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2N5873 Datasheets (25)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N5873	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=7 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=115	Original	PDF	10.96KB	1
2N5873	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF	404.58KB	5
2N5873	API Electronics	Short form transistor data	Short Form	PDF	70.1KB	1
2N5873	Crimson Semiconductor	EPITAXIAL BASE / PLANAR Transistors	Scan	PDF	40.14KB	1
2N5873	Diode Transistor	TO-3 / Various Transistor Selection Guide	Scan	PDF	66.32KB	1
2N5873	Diode Transistor	35 to 500V Transistor Selection Guide	Scan	PDF	66.32KB	1
2N5873	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF	43.11KB	1
2N5873	General Transistor	Power Transistor Selection Guide	Scan	PDF	401.54KB	5
2N5873	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	43.75KB	1
2N5873	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.56KB	1
2N5873	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	56.61KB	1
2N5873	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	160.46KB	1
2N5873	Unknown	Transistor Replacements	Scan	PDF	92.57KB	1
2N5873	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	164.55KB	1

2N5873	Unknown	Cross Reference Datasheet	Scan	PDF	38.89KB	1
2N5873	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	99.35KB	1
2N5873	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	117.33KB	1
2N5873	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	93.16KB	1
2N5873	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	39.04KB	1
2N5873	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.4KB	1

2N5873 Price and Stock

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Microchip Technology Inc 2N5873 Transistor - NPN Silicon - Power - 60V - 7A - ~4 MHz
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	2N5873					1 - 10 - 100 $38.95 1000 $38.95 10000 $38.95	Buy Now
Avnet Americas	2N5873	Bulk		50 Weeks	100	1 - 10 - 100 $40.75 1000 $39.23 10000 $38.74	Buy Now
Newark	2N5873	Bulk			500	1 - 10 - 100 - 1000 $43.94 10000 $43.94	Buy Now
Microchip Technology Inc	2N5873			28 Weeks		1 $43.94 10 $43.94 100 $43.94 1000 $43.94 10000 $43.94	Buy Now
Onlinecomponents.com	2N5873					1 - 10 - 100 $38.95 1000 $38.95 10000 $38.95	Buy Now
Solid State Electronics 2N5873 Trans GP BJT NPN 60V 7A 115000mW 3-Pin(2+Tab) TO-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5873		1		1	1 $30.00 10 $30.00 100 $30.00 1000 $30.00 10000 $30.00	Buy Now
Advanced Semiconductor Inc 2N5873
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5873		9			1 $73.12 10 $65.81 100 $65.81 1000 $65.81 10000 $65.81	Buy Now
SES 2N5873
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5873		1			1 $32.50 10 $32.50 100 $32.50 1000 $32.50 10000 $32.50	Buy Now
Texas Instruments 2N5873 Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2N5873		5,256			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2N5873 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N5873 Abstract: 2N5874 Contextual Info: TYPES 2N5873, 2N5874 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS 00 H FOR PO W ER -AM PLIFIER A N D HIGH-SPEED-SW ITCHING APPLICATIO N S DESIG NED FOR C O M PLEM EN TA R Y USE W ITH 2N 5871, 2N 5872 C < I - TJ i— m m v> “ H N "mechanical data •	OCR Scan	2n5873 2n5874	PDF
2N5873 Abstract: 2N5874 Contextual Info: SavantIC Semiconductor Product Specification 2N5873 2N5874 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base	Original	2n5873 2n5874	PDF
2N5873 Contextual Info: 2N5873 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5873 o204aa 31-jul-02	PDF
2N5872 Abstract: 2N5871 Contextual Info: TYPES 2N5871, 2N5872 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5873, 2N5874 • 115 Watts at 25°C Case Temperature • 7-A Rated Continuous Collector Current	OCR Scan	2n5871 2n5872 2n5873 2n5874	PDF
2N5873 Contextual Info: 2N5873 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5873 o204aa 16-jul-02	PDF
MAX607 Contextual Info: 2N5873 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5873 o204aa 18-jun-02 max607	PDF
2N5873 Abstract: 2N5874 Contextual Info: Inchange Semiconductor Product Specification 2N5873 2N5874 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base	Original	2n5873 2n5874	PDF
2N3233 Abstract: 2N3232 2N3234 2N5873 2N5874 2N6315 2N6316 2N6317 2N6318 2N1724A Contextual Info: A P T FI.ECTRONICS A P I INC 26C 0 0 2 2 8 ELECTRONICS INC at "T-&3~.D{ D e \| D I ^ S T a DOOOSEfl □ ~ COLLECTOR CURRENT = 7 AMPS NPN TYPES - CONTINUED Device No 2N5873 2N5874 2N6315 2N6316 VCBO v CEO (sus Case Volts Volts 60 60 TO-3 80 80 TO-3 60 TO-66 60	OCR Scan	t-33-0 0043s 2n5873 2n5874 +102n6315 2n6316 2n6317 2n6318 ap1084 2n1724 2n3233 2n3232 2n3234 2n1724a	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	ic hxj 2038 1n52398 db5t tfk 102 cny 70 +6hxj 2038 rca 40361 transistor rca 40362 tfk 680 cny 70 diode equivalent 1n34a 2n5952 equivalent	PDF
2N5866 Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447 Contextual Info: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75	OCR Scan	5-500v 2n1487 2n1488 2n1489 +152n1490 5n5883 2n5886 2n5884 2n5929 2n5930 2n5866 2n4348 semiconductor 212s 2n5675 2n5867 2n5872 nes 2n5672 2n5038 2n3447	PDF
NES 2N5672 Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789 Contextual Info: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE	OCR Scan	0-100v d0d00s4 2n3789 2n3713 +102n3790 2n3714 2n3791 2n3715 2n3792 2n3716 nes 2n5672 2n4904 5330-30 2n5867	PDF
Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10	OCR Scan	5-500v 2n3773 2n3788 2n3902 +62n4070 2n4071 2n4347 2n4348 2n4913 2n1487	PDF
transistor 40411 Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 Contextual Info: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025030 .025 @30 .025@30 .025’ @30 .20 @30	OCR Scan	tc-25 2n1487 2n1488 2n1489 +102n1490 2n1702 2n3442 2n4347 2n3715 2n3791 transistor 40411 2n5867 2n6258 40411 transistor	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2n3016 2n3021 2n3022 2n3023 +162n3024 2n3025 2n3026 2n3055 2n3076 2n3171 buv48i bu808dxi bd699 buv18a bd241cfi transistor 2sa1046 buw52i bu808dfi equivalent bu724as 2sa1046	PDF

BUZ901P Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410 Contextual Info: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0	Original	buz341 o-247 buz344 buz346 +12o-204aa/to-3 dts409 dts410 buz901p buz900p buz900 buz90a d44c3 buz94 buz77 buz345 dts107	PDF
B0719 Abstract: BU4080 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070 Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 2SC2654K 2SC2654J 2N5490 2N5491 2N5494 2N5495 2So124AH RCA1C05 40875 2SC521A 2S01061 2S01063 2S01363 2S01412 1001412 ID0553 2So1905 2S05530 60 65 70 75 80 90 95 926 l.inmson~eml 2So125AH	Original	bu4080 bu606 o-220var o-220ab +10o-220 b0719 g80120 2n5849 2sc3254q 2s0635 2n6455 2s0119 2sc793 bu6070	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2n5655 2n5656 2n5657 tip73b +14tip74 tip74a tip74b tip75 tip75a tip75b 2n5657 equivalent 2sa1046 bu326 bu108 bu100 2sc2331 y tip47 419 2n3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	bd157 bd158 bd159 tip73b +16tip74 tip74a tip74b tip75 tip75a tip75b mje494 2sc1419 bd 804 2sd675 mje104 bd581 bd135 curves mj1000 dts-4041 2n5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2n6609 2n3773 2n6667 2n6668 +13220ab 2n6387 2n6388 2sd669 equivalent bd801 bdy29 equivalent bu108 2sc2080 2sd436 2n6021 bd345 tip122 d-pak package 2sd544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	mjf6107 2n6107 e69369 tip73b +16tip74 tip74a tip74b tip75 tip75a tip75b 2sc495 nsp41a bu108 transistor bd614 motorola 2sa663 bd4122 bd661 mj1000 nsp2100 d45vh4 similar	PDF
"Tektronix 475" Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,	Original	48/bux bux48 bux48a ampere32 +16tip73b tip74 tip74a tip74b tip75 tip75a tektronix 475 equivalent 2n6488 tip42c equivalent bu108 motorola darlington power transistor motorola 266 to-204aa transistor d45h11 equivalent replacement pnp bux transistor replacement table for transistor tip3055 equivalent	PDF
D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	mje16204 tip73b tip74 tip74a +15tip74b tip75 tip75a tip75b tip75c d42c5 transistor bc 647 2n5302 eb pin out transistor tip2955 bs170 replacement 2sc141 bu108 bc 658 motorola transistors mje3055 to 127 mc7812 to-220	PDF
mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	mje521 mje371 tip73b tip74 +16tip74a tip74b tip75 tip75a tip75b tip75c mje521 equivalent bu108 2n3055 plastic 2n6488 motorola motorola transistors mje3055 to 127 3904 transistor bdx54 tip122 tip127 audio amp bu326 bu100	PDF
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	mje2955t mje3055t tip73b tip74 +16tip74a tip74b tip75 tip75a tip75b tip75c 2n3055 bu108 an415a mje2955t st bdx54 2n3055 audio amplifier application note bu326 bu100 mje13005 bdv64	PDF

2N5873 Search Results

2N5873 Datasheets (25)

2N5873 Price and Stock

Microchip Technology Inc 2N5873

Solid State Electronics 2N5873

Advanced Semiconductor Inc 2N5873

SES 2N5873

Texas Instruments 2N5873

2N5873 Datasheets Context Search

2N5873

2N5873

2N5873

2N5872

2N5873

MAX607

2N5873

2N3233

IC HXJ 2038

2N5866

NES 2N5672

transistor 40411

BUV48I

BUZ901P

B0719

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

"Tektronix 475"

D42C5

mje521 equivalent

2N3055