2N5412 Search Results

Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

2N3055

Abstract: 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882
Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

Jan2N3055

Contextual Info: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100

terminals of 2n3055

Abstract: 2n3055 2N4211 2N3238 2N3239 TO111 package 2N3667 2N3236 2N3240 2N5882
Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

JANTX2N5157

Abstract: 2N3445
Contextual Info: Microsemi NPN Transistors Part Number 2N6316 2N3788 2N5838 2N5839 2N5840 JANTXV2N3902 2N3902 JAN2N3902 JANTX2N3902 2N5157 JAN2N5157 JANTX2N5157 JANTXV2N5157 2N5240 2N6542 2N6543 2N5049 2N5006 2NS008 2N5048 JANS2N5239 2N6563 2N6562 2N6569 2N5412 2N3597 2N3598

Contextual Info: Ìl S U ELECTR O NICS, IN C . 17 COLLECTOR CURRENT = 15 AMPS NPN TYPES v CBO VCEO sus Volts Volts Device No Case 2N3055 JAN 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 T O -3

2N5385

Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
Contextual Info: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO

Contextual Info: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152

2N3055

Abstract: 2N3235 2N3236 2N3238 2N3239 2N3055 TO-3 2N3240 2N3667 2N5412 2N5881
Contextual Info: A P I E L E CT RONI CS I NC ~ 2L, Î F | d 0 4 3 S cIE D0DDS33 4 i COLLECTOR CURRENT = 12 AMPS NPN TYPES 1 I Device Nc C ase v CBO Volts 2N6569 TO.-3 45 VCEO sus Volts 40 VEBO Volts 5 Min Max VCE ic VCE (sat) 15 200 4 3 1. 5 VBE (sat) @ic 4 2 Ft I MHz 1

B0347

Abstract: B0907 st TIp3055 BOY20 sk322 2SC3694 mje1661 PTC140 700U 2N3055H MOTOROLA
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 - -45 50 >= 60 65 70 75 SO B0545A B0545A MJE5220 MJE5221 B0347 BOTS1F BOY73 BOY73 wvrr OTS104 STS104 2SC3256 2SC3694 BOW40 2S01193 SK3222 S01407-S PTC140 KT819V BOX60 BOX60 BOX60 TIP3055

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N3055

Abstract: 2N6472 2N3055 TO-3 2N3235 2N3236 2N3238 2N3239 2N6569 2N3240 2N3667
Contextual Info: COLLECTOR CURRENT = 12 AMPS NPN TYPES 1 1 Device Nc 2N6569 C ase TO.-3 VCBO Volts 45 VCEO Volts 40 £us> Ve b o Volts 5 Min 15 Max 200 VCE 4 COLI j ECTO R CURRENT = 12 I 1 D evice Nc 2N6594 Case TO -3 VCBO VCEO (sus Volts V olts 40 45 vebo Volts 5 Ma_x 200

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

SM2174

Abstract: SM2184 2N3055H MOTOROLA 2SD878 mj2955 TO-218 BDY73 BD130 BDY20 2SD151 2SA1042
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (Hz) >CBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15

2n5480

Contextual Info: K □ □ □ ° Q ru ru lr X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o CD r- CO CD CD CD IO lO Ó Ó Ó Ó Ó 1— 1 — 1— f— I— to to CO CO to Ó Ó Ó Ó Ó f— 1— 1— 1— 1— TO-3 TO-39/TO-5 TO-111 TO-61 TO-3 » TO-3 T0-3 TO-59 T0-111

Contextual Info: r le = 10 AMPS DEVICE TYPE VOLTS PD @ 100°C WATTS hFE@ lc Min. Max. AMPS PACKAGE 2N2811 2N2812 2N2813 2N2814 TO-61 TO-61 TO-61 TO-61 80 80 120 120 8.0 8.0 8.0 8.0 40.0 40.0 40.0 40.0 2040 20 40 - 60 120 60 120 2N4070 2N4071 2N4301 2N5218 2N5288 2N5289 100

2N2613

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL ^5 SEM ICONDUCTO R » F J h TIÛSTD □□OSOcî 4 1 95D 02094 D T le = 1 0 T ' 3 3 -/-? A M P S Ib AMPS It MHz Iceo/ IcEV pAMP 5.0 5.0 5.0 5.0 10.0 0.5 0.5 0.5 0.5 1.0 15 15 15 15 20 0.1 0.1 0.1 0.1 0.1 60 60 60 60 60

2N3238

Abstract: 2N3239 2N3055 JAN 2N3240 2N3667
Contextual Info: COLLECTOR CURRENT = v CBO VcEO sus Volts Volts 100 60 100 70 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-61 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 100 65 90 80 80 160 50 80 60 80 55 100 50 70 90 150 70 55 90 80 80 160 50 60 60 80 45 80 40 60 80 110 hiFE Ve BO

2N3184

Abstract: 2N3185 2N3186 2N3195 2N3196 2N3198
Contextual Info: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152

SDT9207

Abstract: SDT9202 SDT9209 SDT9204 SDT9208 SDT9203 SDT9205 SDT9201 2N3236 2N6046
Contextual Info: 39 SILICON POWER TRANSISTORS CURREN T GAIN SATURATION VOLTAGES s> TYPE CASE NUMBER TYPE VCBO V VCEO V IV V EBO hFE MIN. I MAX. VCE <s> 'c A V CE s V V BE:(s) I V *C A I *B A 15 AMP SILICON SIPN 2 N3055 2N3235 2N3236 TO-3 TO-3 TO-3 100 65 90 60 55 90 7.0 7.0

2N2611

Abstract: 2N8674 2N5675 2N2812 2N2813 2N4070 2N4071 2N4301 2N5218 2N5313
Contextual Info: SûUARE î> C O / GENERAL “ ^ 3 9 1 8 5 9 0 G EN E R A L SE M IC O N D U C T O R _ ' $ ÖS2SS0Ö 95D 02094 D T -J 3 -// le = 10 A M P S / ‘ BVceo PACKAGE VOLTS «CEV VOLTS b v eb0 2N2611 TO-61 60 2N2812 TO-61 60 2N2813