2SC188 Search Results

2sc1880

Contextual Info: Inchange Semiconductor Product Specification 2SC1880 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·For industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC1880

Contextual Info: SavantIC Semiconductor Product Specification 2SC1880 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·For industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

TM 1628 IC

Abstract: IC TM 1628 Datasheet TM 1628 TM 1628 Datasheet 2SC1881 DSA003644
Contextual Info: 2SC1881 K Silicon NPN Triple Diffused ADE-208-882 (Z) 1st. Edition Sep. 2000 Application High gain amplifier power switching Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6.8 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C)

TM 1628 IC

Abstract: ic tm 1628 IC TM 1628 Datasheet TM 1628 Datasheet 2SC1881 Hitachi DSA00388
Contextual Info: 2SC1881 K Silicon NPN Triple Diffused Application High gain amplifier power switching Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6.8 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SC1885

Abstract: 2SA912 2SC188 ic SE 135 100vie ST176
Contextual Info: 2SA912 2SA912 « ^ /P R E L IM IN A R Y PNP x f - ÿ + ÿ ? ) / 7"U— M li/S i PNP Epitaxial Planar SitftfScJI a1ilte ff l/H ig h Voltage Low-noise Amplifier 2SC1885 U ^ ? U/Complementary Pair with 2SC1885 it/F e a t u r e s • 3 ^ ^ i y 9 HEH V CEO ¿ ‘iS l^ 'o /H ig h V CE0

Contextual Info: HITACHI 2SC1881 K - Silicon NPN Triple Diffused High Gain Amplifier Power Switching Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCB0 60 V Collector to emitter voltage VCE0 60 V Emitter to base voltage V EBO

Contextual Info: 2SC1881 K Silicon NPN Triple Diffused HITACHI Application H igh gain am plifier pow er switching Outline TO -220AB 2 O 1 < O1. Base 2. Collector (Flange) 3. Emitter 6.8 k£2 (Typ) 400 Q. (Typ) Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit

Hitachi DSA00164

Abstract: 2SC1881
Contextual Info: 2SC1881 K Silicon NPN Triple Diffused Application High gain amplifier power switching Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6.8 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

Contextual Info: 2SC1881 K Silicon NPN Triple Diffused HITACHI Application High gain amplifier power switching Outline TO-220AB 3 Absolute Maximum Ratings ( T a = 25°C) Item Symbol Ratings Unit C ollector to base voltage ^C B Q 60 V C ollector to em itter voltage VCEQ 60

Contextual Info: 2SC1881K Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k

2SD588

Abstract: 2SD427 2SD2006 2SD572 2SC3133 2SC732 2SD586A 2sd573 2SD471 2SC1775
Contextual Info: - a € Type No. a € Manuf. h SANYO n JE 2? TOSHIBA 2SD 565 n B9 B U 2SD 568 a m 2SD1Û61 2SD 569 9 2SD1061 2SD 570 ^ fé T 2SD313 2SD526 2SD 571 b m 2SD863 2SC1627 2SD 558 NEC n 2SD686 a 2SD 560 B B HITACHI ÎL 2SC188KK FUJITSU a fé T MATSUSHITA m h MITSUBISHI

2Sc1881

Contextual Info: 2SC1881 K Silicon NPN Triple Diffused HITACHI Application High gain amplifier power switching Outline TO-220AB Ì Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage ^G B O 60 V Collector to em itter voltage VCEo 60 V

2SC1881

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Inchange Semiconductor Product Specification 2SC1881 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·High gain amplifier power switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: 2SC1889 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1881

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SC1881 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·High gain amplifier power switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SC1881

Contextual Info: 2SC1881 K Silicon NPN Triple Diffused High Gain Amplifier Power Switching Absolute Maximum Ratings Ta = 25°C Item TO-220AB Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 60 V ————————————————————–

Hitachi DSA002787

Abstract: 2SC1881K
Contextual Info: 2SC1881 K Silicon NPN Triple Diffused Application High gain amplifier power switching Outline Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC1565

Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207

2SC3558

Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
Contextual Info: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD

2SA899

Abstract: 2SC1903 2SC1792 2sc1855 2-13B1A 2SC1815L 2SA1015L 2SC1840 2SA991 2sc1846
Contextual Info: - no Ta=25‘ C, *EfJíáTc=25‘ C} •WTX -a m -Çt -Él iè m VCBO Vc e o IC(DC Pc Pc* (V) (V) (A) (W) (W) IcBO (max) (a a ) VcB (V) ñ (min) hFE ft & (max) fé Vc e (V) (13=25^) ïc/ OHHàtypfc] (max) (V) I e (A) (V) le (A) Ib (A) 2SC1763 30MHz PA 65

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

KT601

Abstract: 2SC1708 2SC2675 kt601am 2SC2089BL KT601A 2SC3328Y LOW-POWER SILICON NPN SM-150 diode 2SC1627Y
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 >= 20 2S0438 2S0875 2SC3359 2SC3359 2SC1198K 2S01782K A 2S01782K (A) 2SC2061 ~~~~ ~ t~~ ~~g~~~~ 25 30 Rohm Corp Rohm Corp Rohm Co Ltd Indust Mexi NECElecslnc NEC Corp JA Sanken Elec Rohm Co Ltd ~anyo E!ect