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    2SA473

    Abstract: 2SA473 equivalent 2sc1173 ic 10w power amplifier 2SA473 O
    Contextual Info: Inchange Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ·Low frequency power amplifier


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    2sa473o-2202sc11732sa473 equivalent+2ic 10w power amplifier2sa473 o PDF

    2SC1173

    Abstract: 2SA473
    Contextual Info: Product Specification www.jmnic.com 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator


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    2sc1173o-2202sa473 PDF

    Contextual Info: JMnic Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator


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    2sc1173o-2202sa473 PDF

    2SA473

    Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA473 POWER AMPLIFIER APPLICATIONS. CAR ''^1? AMD CAR STEREO OUTPUT STAGE APPLICATIONS FEATURES : . Good Linearity of tvpj?. . Complementary to 2SC1173- MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage SYMBOL RATING


    OCR Scan
    2sa4732sc1173--10ma PDF

    2sc1173

    Abstract: 2SA473
    Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.


    OCR Scan
    2sc11732sa473o-220aeic-10ma PDF

    2sc1173

    Abstract: 2sc1173 equivalent 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 ic 10w power amplifier
    Contextual Info: Inchange Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier


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    2sc1173o-2202sa4732sc1173 equivalent+22sc1173 equivalent silicon npn power transistorsic 10w power amplifier PDF

    2sa473

    Abstract: 2SA473 O 2SC1173 2SA473 0
    Contextual Info: SavantIC Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25 APPLICATIONS ·Low frequency power amplifier ·Power regulator


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    2sa473o-2202sc11732sa473 o+12sa473 0 PDF

    2SC1173

    Abstract: 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 2sc1173 equivalent
    Contextual Info: SavantIC Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator


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    2sc1173o-2202sa4732sc1173 equivalent silicon npn power transistors+12sc1173 equivalent PDF

    2SC1173

    Abstract: 2SA473 2sa473 transistor transistor 2sa473 Transistor 2sC1173
    Contextual Info: 2SA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1173 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


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    2sa473o-2202sc11732sa473 transistor+2transistor 2sa473transistor 2sc1173 PDF

    2SA554

    Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
    Contextual Info: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A


    OCR Scan
    sa1192sa429gtm2sa4732sa503+152sa5042sa510-1sa625o-92jf2sa638st0-92jb2sa5542sa5842sa5532sa5642sa5252sa5522sa639s2sc519a2sc520a PDF

    2SA473

    Abstract: 2SC1173 2SA473 O
    Contextual Info: AOK AOK Semiconductor Product Specification 2SA473 S ilicon PNP Power Transistors DESCRIPTION • W ith T 0 2 2 0 package • C om plem ent to type 2SC1173 • C ollector current :IC=-3A • C ollector dissipation:Pc =10W @ Tc=25‘C APPLICATIONS • Low frequency pow er am plifier


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    2sa473t02202sc11732sa473 o PDF

    2s8698

    Abstract: 2SA634A 2sa1015 2sB1064 2SA715 2SA836 2SA970 2SA854 2S8834 2SA1039
    Contextual Info: 10 - s « Type No. *t * 2SA 635 * 2SA 636 * 2SA 636A < s a a a a * 2SA 637 «5 T 2SA 638 B 2SA 638S nr 03 2SA a « * 2 SA 633 * 2SA 634 ^ 2SA 639S £ H Manuf. a a a a a 2SA 640 ^ 0 a * 2SA 641 .✓ * 2SA 642 - * 2 SA 643 - 0 « a a s a * 2SA 644 M TO S H I B A


    OCR Scan
    2sb6322sa7152sa6992sb1064+102sa4732sb6312s86982sa634a2sa10152sa8362sa9702sa8542s88342sa1039 PDF

    2SA934

    Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
    Contextual Info: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54


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    2sb5072sb5962sa9852sb856+122sb9412sb10332sa17822sa10152sa9532sa8362sa9342sa9702sa9332sa9522sb10642sa720 PDF

    2SA934

    Abstract: 2sa933 2sa726 2sa999 2SA1005 2SA1115 2sb849 2SA999L 2SA715 2SB1314
    Contextual Info: - 12 - s « Type No. tt S a 2 SA 7 1 2 2 SA 7 1 3 r0 < 2 SA 7 1 5 2 SA 7 1 7 B h •>- s 2S A 719 , , fé 2 SA 7 2 0 , fé 2S A 7 2 0 A ♦2 2 SA 7 2 1 _ fé 2S A 7 2 2 — fé 2 SA 7 2 3 2S A 7 2 4 2 SA 72 5 2S A 728 - 2 SA 7 2 8 2SA 730 y ' 2SA 731 2SA 732 ✓


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    2sa17682sa8302sb8492sb946+142sb11422sa4732sb7722sa6992sb13142sb10092sa9342sa9332sa7262sa9992sa10052sa11152sa999l2sa715 PDF

    2SC789

    Abstract: 2sc1060 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671
    Contextual Info: TYPE NO. P O L A R IT Y Pow er Transistors CASE M A X IM U M r a t in g s 'c pd IW A) V CEO (V) V C E (S A T ) h fe min max 'c (A) VCE (V) max 'c (V) (A) fT min COM PLE­ (M Hz) TYPE 2SC789 2SC790 2SC1060 2SC1061 2 S C 1 17 3 2SC1626 N N N N N N T O -22 0


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    2sc789o-2202sa4892sc790+82sa4902sc10602sa6702sc10612503142sd3312sa4732sa671 PDF

