15tip74btip75tip75atip75btip75c2n6488tip34c equivalentbu108transistor bc 3845d2 6buv11 equivalentbdx542n3025 equivalentbu326bu100 PDF

    2SA1046

    Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and


    Original
    2n6547case32tip73btip74+13tip74atip74btip75tip75atip75b2sa1046tip147 pwmbu108to218 20a darlingtonbu326bu100mj423motorola transistor 2n6547 PDF

    BU108

    Abstract: 2SA1046 BDX54 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage


    Original
    2n57452n43982n5758tip73b+11tip74tip74atip74btip75tip75atip75bbu1082sa1046bdx54bu326bu100 PDF

    2SA1046

    Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.


    Original
    2n6251tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sa10462n3055bu108transistor k 3596bu326bu100tl mje2955tmje3055t2n31742sc936 PDF

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


    Original
    bandwi32tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488transistor 3569t4 3570 dpakbu 508 transistorbu108bdw93cst t4 3580transistor t4 3570bu326bu100mj*15033 PDF

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


    Original
    mje350tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sc1419tip54mj1000mj15024 mj150252sc1943se9302mje24822sd675bu326bu108 PDF

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


    Original
    mje200mje210tip73btip74+13tip74atip74btip75tip75atip75btip75cmotorola case 772n3055bu1082sc15bdw93c applicationsbu326bu100 PDF

    TIP35C transistor replacement

    Abstract: TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V


    Original
    tip73btip74tip74atip74b+15tip75tip75atip75btip75c2n64882n6490tip35c transistor replacementtip35c replacement2n3055 equivalentbu108d45h11 equivalent replacementbdx542n3772 equivalentbu326bu100 PDF