2N240 Search Results

2n2405

Abstract: 2N1893
Contextual Info: 4302271 üün7ô3 4 HHAS P o w e r Tran sistors File N u m b e r 34 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 I ' 3 3 - 0 5 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p p lic a tio n s In In d u strial and C o m m e rc ia l E q u ip m e n t

2N2405

Contextual Info: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89 max.

2N2405

Abstract: transistor 1150
Contextual Info: 2N2405 Medium Power Silicon N-P-N Planar Transistor. 11.50 Transisto. 1 of 1 Home Part Number: 2N2405 Online Store 2N2405 Diodes M edium Po w er Silic o n N- P- N Planar Trans is to r. Transistors Enter code INTER3 at

Contextual Info: m 2N2405 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. MAXIMUM RATINGS 1.0 A lc 90 V V ce P d is s 1.0 W @ TA = 25 °C P d is s 5.0 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C

2N2405

Contextual Info: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89 max.

Contextual Info: 2N2405 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2405 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE

Contextual Info: 2N2403 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.20 h(FE) Max. Current gain.60

2N2405

Abstract: C2035
Contextual Info: ÀSII 2N2405 SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A Vc e 9O V pd is s 1.O W @ Ta " 25 0C pd is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C

2SC1018

Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252

Contextual Info: ., fine. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) FEATURES • For Operation at Junction Temperature up

TIP290

Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
Contextual Info: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001

germanium transistor pnp

Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
Contextual Info: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies

2SA144

Abstract: 2N2416 Low-Power Germanium PNP 2G309 OC45 2SA144 to-92s GT1606 ac107
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number -10 TR64 2N964A GT1606 GT1606 2SA156 OC45 2SA201 NKT143 NKT144 OC43N ~~~~g 15 20 2G345 2G345 2N2401 2N779 2N779A MA113 MA113 MA116 ~~~d: 25 30 NKT261 NKT271 2SA202 2SA202 2N606 2SA160 AC107 AC107 ~~~~1 35 40

2N2405

Abstract: 2N1893 transistor KD 503 RCA-2N2405 kd 503 transistor TA2235A RCA-ZN1893 TA2235
Contextual Info: G E SOLID STATE 3875081 □ 1 G E S O LI D S TAT E DE I 3Ö7SDÖ1 GD17CHE 5 | ~ 01E 17092 D -T -2 J-Z 3 _mgn-speea rower Transistors File N u m b e r 3 4 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p plic a tio n s

Contextual Info: 2N2401 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)1.5u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.50 h(FE) Max. Current gain.

Contextual Info: 2N2405 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)150m

Contextual Info: 2N2405S Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

Contextual Info: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max

TO-39 1000 V

Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

bc140

Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,

bc140

Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

2N2398

Abstract: 2N1745 2N1300 2N1748A 2N2360 2N1728 2n1749 2N2362 2N128 2N1742
Contextual Info: SPRAGUE M A D T , M A T R, and SBT Germanium Transistors MADT PNP GERMANIUM TIANSISTORS FOR COMMUNICATION APPLIOWONS C H A R A C T E R I S T IC S J u n c tio n M a x. M in M in . •CBO T yp. Cob r b 'C c PG @ m A h FE (p F ) (p se c ) Lax (M H z ) M A X I M U M R A T IN G S