2N6312 Search Results

Contextual Info: 2N4231A 2N4232A 2N4233A 2N6312 2N6313 2N6314 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process,

2N6312

Abstract: 2N6313 2N6314
Contextual Info: SavantIC Semiconductor Product Specification 2N6312 2N6313 2N6314 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

2N6314

Abstract: 2N6312 2N6313
Contextual Info: Inchange Semiconductor Product Specification 2N6312 2N6313 2N6314 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

2N6312

Contextual Info: 2N6312 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

t066

Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
Contextual Info: MfiE » • 0133107 D0DD443 5EMELABI Type Number Rei Code 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317

2N4231

Abstract: 2N4233A IR425 2N4231A 2N4232A 2N6212 2N6312 2N6313 2N6314
Contextual Info: Æà MOS PEC COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS NPN 2N4231A 2N4232A 2N4233A .designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE!sat = 0 .7 V M a x .)@ lc = 1.5A ‘ Excellent DC Current Gain

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS 1*FE@ I C/ V c E PNP TO-66 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A V cE O V cE (sat) pr D * WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2NXXXX

Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
Contextual Info: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N4232A

Abstract: 2N4231 2N4231A 2N4233A 2N6312 2N6313 2N6314 TRANSISTOR 2n4231 transistor 2N6312
Contextual Info: COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS .designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE!sat = 0 .7 V M a x .)@ lc = 1 .5 A ‘ Excellent DC Current Gain hFE = 25-100 @ lc = 1.5 A

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

2N3738 equivalent

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

MJE13005A

Abstract: MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252
Contextual Info: STI Type: MJ13330 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 400 VCEO: 200 ICEV: 400 ICEV A: .25 hFE: 8.0 hFE A: 15 VCE: 1.5 VBE: 1.8 IC: 10 COB: 400 fT: 5.0 Case Style: TO-204AA/TO-3: Industry Type: MJ13330 STI Type: MJ13101 Notes: Polarity: NPN Power Dissipation: 175

Contextual Info: NEIII E N GL A N D SEMICONDUCTOR 5<ìE bSbHTTB D = 1-5À V ceocsus = 4 0 -4 2 5 V fT = 3-10 MHz □□□□□SD PIMP TO-66 lc M AX) / " NPN Comple­ ment Type No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N5345 2N5954 2N5955 2N5956 2N6049

IDA1012

Abstract: 2SA10120 IDA1307 2SA12440 bd94 SOLITRON
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 - 10 >= 5 A, SDT3716 SDT3752 SDT3752 SDT3752 2N5974 MJ2267 2N4901 SDT3703 SDT3703 SDT3703 ~~H~~~ 15 20 SDT3712 SDT3715 SDT3715 SDT3715 SDT3775 SDT3775 SDT3775 SDT3305 ~gH~g~ 25 30 SDT3325 SDT3325 SDT3325 MJE2010

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

SILICON TRANSISTOR CORP

Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
Contextual Info: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O

MJ480

Abstract: motorola MJ480 2n4913 motorola 2N4232 MJ2802 2n4233 2n5878 2n4912 2N5872 MJ481
Contextual Info: MOTOROLA SC BM {DIO DES/OPTO } 6367255 MOTOROLA SC DE|t,3b72SS □OaTTSl DIODES/OPTO 3 ^ 3 7 SILICON POW ER TR A N SISTO R DICE (continued) 2C6316 DIE NO. — NPN LINE SOURCE — PL500.418 NPN 3 ^ D O / 2C6318 / / PNP g51 DIE NO. — PNP LINE SOURCE — PL500.419

semelab 2N6287

Abstract: 2N6378E
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300

Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE

BU222

Abstract: MJ425 2N3738 BU208 BU222A MJ3029 2N3583 2N3584 2N3739 2N6211
Contextual Info: Silicon Power-Metal-Can NPN l C = 1.0 A. 2N 3583 2N 3738 2N 3739 l e = 2.0 A. 2N 3584 M J3026 MJ3027 2N 3585 2N 4240 v CEO V olts hp£ @ M in./M ax. •c Am p. v CE sat @ 'C V o lts Max. Am p. fT M Hz PD Watts Case PNP 2N 6420 2N 6 4 2 4 2N 6425 175 225 300

BD947

Abstract: to-53 a/TO111
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .