2N3700 DIE Search Results

2n3700 geometry

Abstract: 2N3700 DIE
Contextual Info: 2N3700 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3700J • JANTX level (2N3700JX)

2N3700 DIE

Contextual Info: 2N3700 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3700J • JANTX level (2N3700JX) • JANTXV level (2N3700JV)

2N3700 DIE

Abstract: 2N3700 Dose 2N3700 2N3700J 2N3700JS 2N3700JV 2N3700JX
Contextual Info: 2N3700 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3700J • JANTX level (2N3700JX)

Contextual Info: MSR2N3700 Qualified Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a TO-206AA package,

Contextual Info: MSR2N3700UB Screened Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700UB 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a UB and UBC package,

2N3700 DIE

Abstract: PCB land 2n3700ub Dose 2N3700 2N3019 DIE 2N3700 JAN 2N3019 2N3019S 2N3057A 2N3700 2N3700UB
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 11 November 2010. MIL-PRF-19500/391M 20 September 2010 SUPERSEDING MIL-PRF-19500/391L 15 January 2008 PERFORMANCE SPECIFICATION SHEET

2N3700 DIE

Abstract: JANKC2N3700 JANHCA2N3700 2N3019 DIE 2N3019 2N3019S 2N3057A 2N3700 2N3700UB JANHC2N3700
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 October 2002. INCH-POUND MIL-PRF-19500/391G 15 July 2002 SUPERSEDING MIL-PRF-19500/391F 26 March 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

2N2195

Abstract: 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2N736 2n2102 motorola 2N2297 motorola 2N3019 2N699
Contextual Info: 34 MOTOROLA SC -CDI0DES/0PT03- 6367255 MOTOROLA SC DE |t,3b72SS 0037=173 S | D IO D E S /O P T O 34C * SILICO N SM ALL-SIG NAL T R A N SISTO R DICE (continued) 37973 r-z-7-^ 2C21 02 DIE NO. — NPN LINE SOURCE — DSL7 D ¿St This die provides performance similar to that of the following device types:

pnp for 2n3019

Abstract: 2N3700 DIE 2N3700UB 2N3057 2N3019 2N3700 DIE GEOMETRY 2N3019UB 2N3019 DIE 2C3019 2N3019S
Contextual Info: Data Sheet No. 2C3019 Generic Packaged Parts: Chip Type 2C3019 Geometry 4500 Polarity PNP 2N3019, 2N3057 Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general

Contextual Info: D a ta S h e e t No. 2 C 3 0 1 9 SEMICONDUCTORS G e n e ric P a c k a g e d P a rts : Chip Type 2C3019 Geometry 4500 Polarity PNP 2 N 3 0 1 9, 2 N 3 0 5 7 Chip type 2C3019 by Semicoa Semi­ conductors provides performance similar to these devices. Product Summary:

MIL-S-19500

Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Contextual Info: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 LCC-3UB Pin 4 in LCC-3UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages

MOTOROLA 2N5179

Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
Contextual Info: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.

2n2222 h 331 transistors

Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.