2SA420 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4208, 2SC4208A Silicon NPN epitaxial planar type Unit: mm 5.0±0.2 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) 2SC4208 Symbol Rating Unit

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4208, 2SC4208A Silicon NPN epitaxial planar type Unit: mm 5.0±0.2 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) 2SC4208 Symbol Rating Unit

2SA42

Abstract: 2SA1619 2SA1619A 2SC4208 2SC4208A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4208, 2SC4208A Silicon NPN epitaxial planar type Unit: mm 5.0±0.2 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C 2SC4208 Collector-base voltage (Emitter open) 2SC4208A Collector-emitter voltage 2SC4208

2SC4208A

Abstract: 2SA1619 2SA1619A 2SC4208
Contextual Info: Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A Unit: mm 5.0±0.2 4.0±0.2 ● • Absolute Maximum Ratings Parameter Collector to Ta=25˚C

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

transistor 2SA92

Abstract: 2SA226 2N2222B MM1758 transistor OC603 OC42 2sa518 transistor 2SA224 2SA422 AF102
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4208, 2SC4208A Silicon NPN epitaxial planar type Unit: mm 5.0±0.2 0.7±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

2SA1619

Abstract: 2SA1619A 2SC4208 2SC4208A
Contextual Info: Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Parameter Ta=25˚C Symbol Collector to

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2SA1619

Abstract: 2SA1619A 2SC4208 2SC4208A transistor HFE 400 1w
Contextual Info: Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Parameter Ta=25˚C Symbol Collector to

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

asz21

Abstract: AF117 AF114 OC170 Low-Power Germanium PNP GT346B 2G381 2SA239 2n2398 s100
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 • 15 20 25 · 30 35 40 45 50 55 60 2N1158 2N615 2N2966 2N1158A 2SA239 2SA239 2N3399 2SA434 2SA435 2N1744 2N1747 2N1745 2N1868 2N1743 2N1742 2N1746 2N38 2N680 GT758 TR758A TR758A TR758A 2N578 2N1343 ASY50

2SA420

Abstract: 2SC4208 2SC4208A 2SA1619 2SA1619A 2SA42
Contextual Info: Transistors 2SC4208, 2SC4208A Silicon NPN epitaxial planar type Unit: mm 5.0±0.2 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage Emitter open 2SC4208 Symbol Rating Unit VCBO 30 V 2SC4208A 0.45+0.15 –0.1 0.45+0.2 –0.1 (1.27) (1.27)

2sa467

Abstract: 2SA431 2SA416 2SA422 2SA476 2SA468 2SA440 2SA401 2SA458 2SA417
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob ºñ°í (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 2SA401 -30 -0.5 -40 130 85 30 3 2SA402 -35 -100 250 175 200 -6

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment