2N5656 Search Results

2N5655

Abstract: 2N5656 2N5657
Contextual Info: MOTOROLA Order this document by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

Contextual Info: SEMELAB LTD 37E T> | fil33167 0000D23 3 1 TVpe No. Reliability Polarity Option 2N5656 2N5657 2N5663 2N5664 2N5665 SCREEN HI-REL HI-REL NPN NPN NPN NPN NPN 2N5666 2N5667 2N5671 2N56722N5675 HI-REL HI-REL CECC CECC HI-REL NPN NPN NPN NPN PNP 2N5676 2N5679 2N5680

to126 case

Abstract: BD139 BD136
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

2N5655

Abstract: 2N5657 2N5656
Contextual Info: Product Specification www.jmnic.com 2N5655 2N5656 2N5657 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High breakdown voltage APPLICATIONS ・For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters;

Power Transistors TO-126 Case

Abstract: MJE240 MJE520 datasheet MJE520 equivalent mje521 equivalent MJE243 equivalent BD139 N BD234 BD683 MJE234
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5483

Abstract: BD173 diode 2U 66 BD171 MJE30 MJE2360T
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE »T ON) Min (Hz) Max k)N Max (A) (8) •cBO r (CE)Mt Max (Ohmt) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . .

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

2sd452

Abstract: 2SD444 2SD442 2SD454 2SD446 2SD436 2SD405 2SD466 2SD403 2SD448
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SD401 200 5 2A 2SD401A 200 5 2A 2SD402 200 5 2A 2SD402A 200 5 2A Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* VCE Ic (ºC) (MHz) (V) (mA) 20W 150 (Tc=25ºC)

Je 243

Abstract: JE371 je240 JE171 JE340 transistor BD 341 bd189
Contextual Info: STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 1 CASE 77-07 TO-225AA R e s is tiv e S w itc h in g Ic C o n t Am ps v C E O (s u s ) Volts M ax M in NPN 0.3 350 0 .5 »f @ ic US ps @ lc *T MHz Amp M ax M ax Amp

2N3055 plastic

Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art

transistor rc 3866

Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It

BU108

Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •

tip122 tip127 audio amp

Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc

MJL21194 equivalent

Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

BU108

Abstract: C 3883 2SA1046 2SC7 MOTOROLA TIP115 transistor TIP116 TEXAS All similar transistor 2sa715 BU326 BU100 2N6254 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 1.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

BU108

Abstract: 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON CASE 77–08 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

mje13009 equivalent

Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power

ST T4 3580

Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc

TRANSISTOR 2SC2366 TO220

Abstract: K 3569 7.v equivalent 2N3792 MOTOROLA 2N3055 transistor equivalent BU108 mjf18204 equivalent TRANSISTOR 2SC1669 motorola AN485 RCA1C07 D45H111
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS The MJE/MJF18204 have an application specific state–of–the–art die dedicated to

bu806 REPLACEMENT

Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.

MJE15020

Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment

pin configuration NPN transistor BD679

Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc