2SD186 Search Results

2SD1733

Abstract: 2SB1181 2SB1241 2SB1260 2SD1768S 2SD1863 2SD1898 SC-72
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V

2SB1185

Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
Contextual Info: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

darlington Ib 0.1A

Abstract: darlington transistor for audio power application 2SD1980 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD2195 T100 DPT-100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316.

Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1

2SD1869

Abstract: jec amplifier 2SD1868
Contextual Info: HITACHI 2S D 1868, 2S D 1869 SILICON NPN EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER I. Î Catite y Eue D in s c iiu v n if ia m r o {JEDEC TO-92 MOO ) MAXIMUM COLLECTOR DISSIPATION CURVE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Icein Symbol 2SD18ÓS 2SD1869

EF 6802 P

Abstract: 2sd1864 2SB1066M 2SB1243 2SD1507M 2SB1066
Contextual Info: ROHM CO L T D — 4DE J> • 70201^ h 7 > V X £ /Transistors 2SD1507M / 2SD1864 - 2SD1507M 1 a O U IO O H ODGSÖTB T B R H M - 7 : 27-2l - J L kfÇ à rV T Jl 78I^-^NPN y lJ = l > Power Amp.

ScansU9X27

Contextual Info: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)

Contextual Info: Power Transistor 100V, 2A 2SD1980 / 2SD1867 zDimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. 2SD1980 6.5 5.1 2.3 2.5

2SD1862

Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3

Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

Contextual Info: Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2143 / 2SD1866 z Dimensions (Unit : mm) 1.5 5.5 (2) 5.1 2.3 (1) 0.9 0.75 2SD2143 6.5 zFeatures 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L"

2sd2397

Abstract: 2SD1866 2SD2143 2SD2212 T100 diode zener c05 transistor collector diode protection
Contextual Info: 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 !External dimensions (Units : mm) 2SD2212 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Built-in zener diode between collector and base.

2sb1184

Contextual Info: 2SB1184 PNP TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

4k resistor

Abstract: 2SB1183 2SB1239 2SD1759 2SD1861 T146
Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

2SB1183

Abstract: 2SB1239 2SD1759 2SD1861 T146
Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

SB1243

Abstract: 2SD1507M
Contextual Info: N "7 > y 7, $ /Transistors 2SD1507M 2SD1864 2SD1507M/2SD1864 X v 7 \ t f \ s —T f ó NPN y ' j a > h 7 > v * * Epitaxial Planar NPN Silicon Transistors ^Q^JitÉtyiÆ /Medium Power Amp. • ft* • ^ V J f^ jiO /'D im e n s io n s U nit : mm) 1) VcE(sat)

2SD1866

Contextual Info: 2SD1866 Transistor, NPN, Darlington Features Dimensions Units : mm • available in ATV TV2 package • built-in 60 V Z en er diode betw een collector and base 2SD1866 (ATV TV2) r 8 io r> I I • highly resistant to surges • d am per diode is incorporated

2SD1863

Abstract: 2sd1733 2SD1898
Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s 1) High ►External dimensions (Units: mm) V ceo . V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 4.5±g:? c+0.2 5 _ 0.1 3) Good hre linearity. 4) Low VcEfsat),

2SD1867

Abstract: BF800
Contextual Info: SPICE PARAMETER 2SD1867 * 2SD1867 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD1867 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9

IMX5T108

Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Contextual Info: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855

NPN EPTAXIAL PLANAR

Abstract: s915 2SD1227M 2SB911M
Contextual Info: ROHM CO LTD NOE D ooosam h 7 > y 7s £ / T ransistors IRHM 3 2SD1227M/2SD1862 7^-2 7-2. / 2SD1227EVI X fcf £ v T7^ 7 ° U ~ ^ NPN v U □ > h 7 > V X i ? Power Amp. Eptaxial Planar NPN Silicon Transistors ^ O V lO O Z 1 P c = 1 W t * t l'o 2) VCE sat |=160mV Typ. (at 1A)

Contextual Info: ROHM CO LTD 40E 7 0 2 0 1 *? « J> h 7 > S ' X $ / T ransistors 2 ^ 2 M RHH 2SD1661M/2SD1866 — 0005127 — — T '2 7 - 2 9 + * « f f if f l/ M e d lu m Po w er Amp. i Epitaxial Planar NPN Silico n Darlington T ra n sisto rs • W JI • W ïi'ît jÉ IS I/ 'D im e n s io n s U n ii : mm)

Contextual Info: 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors Power Transistor —40V, —2A 2SB 1183 / 2SB1239 / 2SB786F ^Absolute maximum ratings (Ta=25^C) 1 ) Darlington connection for high DC current gain. 2 ) Built-in 4 kO resistor between base and emitter.

2SD1760

Abstract: 2SB1184 2SB1243 2SD1864
Contextual Info: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1864 1.0±0.2 0.9 1.0 (3) 1.05 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V (1) Base (2) Collector (3) Emitter