2N4427 TRANSISTOR Search Results

2N4427

Abstract: BFR98 transistor 2N4427 2n4427-bfr98
Contextual Info: 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications. TO-39 INTERNAL SCHEMATIC DIAGRAM

Transistor 2n4427

Contextual Info: 2N4427 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.

a7f transistor

Abstract: 2N4427 BFR98 npn zg Transistor 2n4427 A-7-F
Contextual Info: r Z Z SCS-THO M SO N ^7# 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and os­ cillator applications.

2n4427

Abstract: transistor 2N4427 high frequency transistor 2N4427 equivalent
Contextual Info: 2N4427 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI 2N4427 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS 400 mA IC VCE 20 V PDISS 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C

Contextual Info: 3QE D • 0 Q 31 22 1 5 ■ ~T> -3 3 -0 3 SGS-THOMSON [»^ miOTFlFMOfOS 2N4427 BFR98 S G S-THOMSON -— — - VHF OSCILLATOR POWER AMPLIFIER DESC RIPTIO N The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in JedecTO-39 metal case. They are designed for VHF class A, B, or C amplifier and os­

Contextual Info: 2N4427 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon types are silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.

2n3866

Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial

2n4427

Abstract: 2N3866
Contextual Info: tPiotLati, Gnu. <J\fuxr TELEPHONE: 973 376-2922 20 STERN AVE. SPHINQRELD, NEW JERSEY 07081 U S.A. (212)227-6005 FAX: (973) 376-6960 Silicon planar epitaxial overlay transistors 2N3866; 2N4427 APPLICATIONS DESCRIPTION NPN overlay transistors in TO-39 metal packages with the

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

2n4427

Abstract: 62503
Contextual Info: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39

2N4427

Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
Contextual Info: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39

2n4427 MOTOROLA

Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz

2n4427 MOTOROLA

Abstract: motorola 2N4427 2n4427 MSC1301 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA

2n4427 MOTOROLA

Abstract: 2N4427
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4427 The R F Line 1 W - 1 7 5 MHz NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH FREQUENCY TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator N PN SILIC O N applications in m ilita ry and industrial equipm ent. Suitable fo r use

Contextual Info: 2N4427 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)400m# Absolute Max. Power Diss. (W)3.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)20u° @V(CBO) (V) (Test Condition)12

t 3866 power transistor

Abstract: transistor 3866 s t 3866 transistor transistor 3866
Contextual Info: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.

4427B

Abstract: 2N4427 FR98 SGS-Thomson
Contextual Info: SGS-THOMSON 2 N 4427 B F R 98 R iiæ m iM Q iO g i VHF O SCILLATO R POW ER AM PLIFIER D E SC R IPTIO N The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Je d e c T O -39 metal case. They are designed to r VH F class A, B, or C amplifier and o s­

2N4427 equivalent

Abstract: RCA-2N4427 2N4427 2n4427 rca Trimmer ARCO Transistor 2n4427
Contextual Info: File No. 228 roQBZ/D RF Power Transistors Solid State Division _ 2N4427 Silicon N-P-N Overlay Transistor High-G ain D river fo r V H F -U H F Features: • 1 W o u tp u t w ith 10 d B gain m in . at 1 7 5 M H z VCC - 12 V ■ 0 .4 W o u tp u t w ith 5 d B gain (ty p .) a t 470 M H z

2N3866

Abstract: 2n4427 philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application
Contextual Info: • bb53^31 N AflER 0Q2T7Ö1 b02 * A P X PHILIPS/DISCRETE bTE 2N3866 2N4427 P SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N o verlay transistors in T O -3 9 m etal envelopes w ith the c o lle c to r connected to the case. T he devices are p rim a rily intended fo r class-A, B o r C am plifiers, frequency m u ltip lie r and o sc illa to r circuits.

BLY32

Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Contextual Info: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors

t122 25 3

Abstract: BLW85 t122 25 10 BLW80 BFS22A BFQ42 SOT-120 BFQ43 T122 blw79
Contextual Info: Philips Semiconductors Concise Catalogue 1996 RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS RF power transistors VHF 25 - 175 MHz BIPOLAR TRANSISTORS type num ber load power @ 175 MHz W power gain @ 175 MHz (dB) supply voltage (V) package

BLY93A

Abstract: blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88
Contextual Info: 60 RF/Microwave Devices Bipolar RF Transmitting Transistors VHF 25175M H z Package Outline Type No. Load Power W @ 175MHz Power Gain (dB) @ 175MHz Supply Voltage (V) 0.7 1.5 3 9 8 8.4 9.4 7.4 7.5 7.5 7.5 7.5 1 2 2 4 4 4 4 8 8 8 10 15 15 15 15 25 25 28 30

2N3866

Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains