2N6377 Search Results

2n6378

Contextual Info: 2N6377 2N6378 2N6379 HIGH-POWER PNP SILICON POWER TRANSISTORS 50 AMPERE .designed for use in industrial-military power amplifier and switching circuit applications. Low Collector-Emitter Saturation Voltage VcE sftt = 1-0 Vdc (Max) ) Ir = 20 Adc Fast Switching Times

2N5685

Abstract: 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278
Contextual Info: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 INC D O D O S B 11] S ZbC 0 0 2 3 9 |~ D ~fZ33~£ C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

2N5302 EB

Abstract: 2N1463 2n4271
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3

2N3053

Abstract: 2N5330 2N5011 2N6226 2N6278 2N6352 2N6353 2N2102 2N2727 2N3119
Contextual Info: C |:.;g ä ^ ji :tosto?»«îtM J t e ? ja^vMWT iSiiH ^ïi^,. ìp afeaw ^ 'g^w ìym ì O I I — • 6856191 TYPE CASE S IX Ìk S s w D ? . «rv if^ - ^ a ^ i- Æ ÿ sV si -.1 ao » 2N Numbe r Types P P C PRO D U C TS BREAKDOWN VOLTAGES VCB VCE CO RP Ô3D

2N6424

Abstract: 2N6213 2N6214 2N6226 2N6227 2N6228 2N6229 2N6230 2N6231 2N6246
Contextual Info: C li / Il BREEAKDO V VN V O LT A G E S SAT . V O L T A G ES M ax. h F:E < n m PNP D E V IC E PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST 'c 'c 100 (A) 1 'b (A) 0.125 VCE (V) 2 V BE (V) 1 10 100 1 0.125 0.5 1 3 25 100 3 0.3 1 2 2 3 20 80 3 0.3 1 2 7

Contextual Info: <sS&mi-Conductor ^Products., Una. TELEPHONE: 201 376-2922 (212) 227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6274 2N6275 2N6277 High-Power NPN Silicon TVansistors . . . designed for use In industrial-military power ampllfer and switching circuit

AP1069

Abstract: 2N6274 AP1112 to63 2N5685 2N5686 2N5926 2N6032 2N6215 2N6275
Contextual Info: A P I ELECTRONICS INC 0043592 A P I _ 2^ ELECTRONICS DE 1 00435^5 DOODEaì S | ~ INC ZbC 00239 ~fZ33~£ COLLECTOR CURRENT = 5 0 AMPS NPN TYPES Device No C ase VCBO Volts VCEO (sus) Volts 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278

MJE520

Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic

MTH13N50

Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Contextual Info: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:

2N2692

Abstract: 2n3718 Maa 325 2N6378 2N1495 2N5055 2N5143 2N5867 2N5872 2N6563
Contextual Info: G E N E R A L T R A N S I S T O R CO R P 24E D • 3^SaD01 D O D O D ^ fi ■ G eneral T ran sisto r Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905

2n6277

Abstract: ts 3110 TRANSISTOR itt500 2N6274 transistor 6277 08/bup 3110 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H ig h -P o w e r NPN S ilicon T ran sisto rs 2N 6274 2N 6275 2N 6277* . . . designed for use In Industrial-military power amplifer and switching circuit applications. *Motorola Prtf*rr»d 0*v1c* • High Collector Emitter Sustaining —

2SA1046

Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.

2N6277

Abstract: 2N6274 2N6275 2N6277 applications transistor 2N6274 1N3879 2N6377 MOTOROLA 2N6277
Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274