2SD1256 TRANSISTOR Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 10.0±0.3 1.5±0.1 1.5+0 –0.4

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

Contextual Info: Transistors SMD Type Product specification 2SD1256 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Large collector current IC.

2SD1256

Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1256 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Large collector current IC.

2SB0933

Abstract: 2SB933 2SD1256
Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 10 A Collector current IC 5 A Ta=25°C

Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 Parameter 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . • Absolute Maximum Ratings TC = 25°C

Contextual Info: P ow er Tra n sisto rs 2SD125Ó 2SD1256 Silicon NPN Epitaxial Planar Type P a ck age Dim ensions P o w e r Switching Co m p le m e n ta ry Pair with 2SB933 U n it ! i 8 .7 m a x • Fe atures 6.5 max • Low c o lle c to r-e m itte r satu ratio n v o lta g e V ll (Sat

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

TO111

Abstract: 2SD189 to-53 2SC647 2SD772B
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT •CBO Max ON) Min (Hz) (A) r Max (s) Max (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or Mor , (Cont'd) . . . .5 -10 2SD772 2SD772A

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and