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    2N708 TRANSISTOR Search Results

    2N708 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    2N708 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n708

    Abstract: 2n708 transistor transistor 2n708
    Contextual Info: 2N708 HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N708 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for very fast switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO


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    2n7082n708 transistortransistor 2n708 PDF

    2N708

    Abstract: 2N708 JANTX
    Contextual Info: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/312 Devices Qualified Level 2N708 JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Total Power Dissipation


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    mil-prf-19500/3122n708o-206aa-ib21+12n708 jantx PDF

    2N708

    Contextual Info: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/312 Devices Qualified Level 2N708 JAN, JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Total Power Dissipation


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    mil-prf-19500/3122n708o-206aa-ib21 PDF

    2N708

    Abstract: Transistor 2N708 J 2N708
    Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTOR 2N708 TO-18 Metal Can Package Switching Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 15 UNIT


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    iso/ts169492n708c-1202n708rev020902+2transistor 2n708j 2n708 PDF

    Contextual Info: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 312 Devices Qualified Level 2N708 JAN, JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Total Power Dissipation


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    mil-prf-19500/2n708o-206aa-ib21 PDF

    2n708

    Abstract: 2N708 JANTX
    Contextual Info: TECHNICAL DATA 2N708 JANTX Processed per MIL-PRF-19500/312C MIL-PRF QPL NPN SWITCHING SILICON TRANSISTORS DEVICES MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO Collector-Emitter Voltage


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    2n708mil-prf-19500/312co-206aa2n708 jantx PDF

    Contextual Info: tSe.mi-Condiicko'i tPioducti, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 SILICON TRANSISTOR 2N708 MECHANICAL DATA CASE: TERMINAL CONNECTIONS: JEDEC TO-18 Lead 1 Emitter Load 2 Base


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    2n708-i-21 PDF

    Contextual Info: High Speed Metal Can Transistors VCEO Part No. Polarity 2N2369 2N2369A NPN 2N708 2N3467 20070515 PNP sust Min. (V) toff @ Ic ton Max. Max. Ic Bipolar Transistors hFE @ IC VCE(sat) @ IC & IB Max. IC PD fT Package @ Min. IB 25°C (mA) (MHz) (mW) Bulk (ns)


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    2n7082n34672n23692n2369a PDF

    2n915

    Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION 2N703 BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN MAX *ICES *ICEV NPN AMPL/SWITCH 25 25 5.0 - 2N706C NPN SAT SWITCH 40 2N708 NPN SAT SWITCH 2N709A NPN SAT SWITCH 2N717 2N718A VCB (V) hFE


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    2n7032n706c2n7082n709a+72n7172n718a2n9162n929a2n930b2n9472n915 PDF

    2n706 transistor

    Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
    Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l


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    t0206aa2n7062n7082n718+122n718aa2n720a2n930a2n22212n2221aa2n22222n706 transistortransistor 2n7062n2222aa2n2222 jan03150 transistortransistor 2n2222 PDF

    2222 NPN

    Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
    Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905


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    2n7082n7092n753npn50+72222 npn2222a npn2n h 2222a2222a2221anpn 2907a2369a PDF

    2n4276

    Contextual Info: N PN Transistors saturated switches Type No Case Sty •• V CIIO V, M,n V CEO 2N706 TO•18 25 15 2N708 TO·18 40 15 20 12 2N744 TO·18 2N753 TO·18 25 2NB34 TO·18 40 2N2369 TO·18 40 15 2N2369A TO·18 40 15 JAN2N2369A TO·18 40 15 JANTX2N2369A TO·18 40


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    2n7062n7082n7442n753+72nb342n23692n2369ajan2n2369a10ijamps27142n4276 PDF

    Motorola 2n708

    Abstract: Motorola* 2n708 Transistor 2N708
    Contextual Info: MOTOROLA SC -CDIODES/OPTÔ} Ï4 d ËT| \ b3b72S5 □ □ 3 0 1 7 e] 1 I - - 6367255 MOTOROLA SC DIODES/OPTO 34C 38179 FLIP-CHIP (continued) - / 7 MMCF708 (silicon) MMCF2369 NPN SWITCH AND A M P LIFIER TRAN SISTO RS Flip-Chip — N P N silicon Annular transistor family for low-current, highswitching applications similar to the 2N708, and 2N2369.


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    b3b72s5--------------------34cmmcf708mmcf2369+72n7082n2369cf2369cf708motorola 2n708motorola* 2n708transistor 2n708 PDF

    2n3052

    Abstract: 2n706 transistor 2N744 2n708 Transistor 2N708
    Contextual Info: TYPE 2N3052 DUAL N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 7 4 2 3 6 , A U G U S T 1 9 6 3 - R E V I S E D A P R IL Î 9 6 7 DESIGNED FOR MINIATURIZED APPLICATIONS REQUIRING DEVICES SIMILAR TO 2N706, 2N708, 2N744, 2N753, 2N834, 2N914, ETC. •


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    2n30522n7062n7082n744+52n7532n8342n9142n706 transistortransistor 2n708 PDF

    2N 2222 A NPN, TO-18

    Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
    Contextual Info: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A


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    2n7082n7092n7532n 2222 a npn, to-18+62n22222n h 2222a2222a npn706a709a2222 npn PDF

    transistor SD335

    Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
    Contextual Info: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen


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    si-npn-planar-epitaxiesc116si-npn-planar-epitaxiesc117si-npn-planar-epitaxiesc118si-npn-planar-epitaxiesc119+16si-npn-planar-epitaxiesc236si-npn-planar-epitaxiesc237si-npn-planar-epitaxiesc238vorsc239si-pnp-planar-epitaxiesc307si-pnp-planar-epitaxiesc308transistor sd335sf126sf127sf128sd337sd336sf137bf241 transistorsd349sd339 PDF

    BFY52 equivalent

    Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device


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    bfs362n930bs9365baw63+12bs9302bfs36a2n929baw63abfy52 equivalentic marking z7marking c1s2n22222n24752n2938f0252n2369 equivalent PDF

    2n2222 itt

    Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711
    Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51


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    vcbouptol20v750ma800mwbsy51+14bsy54bsy55bsy56bsy87bsy88bsy902n2222 itt2n7082n2388p348a140932n930 price34313d itt2n1711 PDF

    2N2475

    Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type


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    bfs362n930bs9365baw63+10bs9302bfs36a2n929baw63a2n24752n2907 equivalent2n2369 equivalentf025ic marking z72n2369 ferranti PDF

    P348A

    Abstract: BFR37 SGS transistor C740 sgs-ates BFY75 2n2388 19142e C720 2N2219 transistor BFW68
    Contextual Info: S G S -A T E S Semiconductors Transistors -N P N NPN Small Signal Transistors— continued REFERENCE TABLE Max P tot @ T ams—25*C LVceo lc Range @ lc Max mA (mA) NF (dB) Code (W) (V) h FE — BFR37 0.25 80-250 10 30 0.5-50 10 5Í8 750 BFW68 0.36 40 01-50


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    bfr37bfw6830792fbfx18+1419041dbfx31bfy7419068dbfy7530795xp348abfr37 sgstransistor c740sgs-ates2n238819142ec7202n2219 transistor PDF

    BS9365

    Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+12bs9302bfs36a2n929baw63af025baw68marking z9f008bzx88-c5v12n2475bfs46abzx88-c5v6 PDF

    1501A50

    Abstract: National Pn2907 pN3638A transistors tn2905 2N4403 NATIONAL SEMICONDUCTOR T0237
    Contextual Info: bôE ]> • b S ü ll3 G High Speed Saturated Switching Transistors continueai 3 Devices VGEO(SKt (Volts) Min 40 NPN PNP 15 hpE @ lc VC£(*at) (C 4 *» W@»c to# (MHz) (ns) (Volts) (ns) Max Max mA Min fflA Max mA mA Min /n p D(Amfc) Package (mW) @ 25°C


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    tn2219at0-237t0-39t0-92+7o-2361501a50national pn2907pn3638atransistors tn29052n4403 national semiconductort0237 PDF

    2N2369 SOT-23

    Abstract: pn4122 2N708 NPN switching transistor 2N4403 2N3467 2N3905 2N3906 2N4402 2N4403 MMBT3906
    Contextual Info: böE ]> • bsoii3 ü 003*1530 aob High Speed Saturateci Switching Transistors continueai ' l*re@lc PMP /IV VC£(sat @(C & mA (MHz) Min Package mA 15 300 T0-237(91) 850 m ft Min mA (Volts) Max 285 150 100 150 0.3 150 !" NPN (ns) Max W (Volts) Min rrM T/-AU R


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    s0113tn2219at0-2372n3467+102n3905t0-922n39062n44022n2369 sot-23pn41222n708npn switching transistor 2n44032n4403mmbt3906 PDF

    2N6369

    Abstract: 2N2483 2N2484 2N2894 2N3209 2N3962 2N3963 2N3964 2N3965 2N708
    Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS Type No. 2N3962 2N3963 2N3964 2N3965 hF EfiXC Plot VCEO mW M MNMAX (»>*) (V) MAX (">*) 60 80 45 60 100/300 100/300 250/500 250/500 0.01 0.01


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    2n39622n39632n39642n3965+92n9302n24832n2484ultr602n7082n9142n63692n28942n3209 PDF