2SB1015 Y Search Results

2SB1015

Abstract: 2SD1406 2SB1015-O 2sB101
Contextual Info: V U = ¡> P N P = n íÉ ñ M 2SB1015 2SB1015 : mm 10.3MAX. lâfnsrtTi'i&v'o : V C E (sat) = —1.7V (Ic = —3A, Ib = - 0 .3 A ) : P q = 25W (Tc = 25°C) 2SD1406 t 3 > -/ ') ¿ y i' ') hz * 19 t -te (Ta = 25°C) HO •¡n v-vi 3 l'i' sû y ^ - ; | i l ï

2sb1015

Abstract: transistor 2sb1015 2SD1406 transistor 2sd1406
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1406 APPLICATIONS ·Designed for audio frequency power amplifier applications.

2SD1406

Abstract: 2SB1015 25WTc
Contextual Info: Inchange Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25℃ ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power

2SB1015

Abstract: 2SD1406
Contextual Info: JMnic Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier

2SB1015

Abstract: 2SD1406
Contextual Info: SavantIC Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier

2SD1406

Abstract: 2SB1015 RL15A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SB1015 · APPLICATIONS ·For audio frequency power

2SB1015

Abstract: 2sB1015 y 2SD1406
Contextual Info: Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier

2SB1015

Abstract: IC 4025
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 10.3MAX. FEATURES: . Low Collector Saturation Voltage = VcE sat =-1.7V(Max.) at IC=-3A, IB=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406

Contextual Info: TO SH IBA 2SB1015 TOSHIBA TRANSISTOR 2 S SILICON PNP TRIPLE DIFFUSED TYPE B 1 0 1 5 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm 10.3MAX. • Low Collector Saturation Voltage : v CE sat = -1 .7 V (Max.) at IC = - 3 A , IB = -0 .3 A • Collector Power Dissipation : P £ = 25W (Tc = 25°C)

2SD1405

Abstract: 2SA1304 2SA1305 2SA1306 2SA1306A 2SA1306B 2SC3296 2SC3297 2SC3298 2SC3298A
Contextual Info: — 3 O n 8 TO-220 (T S ) P A CK A G E S E R IE S IE M CD l> W H (X) n ✓0 m Application * MAX. A tr 'c Type n o . NPN T V Vertical Out PNP 2SC3298 2SA1306 Audio Drive 2SC3298A 2SA1306A Audio Drive 2SC3298B 2SA1306B General Purpose 2SC3297 2SA1305 2SB1015

2sb1015

Contextual Info: 2SB1015 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATIONS. • • • I í i ü i I a X. Low Collector Saturation Voltage : V cE sat = —1-VV(Max.) at I c = - 3 A , Ib = -0 .3 A Collector Power Dissipation : P q = 25W(T c = 25°C)

sa1306

Abstract: 2SB793 2sb1370 2SA1306 2SB1186B 2SB1085B 2SA1770 2SA1175 2SA1306A 2SB1212
Contextual Info: - m « Type No. 2SB m 8 6 > 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 S8 2SB 2SB 2SB 2 S8 2SB 2SB 2SB 2SB tt □—A □- A 1186A 118 7 / □— A □— A 1188 / □—A 1189 y 119 0 fé T 113 0A *2 T 1191

2SA1115

Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
Contextual Info: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225

2SC3296

Abstract: 2SD1407 2SA1306 2SC3298 2SB1017 2SC3297 2SD1405 2SA1304 2SA1305 2SA1306 2SA1306A
Contextual Info: by TOSHIBA Powered 8 TO-220 ( j D PACKAGE SERIES * MAX. * t r 'c Type No. NPN 2SC3296 2SA1304 ^FE 2SC3298 2SA1306 2SC3298A 2SA1306A Audio Drive 2SC3298B 2SA1306B General Purpose 2SC3297 2SA1305 (A) (V) (W) 150 20 f f TYP. v CE|sat> MA* - SW Time T Y P .

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1406 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High DC Current Gain : hpj;=300 Max. (Vç e =5V, Ic~0.5A) . Low Saturation Voltage : VC E (sat) = 1 •OV(Max.)(IC=3A, IB=0.3A) . High Power Dissipation : Pc=25W (Tc=25°C)

2SB1015

Abstract: 2SD1406
Contextual Info: 2SD1406 SILIC O N NPN TRIPLE DIFFU SED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm laaMAX, FEATURES: . High DC Current Gain : hFE= 300 Max» (Vq e =5V, Ic =0.5A) . Low Saturation Voltage : VCE(sat)=l *OV(Max.) (IC=3A, IB=0.3A) . High Power Dissipation : Pc=25W (Tc=25°C)

2Sj148

Abstract: 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
Contextual Info: Power Amplifier Type No. Ic VcEO Pc fr NPN PNP A (V) (W) (MHz) 2SC2705 2SA1145 0.05 150 0.8 200 5 10m P.D 2SC1627A 2SA817A 0.4 80 0.8 100 10 10m P.D 2SC2235 2SA965 0.8 120 0.9 120 5 0.1 P.D D.O(3W) TYP Vce (V) * Application le (A) 2SC2236 2SA966 1.5 30 0.9

2SD1406

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1406 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm 1Û3M AX. FEATURES: 03.2±CX2 . High DC Current Gain : hFg=300 Max. (V^jj= 5V , 1^=0.5A) & idi « r-^1 +* . Low Saturation Voltage •• VCE(sat)=1.0V(Max.)(Ic=3A,

2SB1099

Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Contextual Info: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w

Contextual Info: TOSHIBA íDI SC RE TE /O PT O} 9097250 TO SH IBA lib C D ISCRETE/OPTO * -3 t>U~üT9~¿Tr ' 2SD1406 DE I TDTTaSO □□□ 7141 S I 3 ^ — 0 «jf U SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm IQ 3MAX, FEATURES:

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *