2N 525 Search Results

KSD 166

Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

2N6016

Abstract: 2N5816 2N3856 2N3638A 2N5822 2N6000 2N6002 GET3014 GET3638 GET706
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4

2N6008

Abstract: 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4

TCA 875 IC

Abstract: 2N5867 am 5869
Contextual Info: T Y P E S 2N5867. 2N5868 P-N-P S IN G LE-D IF F U S ED S IL IC O N POWER T R A N S IST O R S TYPES 2N5867, 2N 5868 BULLETIN NO. D L -S 7111592, DECEMBER FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING APPLICATIO N S D ESIG NED FOR C O M P LE M E N TA R Y USE W ITH 2N 5869, 2N 5870

BTW48-600

Abstract: 10-32 UNF 2N681 2N682 2N683 2N685 2N687 2N688 2N689 2N690
Contextual Info: S ê s g s th o m s o n GENERAL PURPOSE & INDUSTRIAL ^ 7 # M0ÊlE IlLICTl 3 lM0(gi MEDIUM POWER THYRISTORS & TRIACS < 100 A STANDARD THYRISTORS METAL CASE Tamb = 25-C Type •o V RRM ■t s m 'RM @ VRRM >DM @ V DRM See NOTE (A) 7.4 Arms / Tcase = 90°C 2N 1770— 2N 1778

n3904

Abstract: NPN transistor 2n 3904 NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E M ax. @ l c (m A) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 N ceo Ic PACKAGE DEVICE sus (max) TYPE VOLTS AMPS hFE@ L / ^CE (min/max @ A/V) ^CE(sat) @ I c^ b (V @ A/A) * D* fT p WATTS (MHz) N PN 2N 3265 90 20 25-55@ 15/2 1@ 20/2 100 20 TO -63 2N 3266 60 20 20-80@ 15/3

2n4125 equivalent

Abstract: 2N3904 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 2N3903 2N3905 NPN+2n3904 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24

NPN switching transistor 2N4403

Abstract: NPN transistor 2n 3904 transistor 2N 3904 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24

2N3055 TO-220

Abstract: 2N3055, TO5 complementary-pair 2N3055 TO-3 40250 BUX66C 2N3054 2N5293 BFT19B 2N5495
Contextual Info: COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base 1.5 o 2 A \r = 2 .5 A U P-N-P N-P-N l„ 3 t o 3.5 A N-P-N P-N-P N-P-N P-N-P N-P-N L 4 to 6 A w L 121 o 17 A N-P-N * P-N-P P-N-P 2N5293 2N5294 2N6106 2N6107 2N5786 2N 5783 2N3054 2N5955 2N5495 2N 5494

bdx 540

Abstract: 2N3440 BUY71
Contextual Info: ptot T g = 25 OC T C = 100 OC Typ type W VCEO min 'C D max V A B U Y 70 A B U Y 70 B BUY 70C 75 75 75 1000* 800* 500* 10 10 10 B U Y 71 40 2200* 2 B D X 31 B D X 32 40 40 2200* 1700* 4 4 rtiin hF E max « tc A 15 15 15 1,0 1,0 1,0 2N 3439 2N 3440 Siehe Datenblatt Seite 2-301;

merrimac Hybrid Couplers

Contextual Info: QHD-2N-0.56G QUAD HYBRID REV: 003, 06/16/06- TECHNICAL DESCRIPTION FEATURES • 450 - 700 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • HIGH POWER HANDLING • SURFACE MOUNT APPLICATIONS • CDMA 450 BASE STATION POWER AMPLIFIERS

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

ZNA234

Abstract: ZNA234E Msi device* zna234 mixing video vertical diagram circuit diagram video receiver
Contextual Info: MSI/LSI, DIGITAL, DIGILIN & LINEAR CIRCUITS TV CROSSHATCH GENERATOR ZNA234E The 2N A 234 integrated circuit makes available all the waveform s necessary to produce crosshatch, dot and greyscale test patterns on a television screen. A ll th a t is required is a 2 -5625 MHz crystal

G3PB-245B-2N/2H-VD

Contextual Info: Solid State Contactors New Heat Sink Construction G3PB-2N/-3N CSM_G3PB-2N_-3N_DS_E_2_1 Space and working time saved with new heat sink construction. Series now includes 480-VAC models to allow use in a greater range of applications. • A comprehensive lineup that now includes 480-VAC models.

2N539

Abstract: 2N539A mil-std-750 3076 Germanium power
Contextual Info: M IL -S-19500/38C 10 January 1969 SUPERSEDING MIL- S -19500/38B 31 January 1962 See 6 .3 . MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER T V P R S 9.NR3Q A N n 2N 5SQ A This specification is mandatory for use by all Depart­

2N918

Abstract: 2N917 schema GP 300
Contextual Info: 2N 917 *2 N 918 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLAN A R E P IT A X IA U X H* Preferred device D is p o s itif recommandé • VH F amplification small signal A m p lifica tio n VHF petits signaux - Mixerand oscillator applications

SDT96905

Abstract: SDT14304 TO114
Contextual Info: Solitron Devices Page 1 of 2 Switchtron Power Transistors Device Type Polarity V 1 CEO C sus (Peak) VOLTS AMPS h FE MIN/ MAX @ 1C AMPS V CE (sat) MAX @ IC AMPS 1TMHz MIN. PT(W) MAX. tf micro sec. @ 1C AMPS Case Type 2N 6546 * NPN 300 30 10/ 60 5.0 1.50 10.0

2n3904 418

Abstract: 2N3905 Equivalent 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

2N3819 equivalent

Abstract: MPF111 2N3821-4 2N5457-9 MPF109 2N5556-58 2N4220-2 2N4223-24 2N3819 U401-6
Contextual Info: Siliconix . Perform ance Curves NRL See Section 5 2N5458 designed fo r • General Purpose Amplifiers ■ Switches • 2N5457 2N 5459 s n-channel JFETs •A B S O L U TE M A X IM U M R A TIN G S 25°C TO -92 See Section 7 BEN EFITS Low Cost • Automated Insertion Package

BDX14

Abstract: BDX 14
Contextual Info: * BDX 14 PNP SILICON TRANSISTORS, EPITAXIAL BASE TR A N SIS TO R S PNP S IL IC IU M , BASE E P IT A X IE S Compì, of 2N 3054 ^P re ferred device D isp o sitif recommandé - LF large signal power amplification A m plification B F grands signaux de puissance

2n4125 equivalent

Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

2N3906 JEDEC

Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150