2N5954 Search Results

2n5955

Abstract: 2N5954 2N5956 2N6374 2N6372 2N6373
Contextual Info: Product Specification www.jmnic.com 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector-emitter saturation voltage ・Excellent safe operating area ・Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ・Designed for driver circuits,switching

2N5954

Contextual Info: 2N5954 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5954 Availability Online Store

2N5005 TO-59

Abstract: JANS2N5005 ISO 23814 to59 TO-59 23795
Contextual Info: Microsemi PNP Transistors Part Number PNP 2N5955 2N5954 2N6111 2N6109 2N6107 2N5743 2N5744 2N5386 . TIP115 TIP116 TIP117 : 2N5286 2N5287 2N5384 2N5385 2N5408 2N5410 2N5409 2N5411 2N5003 2N5005 JAN2N5003 JAN2N5005 JANS2N5003 JANS2N5005 JANTX2N5003 JANTX2N5005

65k5

Abstract: 2N637 1B12A 100SS 2N5955 2N6373 npn 100n 1a transistor 2N5956 100OE 2N5954
Contextual Info: Ceiifm l sem iconductor Corp. Central Sem iconductor Corp. 1 4 5 Adam s Avenue Hauppauge, New York 11 7 8 8 DESCRIPTI0N The CENTRAL SEMICONDUCTOR 2N5954, 2N6372 series types are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed

Contextual Info: NEIII E N GL A N D SEMICONDUCTOR 5<ìE bSbHTTB D = 1-5À V ceocsus = 4 0 -4 2 5 V fT = 3-10 MHz □□□□□SD PIMP TO-66 lc M AX) / " NPN Comple­ ment Type No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N5345 2N5954 2N5955 2N5956 2N6049

2N5954

Contextual Info: 2N5954 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

2N5955

Abstract: 2N5954 2N5956
Contextual Info: Inchange Semiconductor Product Specification 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area ・Complement to type 2N6372/6373/6374 APPLICATIONS ・Designed for driver circuits,switching

2N5954

Abstract: 2N5956 2N5955 2N6372 2N6373 2N6374
Contextual Info: 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 SERIES types are complementary Silicon Power Transistors manufactured by the epitaxial base

Contextual Info: 2N5954 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

2N5954

Abstract: 2N5955 2N6273 2N5956 2N6274 2N6372
Contextual Info: 2N5954 2N5955 2N5956 SILICON POWER TRANSISTORS 6.0 AMPERE MEDIUM-POWER PNP SILICON TRANSISTOR .General-Purpose Types for Switching Applications in Military. Industrial and Commercial Equipment. 40, 60, 80 VOLTS 40 WATTS 2 n 6372, 2 n 6273, 2 n 6274 • C O M PL E M E N T S TO

TA7265

Abstract: TA7264 TA7266 TA7264 circuit 2N5954 2N5955 2N5956 T0-213AA TA72
Contextual Info: □1 387 5081 G E SOLID DEJ3Û7S0Û1 STATE 0 1E •File N u m b e r 675 3 QQ17411 17411 D General-Purpose Power Transistors 2N5954, 2N5955, 2N5956 Silicon P-N-P Medium-Power *Transistors

2n6373

Abstract: 2N5954
Contextual Info: 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 series devices are complementary silicon power transistors manufactured by the epitaxial base process,

2N5954

Abstract: M9192 2N5955
Contextual Info: Power Transistors File Num ber 2N5954, 2N5955, 2N5956 675 HARR IS S E M I C O N D SE CT OR 27E D 4302271 OGl'nO? T Silicon P-N-P Medium-Power T ransistors 7 «HAS " - 3 3 ' TERMINAL DESIGNATIONS G eneral-Purpose Types for Sw itching Applications Features:

2N5954

Abstract: 2n5955 2N5956
Contextual Info: SavantIC Semiconductor Product Specification 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·Complement to type 2N6372/6373/6374 APPLICATIONS ·Designed for driver circuits,switching

Contextual Info: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC 2b D «7*^ 1 D eT| □□43512 0000SS7 1 | COLLECTOR CURRENT = 5 AMPS PNP TYPES - CONTINUED Device No AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088 AP1102 AP1103 AP1121 AP1135

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

1431T

Abstract: BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

Ultrasonic amplifier 50w

Abstract: 2n377 2n3773 power Amplifier BDY29 BDY37 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

RCA 40874

Abstract: 2N6175 2N3055 specification 2N6179 2N6474 JAN 2n3055 pnp transistor 2N6175 rca 2n1485 2N5296 RCA rca Transistors 4a 322
Contextual Info: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. P y “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. jTO-39»* lc > - 1 A max. P y - 10 W max. (TO-39 * 4 2 x4 2 4 2 x4 2

2N5415

Abstract: 2N3055 RCA 2N3054 transistor BUX66C rca 2n3055 RCA 40250 2N3439 2N3440 rca transistor 508 2N6079
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

2N3055 RCA

Abstract: rca413 RCA411 2N3440 rca rca 2n3055 rca 41013 2N5415 2N3772 RCA BUX 64 2N3439
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

2N6491 SWITCH

Abstract: 2N6489 SWITCH 4-0992 ta8662 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS 1*FE@ I C/ V c E PNP TO-66 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A V cE O V cE (sat) pr D * WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125