2N402 Search Results

Contextual Info: 2N4029 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed switching • Low Power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4029J • JANTX level (2N4029JX) and

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

2N4026

Contextual Info: 2N4026 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

2N4029

Contextual Info: Data Sheet No. 2N4029 Generic Part Number: 2N4029 Type 2N4029 Geometry 6700 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/512 Features: • • • • General-purpose transistor for high speed switching and driver applicatons. Housed in a TO-18 case.

JAN2N4033

Abstract: JANTX2N2907 2N390E 2N4033 HS2907A
Contextual Info: Microsemi Microsemi Division Package Outline kype iif PNP 2N2907A HS2907A JAN2N2907A JANTX2N2907A JANTXV2N2907 HS5087 HS3904 HS3906 2N4029 2N4029 2N4029 2N4029 2N390E 2N4403 PN2907A 2N3811L JANTX2N3810 JANTX2N3810L JANTX2N3811 JANTX2N3811L JANTXV2N3810

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 DEVICES LEVELS 2N4029 2N4033 2N4033UA 2N4033UB

2SA708 NEC

Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03

2N4029

Abstract: 2N4033 Semicoa 2N4033 transistor 2N4033
Contextual Info: Data Sheet No. 2C4029 Generic Packaged Parts: Chip Type 2C4029 Geometry 6700 Polarity PNP 2N4029, 2N4033 30 MILS B E 30 MILS Chip type 2C4029 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N4029, 2N4033 Product Summary:

2N4029

Contextual Info: 2N4029, 2N4033 Product Preview Small Signal Switching Transistor PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/512 Qualified • Available as JAN, JANTX, and JANTXV 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage

2n402

Contextual Info: 2N4029 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed switching • Low Power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4029J • JANTX level (2N4029JX) and

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

Contextual Info: D a ta S h e e t No. 2 C 4 0 2 9 SEMICONDUCTORS Generic Packaged Parts: Chip Type 2C4029 Geometry 6700 Polarity PNP 2N4029, 2N4033 1 Chip type 2C4029 by Semicoa Semi­ conductors provides performance similar to these devices. Part Numbers: 2N4029, 2X4033 Product Summary:

2N4029

Abstract: 150M
Contextual Info: 2N4029 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

2N4033

Abstract: 2N4125 NPN 2N4047 8VC80
Contextual Info: D i V1CÍ TYPE PACKAGE BVCEO 8V C 80 BVEBO C B O # V C B IV M M |V I M M IVI M M l» A | 1.7*A 1.7*A 50 50 50 2N4013 ÎN 4 0 I4 2N4036 2N4027 2N 40Î8 NPN NPN PNP PNP PNP T O -18 T O -18 T O - 18 T O -18 T O -18 30 50 60 80 60 50 80 60 80 60 6 6 5 5 5 2N4029

transistor 2N4033

Abstract: 2N4033 2N4029 transistor 2N4029 2n4033 transistor 2N4033 JANTXV
Contextual Info: TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 Devices Qualified Level 2N4029 JAN JANTX JANTXV 2N4033 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VALUE

2N4029

Abstract: 0038 ic
Contextual Info: CRO 2N4029 PNP SILICON TRANSISTOR 54.74(0.19 DESCRIPTION 2N4029 is PNP silicon planar epitaxial transistor for AF medium power drivers and outputs. 0 5 .3 ( 0 .2 1 ) 0,76 5 .5 6 (0 .2 2 ) (0.03) _f r c i 1 45 1.04 9 7 ( 0 .0 3 8 ) ( 0 .0 4 ) 12.7(0.5>MIN

2N4028

Abstract: 150M
Contextual Info: 2N4028 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

Contextual Info: Data Sheet No. 2N4029 C=L SEMICONDUCTORS G eneric Part Num ber: 2N4029 Type 2N4029 G eom etry 6700 P olarity PNP Q ual Level: JAN - JA N TXV REF: M IL-P R F -19 5 0 0 /5 1 2 Features: • G eneral-purpose transistor for high speed switching and driver applicatons.

cv8616

Abstract: BC107-108-109 2N2905 MOTOROLA 2N2906 JANTX 2N2904 transistor 2N2904A 2N4033 motorola 2n4033 2N2222A JAN 2N2222A JANTXV
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200 200

2N402

Contextual Info: 2N4026 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

AF306

Abstract: 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 2N1524 2N1426 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 2N77 ~~Jg~ 15 20 AF306 2S8188 2N612 2N59 2N60 2N61 2N613 2N1561 ~~~~~~ 25 30 35 40 2N1692 2N1693 2N672 2N673 2N402 2N403 2N700 2N700A 2N3283 2N3284

2N4029

Contextual Info: TECHNICAL DATA 2N4029 JAN, JTX, JTXV 2N4033 JAN, JTX, JTXV MIL-PRF Processed per MIL-PRF-19500/512 DEVICES QML PNP SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol VALUE Units VCEO VCBO VEBO IC PT 80 80 5.0 1.0 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage

2N4026

Abstract: 4033 tdk 4029 IC 2N4033 ic 4026 IC 4029
Contextual Info: TYPES 2N4026 THRU 2N4033 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L S 731 1 9 8 2 , M A R C H 1973 M E D IU M POWER P-N-P TRAN SISTO RS FOR CO M PUTER M E M O R Y APPLICATIO N S • Increased Dissipation at 2 5 °C Case Temperature . . . 10 W Max 2N 4030 thru 2N 4033