2SA473
Abstract: 2SA473 equivalent 2sc1173 ic 10w power amplifier 2SA473 O
Contextual Info: Inchange Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ·Low frequency power amplifier
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2sa473o-2202sc11732sa473 equivalent+2ic 10w power amplifier2sa473 o
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2SC1173
Abstract: 2SA473
Contextual Info: Product Specification www.jmnic.com 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator
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2sc1173o-2202sa473 |
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Contextual Info: JMnic Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator
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2sc1173o-2202sa473 |
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2SA473
Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA473 POWER AMPLIFIER APPLICATIONS. CAR ''^1? AMD CAR STEREO OUTPUT STAGE APPLICATIONS FEATURES : . Good Linearity of tvpj?. . Complementary to 2SC1173- MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage SYMBOL RATING
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2sa4732sc1173--10ma |
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2sc1173
Abstract: 2SA473
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.
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2sc11732sa473o-220aeic-10ma |
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2sc1173
Abstract: 2sc1173 equivalent 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 ic 10w power amplifier
Contextual Info: Inchange Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier
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2sc1173o-2202sa4732sc1173 equivalent+22sc1173 equivalent silicon npn power transistorsic 10w power amplifier
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2sa473
Abstract: 2SA473 O 2SC1173 2SA473 0
Contextual Info: SavantIC Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25 APPLICATIONS ·Low frequency power amplifier ·Power regulator
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2sa473o-2202sc11732sa473 o+12sa473 0
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2SC1173
Abstract: 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 2sc1173 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator
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2sc1173o-2202sa4732sc1173 equivalent silicon npn power transistors+12sc1173 equivalent
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2SC1173
Abstract: 2SA473 2sa473 transistor transistor 2sa473 Transistor 2sC1173
Contextual Info: 2SA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1173 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)
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2sa473o-2202sc11732sa473 transistor+2transistor 2sa473transistor 2sc1173
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2SA554
Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
Contextual Info: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A
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sa1192sa429gtm2sa4732sa503+152sa5042sa510-1sa625o-92jf2sa638st0-92jb2sa5542sa5842sa5532sa5642sa5252sa5522sa639s2sc519a2sc520a
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2SA473
Abstract: 2SC1173 2SA473 O
Contextual Info: AOK AOK Semiconductor Product Specification 2SA473 S ilicon PNP Power Transistors DESCRIPTION • W ith T 0 2 2 0 package • C om plem ent to type 2SC1173 • C ollector current :IC=-3A • C ollector dissipation:Pc =10W @ Tc=25‘C APPLICATIONS • Low frequency pow er am plifier
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2sa473t02202sc11732sa473 o |
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2s8698
Abstract: 2SA634A 2sa1015 2sB1064 2SA715 2SA836 2SA970 2SA854 2S8834 2SA1039
Contextual Info: 10 - s « Type No. *t * 2SA 635 * 2SA 636 * 2SA 636A < s a a a a * 2SA 637 «5 T 2SA 638 B 2SA 638S nr 03 2SA a « * 2 SA 633 * 2SA 634 ^ 2SA 639S £ H Manuf. a a a a a 2SA 640 ^ 0 a * 2SA 641 .✓ * 2SA 642 - * 2 SA 643 - 0 « a a s a * 2SA 644 M TO S H I B A
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2sb6322sa7152sa6992sb1064+102sa4732sb6312s86982sa634a2sa10152sa8362sa9702sa8542s88342sa1039
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2SA934
Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
Contextual Info: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54
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2sb5072sb5962sa9852sb856+122sb9412sb10332sa17822sa10152sa9532sa8362sa9342sa9702sa9332sa9522sb10642sa720
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2SA934
Abstract: 2sa933 2sa726 2sa999 2SA1005 2SA1115 2sb849 2SA999L 2SA715 2SB1314
Contextual Info: - 12 - s « Type No. tt S a 2 SA 7 1 2 2 SA 7 1 3 r0 < 2 SA 7 1 5 2 SA 7 1 7 B h •>- s 2S A 719 , , fé 2 SA 7 2 0 , fé 2S A 7 2 0 A ♦2 2 SA 7 2 1 _ fé 2S A 7 2 2 — fé 2 SA 7 2 3 2S A 7 2 4 2 SA 72 5 2S A 728 - 2 SA 7 2 8 2SA 730 y ' 2SA 731 2SA 732 ✓
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2sa17682sa8302sb8492sb946+142sb11422sa4732sb7722sa6992sb13142sb10092sa9342sa9332sa7262sa9992sa10052sa11152sa999l2sa715
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2SC789
Abstract: 2sc1060 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671
Contextual Info: TYPE NO. P O L A R IT Y Pow er Transistors CASE M A X IM U M r a t in g s 'c pd IW A) V CEO (V) V C E (S A T ) h fe min max 'c (A) VCE (V) max 'c (V) (A) fT min COM PLE (M Hz) TYPE 2SC789 2SC790 2SC1060 2SC1061 2 S C 1 17 3 2SC1626 N N N N N N T O -22 0
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2sc789o-2202sa4892sc790+82sa4902sc10602sa6702sc10612503142sd3312sa4732sa671
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2sb526
Abstract: 2sc1060 2SC789 2SD359 2SA816 2SB529 2SD331 2SD365 2SB513A 2SB514
Contextual Info: Power Transistors TYPE POLA NO. RITY P Pd IC VCEO mW (A) (V) 25 20 3 2 20 10 10 min max 80 50 30 40 2 2 0.8 50 20 80 40 55 55 160 320 320 300 300 10 40* 30 25 25 2 2 20 60 60 40 50 55 60 40 40 35 300 200 240 240 320 35 40 70 40 40 320 400 240 240 2SB 513A
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2sb513a2sb5142sb5152sb523+102sb5262sb5292sb566a2sc7892sc7902sc10602sd3592sa8162sd3312sd365
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2n6125
Contextual Info: Power Transistors TYPE POLA NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100
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mh8100mh8106mh8108mh8700+4mh0810mh0816mh08182n6125
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2sa1015
Abstract: 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SA1090 2SB596 2SA673
Contextual Info: m Type * € tt € No. Manuf. SANYO 2SA 580 * ± « 2SA984 * 2SA 581 « ± a 2SA1450 * 2SA 594 — s s * * 2SA 597 s s 3K TOSHIBA m B NEC B ÍI HITACHI 2SA673 fâ T MATSUSHITA 2SA1096 2SA1283 — A ROHM 2SA935 2SA935 2SA933 2SA748 2SB1043 2SA1399 2SA 603
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2sa9842sa6732sa10962sa1283+112sa9352sa14502sa10152sa9332sa7332sa6202sa4292sb558nec b 6162sa10902sb596
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2SB512P
Abstract: tip318 TIP31N TIP308 MH0870 TIP298 2sb435 2sc1060 MH8106 MH8500
Contextual Info: TYPE NO. P O L A R ITY Power Transistors M A X IM U M R A TIN G S Pd 'c W A) V C E(SA T) h fe V CEO (V) 'c min max (A) V CE (V) 1 0.5 0.2 0.2 1 1 max 'c fT min (V) (A) 2 2 2 2 2 2 0.8 0.8 0.5 0.5 1.2 0.8 2 2 0.5 0.5 3 2 5 30 50 50 5 5 (MHz) COMPLE M ENTARY
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mh0870o-220mh8700mh8100+13o-22cmh0810mh8106mh0816h81082sb512ptip318tip31ntip308tip2982sb4352sc1060mh8500
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2sa467
Abstract: 2SA431 2SA416 2SA422 2SA476 2SA468 2SA440 2SA401 2SA458 2SA417
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob ºñ°í (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 2SA401 -30 -0.5 -40 130 85 30 3 2SA402 -35 -100 250 175 200 -6
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2sa4012sa4022sa4032sa404+152sa4052sa4062sa4072sa4082sa4092sa4102sa4672sa4312sa4162sa4222sa4762sa4682sa4402sa4582sa417
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2sd331
Abstract: 2sc1061
Contextual Info: Power Transistors TYPE POLA CASE NO. RITY MAXIMUM RATINGS P* VcEO Ic W (A) (V) Hre min max Ic (A) VCE (V) VcE(«ag max (V) Ic (A) fT COMPLE min MENTARY (MHz) TYPE . 2SD366 2SD366A 2SD330 2SD331 2SB513 2SB513A 2SB514 2SB515 2SB523 P P P P P TO-220 TO-220
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2sb5132sb513a2sb5142sb515+82sb5232sb5262sb5292sb566ak2sc7892sc7902sd3312sc1061
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2SC1173
Abstract: Transistor 2sC1173 2SC 1173 2SC1173-0 IC0003 2SA473 AC75 Produced by Perfect Crystal Device Technology 2SC1173-Y
Contextual Info: ^ 2 s c 1173 i/U D > N P N X ^ á F 2 /? ;U h ^ > 5 ;^ P C T S a : ^ I L IC O N NPN EPITAXIAL o « * « « « o P o w e r Ampl i f i e r A p p l i cations o Output Stage Application of Car Radio and Stereo TRANSISTOR 2 B A 4 73 <n =. V -7 V ^ y 9 V X-
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2sc11732sa473t0-220ab10aia+11ftac750/25j100x100x2ml50xs0x2mmtransistor 2sc11732sc 11732sc1173-0ic0003ac75produced by perfect crystal device technology2sc1173-y
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2SA473
Abstract: LEA-5A 2sa473-0 transistor 2sa473 2SA amplifier lineal 2SC1173 Produced by Perfect Crystal Device Technology transistor 2SA
Contextual Info: 473 2SA * zj'j3ypNPT£9*ì;j>}bB^= ?yvz5> pcTm ^SILIC ON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) mm o * O ii- 7 * o o Power A m p l if i e r A p p l i c a t i o n s O u tp u t S t a g e A p p l i c a t i o n o f C ar R a d io an d C ar S t e r e o Z SC 1173
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2sa473zsc11732sc117300mm3n+8100x100x2lea-5a2sa473-0transistor 2sa4732sa amplifierlinealproduced by perfect crystal device technologytransistor 2sa
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2SC1124
Abstract: 2SC1177 2SC1137 2SC1145 2SC1116A 2SC1130 2sc1127 2SC1147 2sc1186 2SC1111
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1101 1100 5 1A 50W(Tc=25ºC) 150 60 15 500 2SC1102 300 7 100 11W(Tc=25ºC) 150
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2sc11012sc11022sc11032sc1103a+162sc11042sc11052sc11062sc11072sc11082sc11092sc11242sc11772sc11372sc11452sc1116a2sc11302sc11272sc11472sc11862sc1111
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