    2sb526

    Abstract: 2sc1060 2SC789 2SD359 2SA816 2SB529 2SD331 2SD365 2SB513A 2SB514
    Contextual Info: Power Transistors TYPE POLA­ NO. RITY P Pd IC VCEO mW (A) (V) 25 20 3 2 20 10 10 min max 80 50 30 40 2 2 0.8 50 20 80 40 55 55 160 320 320 300 300 10 40* 30 25 25 2 2 20 60 60 40 50 55 60 40 40 35 300 200 240 240 320 35 40 70 40 40 320 400 240 240 2SB 513A


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    2sb513a2sb5142sb5152sb523+102sb5262sb5292sb566a2sc7892sc7902sc10602sd3592sa8162sd3312sd365 PDF

    2n6125

    Contextual Info: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E ­ IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100


    OCR Scan
    mh8100mh8106mh8108mh8700+4mh0810mh0816mh08182n6125 PDF

    2sa1015

    Abstract: 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SA1090 2SB596 2SA673
    Contextual Info: m Type * € tt € No. Manuf. SANYO 2SA 580 * ± « 2SA984 * 2SA 581 « ± a 2SA1450 * 2SA 594 — s s * * 2SA 597 s s 3K TOSHIBA m B NEC B ÍI HITACHI 2SA673 fâ T MATSUSHITA 2SA1096 2SA1283 — A ROHM 2SA935 2SA935 2SA933 2SA748 2SB1043 2SA1399 2SA 603


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    2sa9842sa6732sa10962sa1283+112sa9352sa14502sa10152sa9332sa7332sa6202sa4292sb558nec b 6162sa10902sb596 PDF

    2SB512P

    Abstract: tip318 TIP31N TIP308 MH0870 TIP298 2sb435 2sc1060 MH8106 MH8500
    Contextual Info: TYPE NO. P O L A R ITY Power Transistors M A X IM U M R A TIN G S Pd 'c W A) V C E(SA T) h fe V CEO (V) 'c min max (A) V CE (V) 1 0.5 0.2 0.2 1 1 max 'c fT min (V) (A) 2 2 2 2 2 2 0.8 0.8 0.5 0.5 1.2 0.8 2 2 0.5 0.5 3 2 5 30 50 50 5 5 (MHz) COMPLE­ M ENTARY


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    mh0870o-220mh8700mh8100+13o-22cmh0810mh8106mh0816h81082sb512ptip318tip31ntip308tip2982sb4352sc1060mh8500 PDF

    2sa467

    Abstract: 2SA431 2SA416 2SA422 2SA476 2SA468 2SA440 2SA401 2SA458 2SA417
    Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob ºñ°í (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 2SA401 -30 -0.5 -40 130 85 30 3 2SA402 -35 -100 250 175 200 -6


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    2sa4012sa4022sa4032sa404+152sa4052sa4062sa4072sa4082sa4092sa4102sa4672sa4312sa4162sa4222sa4762sa4682sa4402sa4582sa417 PDF

    2sd331

    Abstract: 2sc1061
    Contextual Info: Power Transistors TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS P* VcEO Ic W (A) (V) Hre min max Ic (A) VCE (V) VcE(«ag max (V) Ic (A) fT COMPLE­ min MENTARY (MHz) TYPE . 2SD366 2SD366A 2SD330 2SD331 2SB513 2SB513A 2SB514 2SB515 2SB523 P P P P P TO-220 TO-220


    OCR Scan
    2sb5132sb513a2sb5142sb515+82sb5232sb5262sb5292sb566ak2sc7892sc7902sd3312sc1061 PDF

    2SC1173

    Abstract: Transistor 2sC1173 2SC 1173 2SC1173-0 IC0003 2SA473 AC75 Produced by Perfect Crystal Device Technology 2SC1173-Y
    Contextual Info: ^ 2 s c 1173 i/U D > N P N X ^ á F 2 /? ;U h ^ > 5 ;^ P C T S a : ^ I L IC O N NPN EPITAXIAL o « * « « « o P o w e r Ampl i f i e r A p p l i cations o Output Stage Application of Car Radio and Stereo TRANSISTOR 2 B A 4 73 <n =. V -7 V ^ y 9 V X-


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    2sc11732sa473t0-220ab10aia+11ftac750/25j100x100x2ml50xs0x2mmtransistor 2sc11732sc 11732sc1173-0ic0003ac75produced by perfect crystal device technology2sc1173-y PDF

    2SA473

    Abstract: LEA-5A 2sa473-0 transistor 2sa473 2SA amplifier lineal 2SC1173 Produced by Perfect Crystal Device Technology transistor 2SA
    Contextual Info: 473 2SA * zj'j3ypNPT£9*ì;j>}bB^= ?yvz5> pcTm ^SILIC ON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) mm o * O ii- 7 * o o Power A m p l if i e r A p p l i c a t i o n s O u tp u t S t a g e A p p l i c a t i o n o f C ar R a d io an d C ar S t e r e o Z SC 1173


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    2sa473zsc11732sc117300mm3n+8100x100x2lea-5a2sa473-0transistor 2sa4732sa amplifierlinealproduced by perfect crystal device technologytransistor 2sa PDF

    2SC1124

    Abstract: 2SC1177 2SC1137 2SC1145 2SC1116A 2SC1130 2sc1127 2SC1147 2sc1186 2SC1111
    Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1101 1100 5 1A 50W(Tc=25ºC) 150 60 15 500 2SC1102 300 7 100 11W(Tc=25ºC) 150


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    2sc11012sc11022sc11032sc1103a+162sc11042sc11052sc11062sc11072sc11082sc11092sc11242sc11772sc11372sc11452sc1116a2sc11302sc11272sc11472sc11862sc1111 PDF