2SD313 E Search Results

2SD313

Abstract: transistor 2sd313 2sd313 applications 2sd313l QW-R203-001
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free

2sd313

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free

2SD811 TOSHIBA

Abstract: 2SC510 2SD2061 2SD877 RY 228 2SD2023 2SD1270 2SD880 2SC2120 2SD867
Contextual Info: * * * * * * i * * * * * * * * * * * * * * * M anuf. a m. X 3E •y-y'ry y-y'ry ■v-yry ■y-yry ■y-yírv yyry € h SANYO 2SD313 2SD313 n jft ^ TOSHIBA 2SC2120 2SD880 2SD880 2SC510 2SC510 2SC510 2SD877 2SD877 2SD877 NEC 2SD795 2SD795 M AL HITACHI 2SC1213

2SD 388 A

Abstract: 2Sd427 2SD313 2SC2320 2SD650 2SC2073 2SD867 2SC2204 2sd1138 2SD2061
Contextual Info: - m £ Type No. tt s Manuf. M 2SÜ1135 2SD1266A 2SC4007 2SD1135 2SD1266 2SÜ2023 2SD1135 2SDÎ266A 2SC4007 2SD526 2SD313 2SD880 2S0 366A fé T 2SD313 2SD526 2SD 367 fé T / H n ✓ M M z. 2SD 371 2SD1884 2SD820 2SD380 2SD867 2SD319 2SD427 2SD716 2SD 373 -

2sd313 equivalent

Abstract: 2SB507 2SD313 transistor 2sd313
Contextual Info: 2SD313 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ! TO-220 Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS TA=25oC Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC)

2SB507

Abstract: 2SD313 416W
Contextual Info: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier

2SD313

Abstract: 2sd313 equivalent 2SB507 416W
Contextual Info: SavantIC Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier

2SB507

Abstract: 2SD313 to25W 416W
Contextual Info: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier

TO220C

Abstract: 2SB507 2SD313
Contextual Info: JMnic Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier PINNING

2sd313 equivalent

Abstract: 2SD313
Contextual Info: DC COMPONENTS CO., LTD. 2SD313 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general-purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28

2SB507

Abstract: 2SD313
Contextual Info: Inchange Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier

2sj514

Abstract: 2SD330 2SB514 2SD313 J514 10WAF
Contextual Info: ["O rdering num ber: EN397E _ 2SB514/2SD330 PNP/NPN Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amp _ Applications Features •Especially suited for use in output stage of 10W AF Power amp • Complementary pair with the 2SB514 and 2SD313

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507

TRANSISTOR B507

Abstract: TRANSISTOR d313 D313 amplifier SD313 Sanyo D313 D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 12E D | 7Ti7D7ti 0004007 T - 33- 2SD313, 3 1 4 • 2012 201 oA 2SB507, 508 NPN/pnp Triple Diffused Planar Silicon Transistors Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.

Contextual Info: 2SD313 Plastic-Encapsulate Transistors NPN TO-220 Features Power dissipation PCM: 1.75 W Tamb=25℃ Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER

2SB507

Abstract: 2sd313 equivalent 2SD313 TRANSISTOR 2SB507
Contextual Info: PNP 2SB507 EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD313 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25°c)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB507 TO-220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A z DC Current Gain hFE=40~320@IC=-1A z Complementray to NPN 2SD313

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507

2sd313 equivalent

Abstract: 2SD313
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.75 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60

2SD330

Abstract: 2SB514 2SD313
Contextual Info: Ordering number:397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions • Especially suited for use in output stage of 10W AF Power amplifier. · Complementary pair with the 2SB514 and 2SD313.

2sd313 equivalent

Abstract: 2SD313 2sd313 applications 2SB507
Contextual Info: Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier

2SD313

Abstract: 2SB507 2sd313 equivalent 2SD313 E
Contextual Info: 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE

2SD330

Abstract: 2SB514 2SD313 EN397E sanyo D330 2SD 330
Contextual Info: Ordering num ber: EN397E 2SB514/2SD330 N 0.397E PNP/NPN Triple Diffused Planar Silicon Transistors SA\YO 50V/2A Low-Frequency Power Amp _ Applications Features • Especially suited for use in output stage of 10W AF Power amp • Complementary pair with the 2SB514 and 2SD313