2N 394 Search Results

2n3901 equivalent

Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN

2N3900A

Abstract: 2N3900A equivalent 2N3404 2N2924 equivalent n3860 NTE377 2N2711 2N2712 2N2713 2N2923
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E b v CEO Device Type @ 10m A V V CE hF E M in.-M ax. @ I c , V 2N 2 7 1 1 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391

IC 4020

Abstract: 4023 IC IC 4023 2N4023 4020 ic 4024 2N4024 2n4021 2n 394 2N4025
Contextual Info: 2N 4020 to 25 SILICON PLANAR PNP DUAL, H IG H -G A IN , ILOW-IMOISE AM PLIFIERS The 2N 4020, 2N 4021, 2N 4022, 2N 4023, 2N 4024 and 2N 4025 are six term inal devices containing two isolated silicon planar epitaxial PNP transistors in Jedec T O -7 7 metal case.

BSTB0246

Abstract: BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D
Contextual Info: MANUFACTURERS T E C H N IC A L DATA SHOULD TAG nearest Equivalent Type TAG nearest Equivalent Type AA AA AA AA AA 107 108 109 110 111 2N 2N 2N 2N 2N BRX BRY BRY BRY BRY 66 54-100 54-200 54-300 54-400 BRX TAG TAG TAG TAG 66 611-100 611-200 611-300 611-400 AA

scr 106d

Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr Data S heet No. 2N 5237 1 1 I I ^88888 % # 1 $ id L SEMICONDUCTORS G e n e ric P a rt N u m b e r: 2N 5237 Type 2N5237 G eom etry 3111 P olarity NPN Q ual Level: JAN - JA N TXV

c 5296

Abstract: on 5296 2N5296 2N5294 ci 7411 2n 397 2n 394 esm 200 2n5298 w15C
Contextual Info: NPN S ILICO N T R A N S IS T O R S , H O M O B A S E S 2N 5294 TRANSISTORS NPN S ILIC IU M , HOMOBASES 2 |\J 5 2 9 6 2N 5298 Com pì, of ESM 1 3 2 ,1 3 3 ,1 3 4 Com plementary power am plification stages A m p lifica tio n de puissance à symétrie complémentaire

393A

Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
Contextual Info: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440

QHDZ-2N-0.45G

Abstract: MONOLITHIC AMPLIFIERS 380 transistor base station receiver
Contextual Info: QHDZ-2N-0.45G QUAD HYBRID REV: 004, 06/15/06 TECHNICAL DESCRIPTION FEATURES • 380 - 520 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • HIGH POWER HANDLING • SURFACE MOUNT APPLICATIONS • CDMA 450 BASE STATION POWER AMPLIFIERS

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr Data S heet No. 2N 4150 o % #f 1 l $ I c I ^88888 id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N4150 Type 2N4150 Geometry 9201 Polarity NPN Qual Level: JAN - JANTXV

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr Data S heet No. 2N 4150S o % #f 1 l $ I c I ^88888 id L SEM ICO N D U CTO RS G eneric Part Num ber: 2N4150S Type 2N4150S G eom etry 9201 P olarity NPN Q ual Level: JAN - JA N TXV

2n4035

Abstract: 10Vf 5mA150
Contextual Info: 30E » 7^2^237 GQ31211 T w # SCS TH O M S O N V # G*^@ [iLi gT[R}(5 K S ' - ( 3 2N 4035 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTIO N The 2N4035 is a silicon planar epitaxial PNP tran­ sistors in Jedec TO-18 metal case, primarily inten­

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 B O A R D M O U N T, 1ST A N D 2N D L E V E L S T A C K IN G C O N N E C T O R S Board Mount 1.5 mm2 Solid Wire w/lnterlock 5.0 mm Centerline, 1st and 2nd Level, Stacking Color-Gray UL R a tin g -300 V, 13.5 A

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

2sd 5023

Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

BCM 4359

Abstract: transistor 4287 AB transistor 3901
Contextual Info: 6091788 MICRO ELECTRONICS CORJP_ ña 82D 006^8 DEI bCm 7flfl D 7^* D 0 0 Gb 4 fl □ "7 J " TYPE V C E SA T FE C ASE Pd (mW) 'c (mA) V CEO (V) min max 'c (mA) max (V) ‘c (mA) fT min (MHz) Cob N.F. max max (pF) (dB) 3694 4249 4250 5138 N P P P T O -92A

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

Contextual Info: MICRO ELECTRONICS LTD SIE D • bDTlVèfl DOOlOTb ETS ■ MEHK Low Level and General Purpose Amplifiers TYPE NO. P O L A R IT Y T-27-01 CASE H M A X IM U M R A T IN G S Pd mW 'c (m A) V CEO (V ) min V C E (S A T ) FE max 'c (m A) V CE (V) max (V) 'c (m A)

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T