2SD1472 Search Results

2SD1472

Abstract: DSA003730
Contextual Info: 2SD1472 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 2 1 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Flange ID 2 kΩ (Typ) 0.5 kΩ (Typ) 3 2SD1472 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SD1472

Abstract: 2SD1472CTTR-E
Contextual Info: 2SD1472 Silicon NPN Epitaxial, Darlington REJ03G0792-0200 Previous ADE-208-1155 Rev.2.00 Aug.10.2005 Application Low frequency power amplifier Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange)

2SD1472

Abstract: DSA003638
Contextual Info: 2SD1472 Silicon NPN Epitaxial, Darlington ADE-208-1155 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 2 1 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) ID 2 kΩ (Typ) 0.5 kΩ (Typ) 3 2SD1472 Absolute Maximum Ratings (Ta = 25°C)

Hitachi DSA002756

Contextual Info: 2SD1472 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline 2SD1472 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage

948 LG DIODE

Contextual Info: 2SD1472 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Outline UPAK 2 O 1 o1. 2. 3. 4. 948 Base Collector Emitter Collector Flange C — W v- 2kn (Typ) -VvV 0.5 kn (Typ) 2SD1472 Absolute Maximum Ratings (Ta = 25°C) Item

2SD1472

Abstract: IC00
Contextual Info: HITACHI 2SD1472-S IL IC O N N P N E P IT A X IA L L O W F R E Q U E N C Y T O W E R A M P L IF IE R m c t .1 I ?«í¡ *!> •] Otta 1 tttte J M Í 1' n v r t r k » i 4. OUfcut tn ram _L,e ! î ~j (U P A K ) A B S O L U T E M A X IM U M R A T IN G S < IV 2 5 * C )

KPS15

Abstract: fksc
Contextual Info: H ITACHI 2SD1472-SILICON NPN EPITAXIAL LOVVFREQljENCyPOVVEB AMPtlHER - •: -i t. T r.A UPAK « A S S O L U T E MAXIMUM RATINGS riV 25T> MAXIMUM COLLECTOR POWER DISSIPATION CURVE »S\ •ly>! item C f'll< \în r 1 1 S 'rs- \r ta g e U sil ». C o lirclcf io cmffiîr voitage

2SD1472

Abstract: 2SD1472CTTR-E
Contextual Info: 2SD1472 Silicon NPN Epitaxial, Darlington REJ03G0792-0300 Rev.3.00 Nov 30, 2007 Application Low frequency power amplifier Outline RENESAS Package code: PLZZ0004CA-A Package name: UPAK R 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 ID

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SD1472

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SD1472

Abstract: 2SD1472CTTR-E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

2SD1460

Abstract: 2SD1453 2SB1045 2SD1463 2SD1468 2SD1472 2SD1450 2SD1455 2SD1456 2SD1457
Contextual Info: - 250 - 8 Ta=25‘ C. *EP(ÎTc=25<C ak 2SD1450 2SD1453 2SD1455 2SD1456 2SD1457 -fa tt fâ T BÍL ByL B aL fôT 2SDH57A 2SD1458 fâ T m S LF A & vCBO 'CEO (V) (V) 25 Ici DC) (A) 20 0.5 Pc Pc* (W) (W) ICBO (max) (U A) 0. 3 Vc b m (min) ni- t Œ (max) 25 (V)

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Transistor 2SA 2SB 2SC 2SD

Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
Contextual Info: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

2SC5146

Abstract: TRANSISTOR 2SA 2SK type Transistor 2SD 2SC2545, 2SC2546 2SC2547 2sb darlington 2sb647 2sd667 2sc458lg 2SC2546 2sb74
Contextual Info: Product Profiles Bipolar PNP Transistor 2SA type Electrical characteristics Test Maximum ratings ^CEO Package SPAK TO-92 Type No, (V) 'c Pc (mA) (W) ^FE Test condition V_ condition vΠ(V) <c (mA) (sat) Cob 'C (mA) (mA) (pF) *T (MHz) Others 200 - (V) 2SA1337

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5