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    2N1711 COMPLEMENT Search Results

    2N1711 COMPLEMENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CD4041UBE
    Texas Instruments CMOS quad true/complement buffer 14-PDIP -55 to 125 Visit Texas Instruments Buy
    CD4041UBF
    Texas Instruments CMOS quad true/complement buffer 14-CDIP -55 to 125 Visit Texas Instruments
    CD4041UBM96
    Texas Instruments CMOS quad true/complement buffer 14-SOIC -55 to 125 Visit Texas Instruments Buy
    CD4041UBF3A
    Texas Instruments CMOS quad true/complement buffer 14-CDIP -55 to 125 Visit Texas Instruments Buy
    CD4041UBM
    Texas Instruments CMOS quad true/complement buffer 14-SOIC -55 to 125 Visit Texas Instruments Buy

    2N1711 COMPLEMENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RCA1A18

    Abstract: 2N3265 rca 40408 RCA1A17 40409 rca RCA 40409 40317 2n3053A complementary rca 40407 RCA 40389
    Contextual Info: High-Speed-Switching n-p-n and p-n-p Type Selection Charts h V CEO sus V CER <sus) V V C E V F E * » at V (sus) = 10 V Current—mA V V C E ICBO - M A Temp.-°C 0.01 10 50 V 150 1000 500 2N2102 FAMILY (n-p-n) General Purpose, Complementary to 2N4036 Family


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    2n21022n4036o-39/to-205md2n697+162n16132n17112n30532n22702n6992n3053arca1a182n3265rca 40408rca1a1740409 rcarca 40409403172n3053a complementaryrca 40407rca 40389 PDF

    motorola 2N2270

    Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
    Contextual Info: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.


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    h3b7e54007b70e2n28962n3700+162n28952n9562n28972n7182n2221a2n2222aimotorola 2n22702n39472n956 motorolajan 2n2896transistor motorola 2n3053motorola 2n2270 to-18mm3904motorola 2n22192n4028mm6427 PDF

    CV7756

    Abstract: bc300 equivalent BFY50 equivalent 2N2222 npn small signal current gain BC142 equivalent CV7765 bfy51 equivalent CV7735 cv7766 2n1613 equivalent
    Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s Absolute Maximum Rating h F E at Collector Current CV Number Commercial Case Equivalent Outline Polarity V C B VCE V V V e b hFE hFE Ic Min. fT MHz Converted to B S 9 3 0 0 Small Signal Planar CV continued


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    cv7722bfy50cv7723bfy51+14cv7724bfy52cv7725cv7726cv7756bc300 equivalentbfy50 equivalent2n2222 npn small signal current gainbc142 equivalentcv7765bfy51 equivalentcv7735cv77662n1613 equivalent PDF

    Contextual Info: ZETEX SEMICONDU.CTORS lt>E D • T c170S7fl 00Db6M5 5 ■ ZETB METAL CAN SPECIFICATIONS _ T-2PI - NPN LOW LEVEL Type V CB VcEO M ax. V CE Mt at Max. •c h FE at Min. M ax. MHz »C mA P.o, a t T iunb =25°C mW Package Complement V le mA 1000 1.2 200 20 65


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    170s7fl00db6m5bsy95add0bfl51 PDF

    BFY50 equivalent

    Abstract: 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti
    Contextual Info: Discrete Semiconductors T exas In s t r u m e n t s Absolute Maximum Rating hFE at Collector Current CV Number Commercial Case Equivalent Outline Polarity VC B VCE V eb hFE V V V hFE Ic Min. fT MHz Converted to BS9300 Small Signal Planar CV continued Comments


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    cv7722bfy50cv7723bfy51+14cv7724bfy52cv7725cv7726bfy50 equivalent2n2222 texas instrumentscv7756bfy51 equivalentcv7735bfy52 equivalentequivalent of 2n22222n2222 npn small signal current gain2n2222 equivalent 2n24842n2222 ti PDF

    TEA7052DP

    Abstract: ls285ab TEA7531DP 7532DP M3541B LS285AB1 LS588N TEA7063DP LS256B pnp for 2n3019
    Contextual Info: TELEPHONE SET RECOMMENDED PRODUCTS FROM SGS-THOMSON SPEECH CIRCUITS Type Number L3280AB LS256B PROTECTION Description Very low voltage telephone speech circuit Telephone speech circuit with multifrequency interface Telephone speech circuit Programmable telephone speech circuit


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    l3280abls256bls285ab1ls588n1+12ls656abtea7052dptea7063dpl3100b1ls5120bls5060bls285abtea7531dp7532dpm3541bls588npnp for 2n3019 PDF

    tea7531dp

    Abstract: TEA7052DP 2N1711 smd 7532DP M3541B LS285AB1 TEA7531 TEA7531D TDA2320AN TEA7063DP
    Contextual Info: TELECOM RECOMMENDED PRODUCTS FROM SGS-THOMSON SPEECH CIRCUITS Type Number L3280AB LS256B LS285AB1 LS588N1 LS656AB TEA7052DP TEA7063DP PROTECTION Description Very low voltage telephone speech circuit Telephone speech circuit with multifrequency interface Telephone speech circuit


    Original
    l3280abls256bls285ab1ls588n1+13ls656abtea7052dptea7063dpst24c04b1st93cs56b1l3100b1tea7531dp2n1711 smd7532dpm3541btea7531tea7531dtda2320an PDF

    NPN C460

    Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
    Contextual Info: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25


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    2n3724a2n3725a2n3244bf257+13bs93002n2219a2n22212n2222npn c4602n2907 equivalentc4962n2906 equivalent2n2905 equivalent2n2484 complementary2n2907 t018c735cv7496 PDF

    RCA 40409

    Abstract: rca1a18
    Contextual Info: High-Speed-Switching n-p-n and p-n-p Type Selection Charts h V CEO sus V CER <sus) V V C E V F E * » at V (sus) = 10 V Current—mA V V C E ICBO - M A Temp.-°C 0.01 10 50 V 150 1000 500 2N2102 FAMILY (n-p-n) General Purpose, Complementary to 2N4036 Family


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    2n21022n4036o-39/to-205md2n697+82n16132n17112n30532n22702n6992n3053arca 40409rca1a18 PDF

    2n697

    Abstract: 2N956 2N2905
    Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CEO h FE Coi Cob V CE(sat) h ^off PD PF MHz ns Ta 25°C MAX MIN MAX mW 250 285 800 3.0 TO-5


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    2n2218a2n2221a2n28682n3110+82n21942n2194a2n2194b2n6972n697jan2n6962n9562n2905 PDF

    40409

    Abstract: 40361 40317 40314 40323 2n2102 2n697a 40311 40407 40814
    Contextual Info: 2N2102 FA M ILY [n-p-n] silicon f r = 120 MHz min; Py = 5 W max V R E (s a t)- V V p p (ia t)- V DESCRIPTION V C E O (sus) 2N TYPES V V V Tem p. -°c Curren t- m A V C E R<»U*) V C E V (sus) 0.01 0.1 10 50 150 - - - 'c 'C B •c 'b mA mA 1.5 150 15 1.3


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    2n21022n6972n6992n1613+122n17112n18932n305340409403614031740314403232n697a403114040740814 PDF

    transistor 40409

    Abstract: 40409 Transistor 40408 transistor 40409 TRANSISTOR 40389 2n2102 class ab audio amplifier circuit transistor 2n3055 40409 silicon 300W TRANSISTOR AUDIO AMPLIFIER 40361
    Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


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    2n62922n61112n54952n6269+132n40362n6386ta82012n2102transistor 4040940409 transistor40408 transistor40409transistor 40389class ab audio amplifier circuit transistor 2n305540409 silicon300w transistor audio amplifier40361 PDF

    SP2605F

    Abstract: 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2N0718A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn
    Contextual Info: Small Signal Transistors Small Signal Transistors Hermetic Seal Raytheon Semiconductor offers a wide variety of Industry standard and sole source high reliability (JAN, JANTX, Product 2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131"


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    2n06572n06972n07062n0718a+142n0720a2n09102n09182n09302n11312n1132sp2605f2n2222a raytheonlow noise transistors rf2n40332n2907a raytheon2n065sp2605qfdual transistors" pnp npn PDF

    transistor t05

    Abstract: TIS60m 2N1507 2N1613 2N1711 2N1889 2N1890 2N1893 2N696 2N697
    Contextual Info: Case Type No. C onstruction see note 1 Silicon Transistors Maximum Ratings at25°C amb. SPEC IAL Characteristics FEATURES h hFE V CB V V CE V v EB V •c A 15 2 30 15 2 Min. Ptot W mA 0-2 10 50 20 0-2 10 50 20 Max. V CE(SAT) Min. mA 's mA Max. mA M c/s 200


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    tixs12tixs131200t2n696+112n6972n6982n15072n16132n1711n3830transistor t05tis60m2n18892n18902n1893 PDF

    ZTX651

    Abstract: ZTX692B ZTX650 ZTX652 ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860
    Contextual Info: TABLE 8 : NPN/PNP SUPER E-LINE TYPES These devices offer the ultimate performance for TO -9 2 style package. They have been designed to operate and provide useful gain at current levels up to 6 A with power dissipation capabilities in excess of 1W at 2 5 ° C ambient temperature.


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    ztx6535ztx753ztx652ztx752+8ztx651ztx751ztx650ztx750ztx6495ztx749ztx692bscans-00107860 PDF

    2n222a

    Abstract: CV7644 ZTX326 2n3600 CV7371 CV7373 ZT80 ZT83 ZT1481 ZT86
    Contextual Info: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3


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    zt80-zt180100maseries-zt180zt110-zt280+13cv7373cv7644cv7371cv7372zt183zt1842n222aztx3262n3600zt80zt83zt1481zt86 PDF

    BC337B

    Abstract: BFS98 ZTX338 ZTX452 MPSA06 ZTX451 ZTX454 ZTX551 ZTX552 ZTX553
    Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Sw itching, etc.


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    1000mwztx4555ztx555ztx454+11ztx554ztx453sztx553ztx452ztx552mpsa06bc337bbfs98ztx338ztx451ztx551 PDF

    NPN pnp MATCHED PAIRS 2n2905A 2N2219A

    Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
    Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW


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    bs93652n40362n4037bs3365+122n40302n4031npn pnp matched pairs 2n2905a 2n2219abfr39bfr80bfr40bs9300bfr81bc326bfr79tis90bfr62 PDF

    2N4260

    Abstract: F012 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV BV BV Case hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75


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    bft39bft40bft41bft29+8bft30bft31bfy50bfy51bfy52bft532n4260f012 PDF

    2N222A

    Abstract: ZT1702 N2222 ZT1483 ZT1701 2N2270 equivalent 2n3600 ZT280 ZT1482 CV7373
    Contextual Info: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series


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    zt80-zt180100maseries-zt180zt110-zt280+15cv7373cv7644cv7371cv7372zt183zt1842n222azt1702n2222zt1483zt17012n2270 equivalent2n3600zt280zt1482 PDF

    BUL 128 A

    Abstract: RCA1A18 2n3053A complementary 40317 2N3053A
    Contextual Info: • w, ■fft ■ ■ ■ . -.X ■ ■ V• - Power Transistors High-Speed-Switching n-p-n and p-n-p Type Selection Charts I CBO —juA Temp.—°C hF E * * at V C E = 10 V V CEO sus V CER (sus) V CEV (sus) v Current—mA V V 0.01 10 0.1 2N2102 FAMILY (n-p-n) General Purpose,


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    2n21022n4036o-39/to-205md2n697+102n16132n17112n30532n22702n6992n3053abul 128 arca1a182n3053a complementary40317 PDF

    C495 transistor

    Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
    Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra


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    bcw35gpbs93002n2219a2n2221+132n22222n2221aft018c495 transistorc735 transistorc638 transistorc756 transistortransistor c495c644 transistorpnp transistor 2n2222 equivalenttransistor c735c637 transistortransistor c633 PDF

    BC142 equivalent

    Abstract: BC302 equivalent BF337 2N3440 8c BF259 2N3440 COMPLEMENTARY 2N3829 bf258 equivalent 2N4260 BFT39
    Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


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    bft39bft40bft41bft29+15bft30bft31bfy50bfy51bfy52bft53bc142 equivalentbc302 equivalentbf3372n3440 8cbf2592n3440 complementary2n3829bf258 equivalent2n4260 PDF

    C495 transistor

    Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
    Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250


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    bf594bf194bf595bf195+10bf597bf1972n4996bs93002n2219ac495 transistorbf194 equivalentbf357bf195 equivalenttransistor c495 PDF