2N51 Search Results

2N5001

Abstract: TCA 875 MW-82 2N5149 2N4999
Contextual Info: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

2N5157

Contextual Info: TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR • 100 W at 75° C Case Temperature • 700 V Collector-Emitter Off-State Voltage • Min V BR CEO of 400 V • Max t0ff of 1.7 /is at lc = 1 A • Typ VcE(sat) of 0.3 V at lc = 3.5 A • Typ f r of 5 MHz at 12 V , 0.2 A

2n5116

Contextual Info: 2N5116 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5116 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications.

Contextual Info: LS5116 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5116 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications.

2N5114

Abstract: 2N5116 2N5115
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 2N5115 2N5116 MQ = JAN Equivalent MX = JANTX Equivalent

Contextual Info: fr JLW Siliconix PSCIA SERIES DIE P-Channel JFETs in c o rp o ra te d The PSCIA Series is a p-channel JFET analog switch designed to complement our n-channel NCB Series. PSCIA1CHP* 2N5114 J174 SST174 They feature low on-resistance and good off-isoiation as well as the fast switching associated with JFETs. Die

Contextual Info: 2N5114J AN/J ANTX/JANTXV Series Vishay Siliconix P-Channel JFETs 2N 5114 J AN/J ANTX/JANTXV 2N 5115J AN/J ANTX/JANTXV 2N 5116 J AN/JANTX/J ANTXV PRODUCT SUMMARY Part Number VGS off (V) r D S(on) Max (£2) Id (off) TVp (pA) toN Max (ns) 2N5114 5 to 10 75 -1 0

2N5177

Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5177 Silicon NPN high power UHF transistor 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:

2n5108

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5108 DESCRIPTION •High Current-Gain Bandwidth Product : fT= 1200MHz Min @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE APPLICATIONS ·Designed for general purpose Class C amplifier applications

2N5002

Contextual Info: TYPES 2N5002, 2N5004. 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR AN SISTO RS W IT H CO M PUTER-D ESIG NED ISO TH ER M A L G EO M ETR Y 3 3 C B -4 mC< • For Complementary Use with 2N 5003, 2N 5005, 2N 51 51, and 2N 5153

2N5190

Abstract: 2N5193 2n5195 2N5194
Contextual Info: Inchange Semiconductor Product Specification 2N5193 2N5194 2N5195 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2N5190/5191/5192 ・Excellent safe operating area APPLICATIONS ・For use in medium power linear and

Contextual Info: B 19 9 -9 7 2N5114, 2N5115, 2N5116 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • ANALOG SWITCHES Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Gate Current 50 mA Continuous Device Power Dissipation

2N5172

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE UNITS

Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10

2n5191 jan

Abstract: 2N5191
Contextual Info: 2N5191 2N5192 NPN power transistors Features • NPN transistors Applications ■ s ct Linear and switching industrial equipment u d o Description r P e The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

Contextual Info: 2N5151 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5151J • JANTX level (2N5151JX)

2N5116

Abstract: 2N5114 2N5115 T018
Contextual Info: DMÜ^DL 2 N 5 1 1 4 -2 N 5 1 16 JAN, JTX P-Channel JFET FEATURES PIN CONFIGURATION • ON Resistance < 75 ohms 2N5114 • • 'D (off) < 5 0 0 pA Switches directly from T ^ L Logic (2 N 5 116) 1 TO-18 GENERAL DESCRIPTION Ideal for inverting switching or "Virtual Gnd" switching

2N5154L

Contextual Info: Data Sheet No. 2N5154L Generic Part Number: 2N5154L Type 2N5154L Geometry 9201 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/544 Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case.

2N5152L

Abstract: MIL-PRF-19500 544 electrical
Contextual Info: Data Sheet No. 2N5152L Generic Part Number: 2N5152L Type 2N5152L Geometry 9201 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/544 Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case.

2N5114

Abstract: 2N5116 2N5114-16 2N5115 X2N5114-16
Contextual Info: P-Channel JFET Switch LLC 2N5114 – 2N5116 GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS).

2N5109

Abstract: 2C5109 2N5109UB SD5109 SD5109F SQ5109 SQ5109F
Contextual Info: Data Sheet No. 2C5109 Generic Packaged Parts: Chip Type 2C5109 Geometry 1007 Polarity NPN 2N5109 Chip type 2C5109 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N5109, 2N5109UB, SD5109, SD5109F, SQ5109, SQ5109F Product Summary:

2N5154SMD

Contextual Info: 2N5154SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108