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    2SC226 Search Results

    2SC226 Datasheets (77)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC226
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 66.22KB 1
    2SC226
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.77KB 1
    2SC226
    Unknown Japanese Transistor Cross References (2S) Scan PDF 34.86KB 1
    2SC226
    Unknown Cross Reference Datasheet Scan PDF 38.41KB 1
    2SC226
    Unknown The Japanese Transistor Manual 1981 Scan PDF 104.88KB 2
    2SC226
    Unknown Transistor Substitution Data Book 1993 Scan PDF 28.94KB 1
    2SC226
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.26KB 1
    2SC226
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 103.26KB 1
    2SC226
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 36.57KB 1
    2SC2260
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 43.76KB 1
    2SC2260
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 74.76KB 1
    2SC2260
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 165.99KB 1
    2SC2260
    Unknown Japanese Transistor Cross References (2S) Scan PDF 40.04KB 1
    2SC2260
    Unknown Cross Reference Datasheet Scan PDF 39.26KB 1
    2SC2260
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.72KB 1
    2SC2260
    Unknown Transistor Substitution Data Book 1993 Scan PDF 36.36KB 1
    2SC2260
    Unknown The Japanese Transistor Manual 1981 Scan PDF 113.97KB 2
    2SC2260
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 45.23KB 1
    2SC2260
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 86.78KB 1
    2SC2261
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 43.76KB 1

    2SC226 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA981

    Abstract: 2SA980 2SA982 2SA980/981/982
    Contextual Info: Inchange Semiconductor Product Specification 2SA980/981/982 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC2260/2261/2262 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION


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    2SA980/981/982 2SC2260/2261/2262 2SA980 2SA981 2SA982 -100V; 2SA981 2SA980 2SA982 2SA980/981/982 PDF

    2SA973

    Abstract: 2SC2263 2SC2295 2SA1022 t31i
    Contextual Info: PANASONIC INDL/ELEKiSEMI> 7SC D | 1^32054 □ OG'Usq 7 f~ T Ji -f 7 2SC2263 2SC2263 NPN jc fcf £ '> tj U > $•'> 7 \/~f l — NP N Epitaxial Planar Low Noise Amplifier ' J / Complementary Pair with 2SA973 2SA973£:a >71) ^ /F e a tu re s it eP IC E E N V ¿ ^


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    2SC2263 2SC2263 2SA973t3 2SA973 2SA973 2SC2295 2SA1022 t31i PDF

    2sc2260

    Abstract: 2SA980
    Contextual Info: SavantIC Semiconductor Product Specification 2SC2260 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA980 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter


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    2SC2260 2SA980 2sc2260 2SA980 PDF

    2sc2262

    Abstract: 2SA982
    Contextual Info: SavantIC Semiconductor Product Specification 2SC2262 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA982 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter


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    2SC2262 2SA982 2sc2262 2SA982 PDF

    2SC2260

    Abstract: 2SA980 n-p-n power transistor
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2260 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) ·Complement to Type 2SA980 APPLICATIONS ·Designed for general purpose applications.


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    2SC2260 2SA980 2SC2260 2SA980 n-p-n power transistor PDF

    2SC2261

    Abstract: 2SA981
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2261 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min.) ·Complement to Type 2SA981 APPLICATIONS ·Designed for general purpose applications.


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    2SC2261 2SA981 2SC2261 2SA981 PDF

    transistor 2SA980

    Abstract: 2SA980 2SC2260
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA980 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min.) ·Complement to Type 2SC2260 APPLICATIONS ·Designed for general purpose applications.


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    2SA980 -100V 2SC2260 -50mA; -100V; transistor 2SA980 2SA980 2SC2260 PDF

    2SA980

    Abstract: 2SA981 2SA982
    Contextual Info: JMnic Product Specification 2SA980/981/982 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC2260/2261/2262 APPLICATIONS ・For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base


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    2SA980/981/982 2SC2260/2261/2262 2SA980 2SA981 2SA982 -100V; 2SA980 2SA981 2SA982 PDF

    2SC2260

    Abstract: 2SA982 2SA980 2SA981 IC 2262
    Contextual Info: SavantIC Semiconductor Product Specification 2SA980/981/982 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC2260/2261/2262 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION


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    2SA980/981/982 2SC2260/2261/2262 2SA980 2SA981 2SA982 -100V; 2SC2260 2SA982 2SA980 2SA981 IC 2262 PDF

    2SC2262

    Abstract: 2SA982
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2262 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min.) ·Complement to Type 2SA982 APPLICATIONS ·Designed for general purpose applications.


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    2SC2262 2SA982 2SC2262 2SA982 PDF

    2SC2261

    Abstract: 2SA981 085s transistor pnp 120v 80w
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA981 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC2261 APPLICATIONS ·Designed for general purpose applications.


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    2SA981 -120V 2SC2261 -50mA -120V; 2SC2261 2SA981 085s transistor pnp 120v 80w PDF

    2SA982

    Abstract: 2SC2262
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA982 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min.) ·Complement to Type 2SC2262 APPLICATIONS ·Designed for general purpose applications.


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    2SA982 -140V 2SC2262 -50mA -140V; 2SA982 2SC2262 PDF

    2SC2261

    Abstract: 2SA981
    Contextual Info: SavantIC Semiconductor Product Specification 2SC2261 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA981 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter


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    2SC2261 2SA981 2SC2261 2SA981 PDF

    2SC2266

    Contextual Info: SavantIC Semiconductor Product Specification 2SC2266 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·For switching regulator application PINNING See Fig.2 PIN DESCRIPTION 1 Base


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    2SC2266 2SC2266 PDF

    2SA1024

    Abstract: 2sc2267
    Contextual Info: 2SC2267 y > J 3 > NPN H i S i t i _ S IL IC O N NPN T R IP L E D IF F U S E D 2SA 10 2 4 ® £ □ > - f U * > * U HIGH V O L T A G E S W IT C H IN G C o m p le m e n ta ry p a ir w ith 2 S A 1 0 2 4 1. 2 - \ •• / 9 Emi tter 2. — X ! B ase


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    2SA1024Â 2SC2267Â 2SA1024 2sc2267 PDF

    C3182N

    Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
    Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn


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    2SA51 2SA57 2SC3281 2SD1571 C3182N C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    2SC3181

    Abstract: 2SD1526 1286-Z 2SD2239 2SC2060 2Sd1448 2SD400 2SD798 2SD822 2SD1114
    Contextual Info: 236 - a Si £ Type No. « » « fe' T T fci T 2SD 12 7 5A 2SD 1 27 6 2SD 12 7 6A 2SD 1 27 7 2SD 12 7 7A 2SD 1278 2SD 1 28 0 2SD 1 2 81 2SD 1 2 82 2SD 1 2 83 2SD 1284 2SD 128 5 > 2S D 1286 TOSHIBA 1 NEC 31 HITACHI § t FUJITSU I ta t MATSUSHITA = m MITSUBISHI


    OCR Scan
    2SD1765 2SD1589 2SD1933 2SD1590 2SD1604 2SD2025 2SD822 2SD1619 2SC3181 2SD1526 1286-Z 2SD2239 2SC2060 2Sd1448 2SD400 2SD798 2SD822 2SD1114 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF