2SC2640 Search Results

2SC2640

Abstract: pj 71
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=28W Min, ( f=175MHz, VCC=12.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=14.5V, Pj=4W, f=175MHz

2SC2640

Abstract: 12ID GP 84
Contextual Info: TOSHIBA 2SC2640 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 28W Min. (f = 175MHz, V ee = 12.5V, Pi = 4W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT

Contextual Info: TOSHIBA 2SC2640 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 64 0 VHF BAND POWER AMPLIFIER APPLICATIONS U n i t in m m Output Power : Po = 28W Min. (f= 175MHz, V c c = 12.5V, Pi = 4W) M A X IM U M RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

Contextual Info: TOSHIBA 2SC2640 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r i a û \ Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. • Output Power : Po = 28W (Min. (f= 175MHz, V ce = 12.5V, Pi = 4W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage

2SA1138

Abstract: 2SC2673 2sc2681 2SA1020 200W vhf 2SC2676 2SC2644 2SC2637 2SC2638 2SC2640
Contextual Info: - 130 - X Ta=25Tlt *EP(àTc=25tï 32 2SC2636 2SC2637 & ft £ m m 2SC2638 2SC2639 2SC2640 2SC2641 ïRS scs 2SC2643 2SC2647 2SC2652 M3Í m VCBO VcEO ic(DC) Pc Pc* ICBO lf (V) (V) (A) m m (iiA) (V) vntäx) 30 20 0.05 300 300 0.1 15 35 17 2 15 VHF PA 35 17 3.5

nec 2501

Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC1555 nec 2508 2SC3660 2SC2534
Contextual Info: - m € Type No. tt « Manuf. 2SC 2473 B 2SC 2474 B 2SC 2475 B 2SC 2476 a m h SANYO 3S S TOSHIBA 2SC2753 ¡L m m h NEC B u HITACHI 2SC2Q26 * ± a FU JIT S U fâ T MATSUSHITA B te T 2SC4269 2SC3121 2SC2755 2SC4229 2SC 2451 - M 2 2SC3902 2SC362Í 2SC269ÛA

2SC2879

Abstract: 150PEP
Contextual Info: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

S1854

Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

tbf819

Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
Contextual Info: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

3182N

Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
Contextual Info: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

TT 2206

Abstract: tt 2194 TT 2188 2SC3008-KA TT 2206 sanyo 2sc2103a TT 2190 2SC2106 2SC2196 sl 2172
Contextual Info: - 132 - tt m % Type No. 2SC 2172 2SC 2173 2SC 2176 2SC 2177 2SC 2178 X 2SC 2180 2SC 2181 2SC 2182 2SC 2183 2SC 2186 2SC 2188 / 2SC 2189#' 2SC 2190 2SC 2191 2SC 2192 2SC 2193 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC SANYO M S TOSHIBA m s NEC SL HITACHI a S. S M dr il

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2SC1957

Abstract: 2SC2407 2SC2101 2SC1943 2SC1914A 2SC1971 2sc2098 2SC2229 2SC2329 2SC3800
Contextual Info: - m « Type No. tt 2SC 1935 Ìd r ìl 2SC 1936 m ir i! 2SC 1937 ̱ il 2 SC 1938 «± a 2SC 1939 • ± il 2SC 1940 < •- a a 2SC 194 ^ b a a sl 2SC 1942 % Manuf. — 2SC 1943 SANYO M £ TOSHIBA H * tSO 1945,. 3 « 2SC2909 tenonin ù O K /ùJIV Jx 2SC1658

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or