2N2905
Abstract: TRANSISTOR 2n2905 2n2219a npn transistor 2N2219 2N2219A 2N2905A ST 2N2905 2n2905 philips 2N2905 2N2219 2N2905 2N2219 application
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching transistors
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m3d1112n29052n2905a2n2219+92n2219asca54117047/00/02/pp8transistor 2n29052n2219a npn transistorst 2n29052n2905 philips2n2905 2n22192n2905 2n2219 application
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2N2905
Abstract: 2n2905a 2N2905 2N2219 transistor 2N2905 2N2905 NPN transistor
Contextual Info: Philips Semiconductors Product specification PNP switching transistors FEATURES 2N2905; 2N2905A PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching
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2n22192n2219a2n29052n2905a+32n2905 2n2219transistor 2n29052n2905 npn transistor
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2n2907 Motorola
Abstract: motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application 2N2907
Contextual Info: MOTOROLA 2N2904A* thru 2N2907,A* PNP Silicon Annular Hermetic Transistors Designed for high–speed switching circuits, DC to VHF amplifier applications and complementary circuitry. COLLECTOR 3 • High DC Current Gain Specified — 0.1 to 500 mAdc • High Current–Gain — Bandwidth Product —
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2n2904a2n29072n2905a2n2907a+122n22192n22222n2904a/d2n2907 motorolamotorola transistor 2n2907a2n2905 motorola2n2905a motorolamotorola transistor 2n2907motorola 2n2905a2n2904a motorola2n2907a motorola2n2905 2n2219 application
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2n697
Abstract: 2N956 2N2905
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CEO h FE Coi Cob V CE(sat) h ^off PD PF MHz ns Ta 25°C MAX MIN MAX mW 250 285 800 3.0 TO-5
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2n2218a2n2221a2n28682n3110+82n21942n2194a2n2194b2n6972n697jan2n6962n9562n2905
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NPN C460
Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
Contextual Info: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25
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2n3724a2n3725a2n3244bf257+13bs93002n2219a2n22212n2222npn c4602n2907 equivalentc4962n2906 equivalent2n2905 equivalent2n2484 complementary2n2907 t018c735cv7496
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2N2219 2N2905
Abstract: BF177 BF178 BF338 bf179 BC312 BF337 BFT37 BF336 bc143
Contextual Info: Metal Can Complementary Pairs BV Case A M edium Current Am plifiers &• Sw itches Maximum ratin ps | Device Type Polarity Core Drivers b BV BV hFE1 CBO CEO EBO ICM HFE2 Ic fT min. Ic V V V mA mA min. max. mA min. max. M H z V C E sat) IC Max. ton Max.
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2n3724a2n3725a2n3244bf257+16bfq36bf257/8/9bfq372n22182n29042n2218a2n2219 2n2905bf177bf178bf338bf179bc312bf337bft37bf336bc143
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C495 transistor
Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250
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bf594bf194bf595bf195+10bf597bf1972n4996bs93002n2219ac495 transistorbf194 equivalentbf357bf195 equivalenttransistor c495
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BF178
Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+132n9182n42522n4253bfq36bf257/8/9bfq37bf178bf179bft79bf1772n2219 2n2905bf338bc325
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C495 transistor
Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra
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bcw35gpbs93002n2219a2n2221+132n22222n2221aft018c495 transistorc638 transistorequivalent transistor bc108c756 transistorpnp transistor 2n2222 equivalentc735 transistorc637 transistortransistor c495transistor bc107 current gainc372 transistor
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2n2484 complementary
Abstract: Metal 2n2222 2N2484 2N2222 DUAL TRANSISTORS IN TO77 PACKAGE 2N2222/2N2222 2N2222/2n2484 complementary
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUIV. PD (Total) ^FE V CEO SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484 45 2N2913
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md918md2218amd2219a2n2641+132n26442n29132n29142n29722n29732n30452n2484 complementarymetal 2n22222n24842n2222dual transistors in to77 package2n2222/2n22222n2222/2n2484 complementary
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DUAL TRANSISTORS IN TO77 PACKAGE
Abstract: 2N2222 Metal 2n2222 2n2484 complementary 2N4018 2N3800 2n2484
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUI V. PD (Total) hFE V CEO hFE @ SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484
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md918md2218amd2219a2n2641+132n26442n29132n29142n29722n29732n3045dual transistors in to77 package2n2222metal 2n22222n2484 complementary2n40182n38002n2484
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C495 transistor
Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra
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bcw35gpbs93002n2219a2n2221+132n22222n2221aft018c495 transistorc735 transistorc638 transistorc756 transistortransistor c495c644 transistorpnp transistor 2n2222 equivalenttransistor c735c637 transistortransistor c633
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2N3053 equivalent
Abstract: bf258 equivalent 2N2219 2N2905 BC107 equivalent transistors bc109 equivalent BF178 BC107 pnp equivalent BC177 equivalent bc303 f-002
Contextual Info: Metal Can Complementary Pairs Maximum ratin ps BV Case | Device Type Polarity Core Drivers BV BV CBO CEO EBO ICM V V V mA hFE1 Ic mA min. max. Ic mA HFE2 fT min. min. max. MHz VCE sat IC mA V 2N3724A NPN 2N3725A NPN T039 T039 50 80 30 50 6 6 1200 1200 100
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2n3724a2n3725a2n3244bf257+14bs93652n40362n4037bs33652n3053 equivalentbf258 equivalent2n2219 2n2905bc107 equivalent transistorsbc109 equivalentbf178bc107 pnp equivalentbc177 equivalentbc303f-002
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F13S
Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+142n9182n42522n4253high59bs9365f13sbfq35bc177 pnp transistortransistor bc303transistor t05bf1792n3440 equivalentbc304 equivalentbc143 equivalent
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2N2905 2N2219
Abstract: FT3904 2N1711A 2N295 2N33 2N2905 2N2222JAN 2N3135
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) h FE V CEO VcE(sat) <V C E R > VO LTS TYPE MIN 2N957 20 2N2959 hpE @ MIN - MAX 45 lc mA VOLTS @ lc
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2n9572n29592n31162im2958+142n31152n9162n7032n19862n21952n2195a2n2905 2n2219ft39042n1711a2n2952n332n29052n2222jan2n3135
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C736
Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+152n9182n42522n4253bs93002n2219ac736c495 transistorbc303 equivalent2n2222a 026c735bc143 equivalentbc143c644equivalent transistor 2n1711transistor c633
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2N3866 pin diagram
Abstract: CV7753 2N4429 BFS98 CV7644 ferranti 2N4041 ZT280 CV7371 CV7373
Contextual Info: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series
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zt80-zt180100maseries-zt180zt110-zt280+13cv7373cv7644cv7371cv7372zt183zt1842n3866 pin diagramcv77532n4429bfs98ferranti2n4041zt280
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2N2905 2N2219
Abstract: 2n2219 2N2219A Transistor 2N2219A UHF power TRANSISTOR PNP TO-39 2N2219A philips 2N2905A RS 2N2219 2N2905
Contextual Info: Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A FEATURES PINNING • High current max. 800 mA PIN • Low voltage (max. 40 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to case • High-speed switching
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2n22192n2219a2n29052n2905a+62n2905 2n2219transistor 2n2219auhf power transistor pnp to-392n2219a philips2n2905a rs2n2219 2n2905
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2N2222A zetex
Contextual Info: ZETEX S E M I C O N D U C T O R S IbE D • TTVDSTfl OOObfl4ö ñ ■ ZETB METAL CAN SPECIFICATIONS ~rz°i - Z 3 NPN LOW NOISE Type ZT91 ZT92 BSY55 ZT93 ZT86 ZT88 ZT89 ZT90 ZT95 BCY65E 2N2484 ZT94 ZT83 ZT84 BCY59 BCY56 2N930 2N2219A 2N2222A ZT81 ZT82 BCY58
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bsy55bcy65e2n2484bcy59+7bcy562n9302n2219a2n2222abcy58bsy512n2222a zetex
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SP2605F
Abstract: 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2N0718A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn
Contextual Info: Small Signal Transistors Small Signal Transistors Hermetic Seal Raytheon Semiconductor offers a wide variety of Industry standard and sole source high reliability (JAN, JANTX, Product 2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131"
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2n06572n06972n07062n0718a+142n0720a2n09102n09182n09302n11312n1132sp2605f2n2222a raytheonlow noise transistors rf2n40332n2907a raytheon2n065sp2605qfdual transistors" pnp npn
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2N4041
Abstract: 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80
Contextual Info: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series
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zt80-zt180100maseries-zt180zt110-zt280+13cv7373cv7644cv7371cv7372zt183zt1842n40412n4429bfs982n36322n4127j 2n2222azt80
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transistor t05
Abstract: TIS60m 2N1507 2N1613 2N1711 2N1889 2N1890 2N1893 2N696 2N697
Contextual Info: Case Type No. C onstruction see note 1 Silicon Transistors Maximum Ratings at25°C amb. SPEC IAL Characteristics FEATURES h hFE V CB V V CE V v EB V •c A 15 2 30 15 2 Min. Ptot W mA 0-2 10 50 20 0-2 10 50 20 Max. V CE(SAT) Min. mA 's mA Max. mA M c/s 200
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tixs12tixs131200t2n696+112n6972n6982n15072n16132n1711n3830transistor t05tis60m2n18892n18902n1893
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2N2894 FAIRCHILD SEMICONDUCTOR
Abstract: BC253C 2N4258 BC171 2N2907A FAIRCHILD SEMICONDUCTOR bc252b BC107 itt 2N3209 2N5023 BSX29
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P H igh Speed Saturated Sw itching Transistors M etal C a n T018, T 039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S M A X R A T IN G S
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bsx2935322h2n289435323f+13n2894a35324d2n320935325b2n502335326x2n2894 fairchild semiconductorbc253c2n4258bc1712n2907a fairchild semiconductorbc252bbc107 itt
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BF177
Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20
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bft39bft40bft41bft29+15bft30bft31bfy50bfy51bfy52bft53bf177bc312bf178bf1792n4260bc1422n35762n3829bf338
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