BUV22 Search Results

BUW23

Contextual Info: SEMELAB LTD 37E J> 6133187 DDDOOSb 7 • SMLB SEMELABI 1VpeN0- Option'111' Polarity Packa9e VcEO t ^ hFE« VCE/*C BUV18 BUV19 BUV20 BUV21 BUV22 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN 11 * * * * TO 3 T03 T03 TO 3 T03 60 80 125 200 250 90 50

BUV20

Contextual Info: rz 7 ^ 7 # SGS-THOMSON BUV20/BUV21 BUV22 [ïffloeœluiera «® HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES . NPN TRANSISTOR . HIGH CURRENT CAPABILITY . FAST SWITCHING SPEED . HIGH RUGGEDNESS APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL

Vce-200V 20a

Abstract: 200V transistor npn 10a 300V transistor npn 2a BUV22 equivalent BUV22
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV22 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain: hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high power

BUV22 equivalent

Abstract: BUV22
Contextual Info: ON Semiconductort BUV22 SWITCHMODEt Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: • • HFE min. = 20 at IC = 10 A

Contextual Info: MOTOROLA O rder this docum ent by BUV22/D SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications.

BUV22

Abstract: SILICON HIGH POWER bipolar npn TRANSISTOR 851 MOTOROLA
Contextual Info: MOTOROLA Order this document by BUV22/D SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications.

BUV22G

Abstract: BUV22
Contextual Info: BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain:

Contextual Info: BUV22 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

buv22

Abstract: BUV21
Contextual Info: rZ Z b u V 20 B u V21 BUV22 S G S -T H O M S O N « K L E M M ! ^ 7 # HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES . NPN TRANSISTOR . HIGH CURRENT CAPABILITY • FAST SWITCHING SPEED ■ HIGH RUGGEDNESS APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL

buv22

Contextual Info: ON Semiconductort BUV22 SWITCHMODEt Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: • • HFE min. = 20 at IC = 10 A

8M 250

Contextual Info: BUV22 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUV20

Abstract: BUV22 BUV21 buv22 data sheet BUV22 equivalent
Contextual Info: BUV20/BUV21 BUV22 HIGH CURRENT NPN SILICON TRANSISTOR DESCRIPTION The BUV20, BUV21 and BUV22 are silicon multiepitaxial planar NPN transistor in jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.

BUV22

Contextual Info: BUV22 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BU108

Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A

Contextual Info: BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain:

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

transistor buv18a

Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.