2N368 Search Results

2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Contextual Info: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A

2N3683

Abstract: 2N6385 shockley diode 2N6383 2N6384
Contextual Info: 2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER

n-channel fet to-92

Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
Contextual Info: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685

Contextual Info: 2N3687 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A)500u I(G) Max. (A) Absolute Max. Power Diss. (W)25m¥ Maximum Operating Temp (øC)200þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

MRF9331

Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331

2N3686

Abstract: 2N3685 2N3687 2N3686 equivalent 2N3954A 2n3684 dual 2N3684 equivalent siliconix 2N3685 2N3684-7 2N3955A
Contextual Info: 2N 3687 2N3686 2N3685 2N3684 n-channel JFETs S . designed fo r S ilic o n ix Performance Curves NFA See Section 5 BENEFITS • Low Noise Am plifiers • Operates from High Supply Voltages BV q s S > 50 V ■ Choppers ■ Switches TO-72 See Section 7 * ABSOLUTE M AXIM UM RATINGS 25° C

2N3688

Contextual Info: 2N3688 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)30m Absolute Max. Power Diss. (W)500m’ Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)20

Contextual Info: 2N3685 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A)3.0m I(G) Max. (A) Absolute Max. Power Diss. (W)150m¥ Maximum Operating Temp (øC)200þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2N3684

Abstract: 2N3687 0DG02 2N3686 2N3685 X2N3684 X2N3685 X2N3686 X2N3687 12VDS
Contextual Info: 2N3684 - 2N3687 CA L O G I C CORP MAE D • 1044322 0DG02Ö7 3 B C 6 C N-ChannelJFET Low Noise Amplifier CORPORATION T -t 2N3684- 2N3687 ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise noted FEATURES • Low Noise • High Input Im pedance • Low Capacitance

Contextual Info: 2N3689 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)30m Absolute Max. Power Diss. (W)500m’ Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)20

2N3685

Abstract: 2N3684 2N3686 2N3687 X2N3684 X2N3685 X2N3686 X2N3687 TO72 package n-channel jfet
Contextual Info: 2N3684 - 2N3687 CALOGI C CORP 4âE D • 1344322 N-ChannelJFET Low Noise Amplifier DGG02Ö7 3 MCGC CORPORATION T-VÌ-Z.S 2N3684-2N3687 ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise noted FEATURES • Low Noise • High Input Im pedance • Low Capacitance

2N3687A

Contextual Info: 2N3687A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3687A Availability Online Store

2N3684 equivalent

Abstract: 2N3687 2N3684 2N3686 6BW6 2N3686 equivalent 2N3685
Contextual Info: 2N 3687 2N3686 2N3685 2N3684 n-channel JFETs S . designed fo r Siliconix Performance Curves NFA See Section 5 BENEFITS • Low Noise Am plifiers • Operates from High Supply Voltages BV q s S > 50 V ■ Choppers ■ Switches TO -72 See Section 7 * ABSOLUTE M AXIM UM RATINGS 25° C

Contextual Info: 2N3683 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition)

2N3680 transistor

Abstract: 2N2642 TE550 2N2920
Contextual Info: TYPE 2N3680 DUAL N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 7 2 1 1 6 8 7 , M A R C H 1 97 2 RECOMMENDED FOR D IFFER EN TIA L AMPLIFIERS • Featuring Matching and Tracking Improvements over 2N2453, 2N2642, and 2N2920 • Each Triode Electrically Similar to 2N2484 and 2N930

BF460

Abstract: BLY34 2n5213 2N3869 BLY33 motorola diode 2N3374 BF461 diode GG 14 G9090
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 20 OKS22 TS1134 KN100 2S01211 BF460 BF461 BF462 2N3374 ~~~~j: 25 30 2N3924 2S01228M 2S01228M 2N3118 2N3119 2SC259O 2N5421 2N3309 ~~~~:A 35 • 40 2N3684 2N3684 2N5213 2N5213 2N5213 2N3869 C3·28 BLY34 ~t~~:

MMBFJ202

Abstract: MBF5459 bf245b PN4303 MMBFJ201
Contextual Info: bflE ]> • JF E T General Purpose continued H h501130 0 0 3 ^ 6 NATL SEMICOND bTO * N S C S (DISCRETE) N Channel Vp % I b Device BVoss (V) M in (V) M in M ax m (mmho) CIss Crss (PF) (PF) M ax M ax M in M ax en @ F re q Package M ax (Hz) 2N3684 50 2 5

Contextual Info: ^TT^[L L O W P O W E R F IE L D EFFEC T T R A N S IS T O R S L@W M@0©i Type Number C ase Style ( T O - Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max (mA) Yos Max (uMhos) 2N3684

Contextual Info: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

rosemount 118mf

Abstract: OPTO MOS SWITCH OFM 2N5160 equivalent LT1001 KELVIN-VARLEY DIVIDER ultronix 105A 2n5160 OFM-1A 2N5160 ss LT301A
Contextual Info: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire

Q2T2905

Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
Contextual Info: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

2n2407

Abstract: 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 2N2453 Programmable unijunction
Contextual Info: IN T E X / SE M IT R Ô N IC S CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb Min. Max. 2N2060 2N2060A