2SC5692 Search Results

2SC5692

Abstract: 23S1C
Contextual Info: 2SC5692 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5692 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.3 A 直流電流増幅率が高い。

Contextual Info: 2SC5692 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5692 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.3 A 直流電流増幅率が高い。

Contextual Info: Reliability Tests Report Product Name: 2SC5692 Package Name: TSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

2SC5692

Contextual Info: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

Contextual Info: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

Contextual Info: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

2SC5692

Contextual Info: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

2sc5692

Contextual Info: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

2SC5692

Contextual Info: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

Contextual Info: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

Contextual Info: 2SC5692 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

Contextual Info: 2SC5692 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Industrial Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

circuit diagram of luminous inverter

Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
Contextual Info: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

tb6584

Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
Contextual Info: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

TPC6801

Abstract: WJ 5252 F Battery chargers for portable dvd china SOT89 PNP marking GA MARKING WB SOT-89 2SC5703 TOSHIBA BIPOLAR POWER TRANSISTOR 2SA2056 2SA2058 2SC5738
Contextual Info: New Product Guide Low-Saturation-Voltage Power Transistors in small surface-mount packages PRODUCT GUIDE Low-Saturation-Voltage Power Transistors Overview Features These newly developed low-saturation-voltage transistors are based on the low-withstanding voltage Hi-Met III (3rd-generation high-efficiency mesh

64Mb-SRAM

Abstract: TC51W6416XB-80 transistor SOT23 4d transistor wd sot-23 MT4S100U MT4S101U TC51W6417XB-80 NPN SOT-23 WF S2117 TC7SA126F
Contextual Info: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2001年10月号 1 各種携帯情報端末の小型・薄型化を実現 8Mb SRAM/32Mb擬似SRAM搭載MCP TH50WSP3580AASBTH50WSP3581AASB SRAM応用技術担当 045-890-2708 携帯電話をはじめとする携帯機器、情報

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4