2N1613 ST Search Results

2n1613

Contextual Info: 2N1613 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integra. Page 1 of 2 Enter Your Part # Home Online Store Special Offers: 2N1613 Availability FREE UPS Ground Shipping on Orders above $150.00 Buy 2N1613 at our online store!

2N1613

Abstract: 2N1711
Contextual Info: NPN 2N1613 – 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits.

Contextual Info: rm. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA DESCRIPTION 2N1613 2N1711 2N1893 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-6960 NPN Silicon Transistor JEDEC TO-39 case 2N1613, 2N1711, and 2N1893 are S i l i c o n NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications.

equivalent transistor 2N1711

Abstract: J 2N1711 2N1711 Data Sheet 2N1613 2N1711 N1711 2n1613 equivalent 2N1613 Data Sheet 2N1613-2N1711
Contextual Info: 2N1613 2N1711 SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers

Contextual Info: 2N1613 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE

RCA-2N2102

Abstract: 2n2102 2N1613 2n2102 replacement rca 2n2102 si2666 2n1613 replacement transistors BC 457
Contextual Info: SOLID STATE Dl DE I 3fl7SDÖl H igh Speed Pow er Transistors- 2N1613, 2N2102 Medium-Power Silicon N-P-N Planar Transistors \ y ^ Z7~f? = - 0017007 T File Number 106 TER M IN AL DESIGNATIONS For Small-Signal Applications

transistor 2n1613

Abstract: 2N1613 2n1613 st BP317 1na120
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1613 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 11 Philips Semiconductors Product specification NPN medium power transistor

2N1613

Abstract: 2N718A transistor 2N1613 2N1613 Data Sheet 2N1613L
Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 Devices Qualified Level JAN JANTX JANTXV 2N1613 2N1613L 2N718A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

2N1613

Abstract: 2N718A 2N1613L
Contextual Info: TECHNICAL DATA 2N718A JAN, JTX, JTXV 2N1613 JAN, JTX, JTXV 2N1613L JAN, JTX, JTXV MIL-PRF QML DEVICES Processed per MIL-PRF-19500/181 LOW-POWER NPN SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2N1613

Abstract: X10-4 RS510
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCER Collector Emitter Voltage (RBE<10Ω)

2N1613

Abstract: max7550
Contextual Info: Philips Semiconductors Product specification NPN medium power transistor 2N1613 FEATURES PINNING • Low current max. 500 mA PIN • Low voltage (max. 50 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching and amplification.

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

2n1613

Abstract: 2N718A 2N1613L 2N1613 JANTX
Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 Devices Qualified Level JAN JANTX JANTXV 2N1613 2N1613L 2N718A MAXIMUM RATINGS Ratings Symbol Value Unit VCEO VCBO VEBO IC 30 75 7.0 500 Vdc Vdc Vdc mAdc Collector-Emitter Voltage

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

MIL-S-19500

Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Contextual Info: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S

2N2102

Abstract: 2n1613 replacement rca 2n2102 2n2102 replacement RCA-2N2102 2N1613 iz667
Contextual Info: SOLID STATE High Speed Power Transistors 01 DE i3f l75Döl 0017007 , | ~r '' Z 7 '~r? , 2N1613, 2N2102 - File Num ber Medium-Power Silicon N-P-N Planar Transistors 106 TE R M IN A L D E SIG N A TIO N S For Sm all-Signal Applications in Industrial and Comm ercial Equipment

2N1613

Abstract: MAX244 2N1711
Contextual Info: 2N 1613 2N 1711 NFN SILICON PLANAR EPITAXIAL TRANSISTORS CASE TQ-39 THE 2N1613 AND 2N1711 ARE NFN SILIC ON* PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR SWITCHING AND D.C. AMPLIFIERS. C E B ABSOLUTE MAXIMUM RATINGS wm Collector-Base Voltage VCBO 75V Collector-Hnitter Voltage RBE^10/l

2N1613

Abstract: X10-4 RS510
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCER Collector Emitter Voltage (RBE<10Ω)

2N1711

Abstract: 2N1613 2M1711 transistor 2N 238 2n 1711
Contextual Info: 2N1613 2N 1711 SILICON PLANAR NPN SWITCHES A N D U N IV ER SA L A M PLIFIER S The 2N 1613 and 2N 1711 are silicon planar epitaxial NPN transistors in Jedec T O -3 9 metal case. They are designed fo r use in high perform ance am plifier, oscillator and switching

2N1613

Abstract: 2N1893 2N1711 transistor 2N1711 75 watt npn switching transistor
Contextual Info: Datasheet 2N1613 2N1711 2 N 18' Central Semiconductor Corp. NPN Silicon Transistor 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 1613 » 2N1711, and 2N1893 are Silicon NPN Planar Epitaxial

2N1711

Abstract: 2N1613 "2N1711"
Contextual Info: 3QE D • 7^237 ÜD311D3 7 ■ f Z 7 SGS-THOMSON m 7 # MD@fô [i[Li m «§ “ T T ^ - t h o m s o n 2N1613 2 N 1711 ^ SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTIO N The2N1613and2N1711aresiliconplanar epitaxial NPN transistors in Jedec TO-39 metal case. They

Contextual Info: TYPES ¿Nfnifi ? n m . vNv.ii / f u m m m U i i , 2N1613, j n t j h N-P-N SILICON TRANSISTORS n z 1} B U L L E T IN NO. D L-S 693471, M A Y 1 9 6 3 - R E V I S E D A U G U S T 1969 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for