2SC266 Search Results

2SC2665

Abstract: 2sa1135 2SC2665 2sa1135
Contextual Info: JMnic Product Specification 2SA1135 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SC2665 APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter

2sa1133

Abstract: HIGH VOLTAGE POWER 2SA1133 PNP TRANSISTORS 2SA1133A 2SA113
Contextual Info: JMnic Product Specification 2SA1133 2SA1133A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High breakdown voltage ・High power dissipation ・Complement to type 2SC2660/2660A APPLICATIONS ・For power amplifier and TV vertical deflection output applications

2SC2665

Abstract: 2SA1135
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1135 Silicon PNP P o w er Transistors DESCRIPTION • W ith TO-3PN package • Complement to type 2SC2665 APPLICATIONS • For general purpose applications PINNING PIN DESCRIPTION 1 Base o Collector:conr>ected to

2SA1133

Abstract: 2SC2660 2SA1133A
Contextual Info: Inchange Semiconductor Product Specification 2SA1133 2SA1133A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High breakdown voltage ·High power dissipation ·Complement to type 2SC2660/2660A APPLICATIONS ·For power amplifier and TV vertical

2sa1133

Abstract: 2SA1133A
Contextual Info: SavantIC Semiconductor Product Specification 2SA1133 2SA1133A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High breakdown voltage ·High power dissipation ·Complement to type 2SC2660/2660A APPLICATIONS ·For power amplifier and TV vertical

2sa1133

Abstract: 2SC2660 TV power transistor datasheet
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1133 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V (Min) ·Large Collector Power Dissipation ·Complement to Type 2SC2660 APPLICATIONS ·Designed for power amplifier and TV vertical deflection

TV power transistor datasheet

Abstract: 2SA1133A 2SC2660A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1133A DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -180V (Min) ·Large Collector Power Dissipation ·Complement to Type 2SC2660A APPLICATIONS ·Designed for power amplifier and TV vertical deflection

2SC2668

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2668 TO-92S TRANSISTOR NPN 1. EMITTER FEATURES z Small reverse transfer capacitance z Low Noise Figure 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

bfw34 diode

Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2SC2668

Abstract: transistor 2sc2668
Contextual Info: ST 2SC2668 NPN Silicon Epitaxial Planar Transistor High frequency amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

Contextual Info: 2SC2667 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)17 V(BR)CBO (V)35 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)45 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.

2SC2668-Y

Abstract: 2SC2668
Contextual Info: TOSHIBA 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • Sm all Reverse Transfer Capacitance • Low Noise Figure : U nit in mm Cre = 0.70pF (Typ.)

2SC2660

Abstract: 2sa1133 2SC2660A TO-220 2SC266
Contextual Info: SavantIC Semiconductor Product Specification 2SC2660 2SC2660A Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1133/1133A ·High VCEO ·Large PC APPLICATIONS ·Power amplifier applications ·TV vertical deflection applications

2SD1165A

Abstract: D 1163 A 2SD1084 D1138 2sc2373 2Sd1165 2sD1307 2SD1961 2SD1265 1170 T
Contextual Info: - 232 - m € Type No. € tt Maniif. =M H SANYO nt s TOSHIBA a b NEC 31 HITACHI m ± il FUJITSU ft T MATSUSHITA jr. H MITSUBISHI □ — A ROHM 2 S D 1135 <- s a 2 S D 1136 * s a 2 S D 1137 ✓ s a 2SD743A 2SD857 2SD1896 s a 2SC2336A 2SC2660 2SD1562A 2 S D 1138 ,

2SC2669

Abstract: wf-5 transistor
Contextual Info: TO SHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. 4.2MAX. ivi A X i ivi UM RAT iN G $ (Ta = 25°C)

2SC2660

Abstract: 2SA113 2sa1133 2SC2660A
Contextual Info: Inchange Semiconductor Product Specification 2SC2660 2SC2660A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1133/1133A ・High VCEO ・Large PC APPLICATIONS ・Power amplifier applications ・TV vertical deflection applications

2SC2668

Contextual Info: ST 2SC2668 NPN Silicon Epitaxial Planar Transistor High frequency amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sc2668

Abstract: NF550
Contextual Info: 2SC2668 TO-92S Transistor NPN TO-92S 1. EMITTER 2. COLLECTOR 123 3. BASE Features — Small reverse transfer capacitance Low Noise Figure — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO

2SC2668

Contextual Info: ST 2SC2668 NPN Silicon Epitaxial Planar Transistor High frequency amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2665

Abstract: 2SA1135
Contextual Info: SavantIC Semiconductor Product Specification 2SA1135 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SC2665 APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2668 TO-92S TRANSISTOR NPN 1. EMITTER FEATURES z Small reverse transfer capacitance z Low Noise Figure 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

EU100

Abstract: 2SC2668-Y 2SC2668 QE RB 29
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SC2668 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS 4 .2 M A X . • • Small Reverse Transfer Capacitance : Cre = 0.70 pF (Typ.)