2SB936 Search Results

2SB936A

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB936A TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

2SB936

Abstract: 2SB936A
Contextual Info: Power Transistors 2SB936, 2SB936A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 0.8±0.1 0.5max. 2.54±0.3 Absolute Maximum Ratings TC=25˚C 2SB936 –50 –20 VCEO emitter voltage 2SB936A –40 V VEBO –5 V Peak collector current

panasonic 2SB

Contextual Info: Power T ransistors 2SB936, 2SB936B 2SB936, 2SB936A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Unit I mm • Features 8.7 • Low collector-em itter saturation voltage V cec. u 3.7m«x max. 1. Imax, 6.5 max. • High speed switching

Contextual Info: 2SB936Q Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)10 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)600m @I(C) (A) (Test Condition)10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm Unit −40 V 1 −50 −20 Collector-emitter voltage 2SB0936 (Base open)

2SB0936

Abstract: 2SB0936A 2SB936 2SB936A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 3.4±0.3 6.0±0.2 1.0±0.1 Rating Unit VCBO −40 V 1 −50 2SB0936A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB936 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE  DESCRIPTION The UTC 2SB936 is a silicon PNP epitaxial planar type, it uses UTC’s advanced technology to provide the customers with high DC

Contextual Info: Product specification 2SB936 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

2SB0936A

Abstract: 2SB936 2SB936A 2SB0936
Contextual Info: Power Transistors 2SB0936, 2SB0936A 2SB936, 2SB936A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 0.8±0.1 0.5max. 2.54±0.3 Absolute Maximum Ratings (TC=25˚C) 2SB0936 –20 VCEO emitter voltage 2SB0936A V –50 VEBO –5

2SB936

Abstract: 2SB936A
Contextual Info: Power Transistors 2SB936, 2SB936B 2SB936, 2SB936A Silicon P N P Epitaxial Planar Type Package Dimensions Low Voltage Switching Unit : mm • Features Item Symbol 2SB936 cr aT D Collectoremitter voltage 2SB936 2SB936A Value VcHO 2SB936A V ebo IcF 2.54 ±0.3

b0246

Abstract: PH2955T 045H2 SMCP055 SGS-Ates B0246A B0-246 MJE2955T ST MJE2901K MJE2955K
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 SOT3805 SOT3825 SOT3825 SOT3825 SOT3105 SOT3115 SOT3125 ST29051 ~gH~g~ 35 40 SOT3807 SOT3827 SOT3827 SOT3827 2SB871A 2SB936A 2SB948A 2SB896A ~~~~~~~ 45 50 SK3183 BOW22 B0664 B0664 B0246 B0206

Contextual Info: Product specification 2SB936A TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1

2SB936

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB936 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm Unit −40 V 1 −50 −20 Collector-emitter voltage 2SB0936 (Base open)

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *