2N 1711 Search Results

TT 2222 npn

Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
Contextual Info: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904

2N1613

Abstract: 2M1711 2N1711 high gain low noise 2n
Contextual Info: 2N 1613 2N 1711 SILICON PLANAR NPN SWITCHES AND U N IV ER SA L A M PLIFIERS The 2N 1613 and 2N 1711 are silicon planar epitaxial NPN transistors in Jeclec T O -3 9 metal case. They are designed for use in high performance am plifier, oscillator and switching

4856a

Abstract: Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92
Contextual Info: SEMICONDUCTORS INC DTE D | 013bbSD □□□D3G7 S | N-Channel Junction Field Effect Transistors GENERAL PURPOSE MAXIMUM RA TIN G S TYPE NO. C A SE BC BC BC BC 264A 264B 264C 264D BF BF BF BF BF BF 2N 2N 2N 2N 2N Yfs mmhos •d s s (mA Pd (mWI bvg ss (V)

TN1613

Contextual Info: nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VBH Drv.ce Polar Can 25 «C W max mA 2N 1470 2N IbOJ TN 1564 7N 1S6S 7N 1565 A 2N 1S66 Tit I566A 2N157T 2N t573 TN 1574 TN 1613 TN1711 7N 1711 A 7N 1889 TN IB9O IK 1893 TN 1983 ?N 1990 TN 1990 « 7N 1990S

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 T O -5 TO 205A D t ri T O -3 9 20 @ W ^C m in /m a x D E V IC E su s Ic (m a x ) TYPE VOLTS AM PS @ m A /V 2N 697 40h 0 .8 4 1 0 /1 2 0 @ 150/10 2N 1711 50h 1.0 2N 1613 50h 2N 1893

2N1711

Abstract: 2N1613 2M1711 transistor 2N 238 2n 1711
Contextual Info: 2N1613 2N 1711 SILICON PLANAR NPN SWITCHES A N D U N IV ER SA L A M PLIFIER S The 2N 1613 and 2N 1711 are silicon planar epitaxial NPN transistors in Jedec T O -3 9 metal case. They are designed fo r use in high perform ance am plifier, oscillator and switching

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

2N1613

Abstract: MAX244 2N1711
Contextual Info: 2N 1613 2N 1711 NFN SILICON PLANAR EPITAXIAL TRANSISTORS CASE TQ-39 THE 2N1613 AND 2N1711 ARE NFN SILIC ON* PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR SWITCHING AND D.C. AMPLIFIERS. C E B ABSOLUTE MAXIMUM RATINGS wm Collector-Base Voltage VCBO 75V Collector-Hnitter Voltage RBE^10/l

BFY 34 transistor

Abstract: transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV
Contextual Info: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new development NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.

Contextual Info: 2N 1613 2N 1711 NBi SILICON PLANAR EPITAXIAL TRANSISTORS 1 CASE TO-39 IP ffi THE 2N1613 AND 2N17I1 ARE NÎN SILICON*PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR SWITCHING AND D.C. AMPLIFIERS. C E B ABSOLUTE MAXIMUM RATINGS C o lle c to r - B a s e V o lta g e

BFY34

Abstract: BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B
Contextual Info: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new development NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are double-diffused planar NPN silicon R F-transistors in a case 5 C 3 DIN 41873 (TO-39). The collector is electrically connected to thecase.

2N1111

Abstract: 2N1711 2N1613 01aa
Contextual Info: 2N 1613 2N 1711 NBi SILICON PLANAR EPITAXIAL TRANSISTORS 1 CASE T 0 -3 9 THE 2N1613 AND 2N17I1 ARE NfN SILICON-" PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR SWITCHING AND D.C. AMPLIFIERS. I P f f i C E B ABSOLUTE MAXIMUM RATINGS C o lle c to r - B a s e V o lta g e

BFY34

Abstract: BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613
Contextual Info: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.

BFY33

Abstract: BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613
Contextual Info: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are d o u b le -d iffu se d planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (T O -3 9 ). The co lle cto r is electrically connected to the case.

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

pj 899

Contextual Info: T im es ? 2N1711* *also available a: JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN TRANSISTORS NPN GENERAL PURPOSE TRANSISTOR HIGH FREQUENCY HIGH CURRENT GAIN @ 1 5 0 mA LOW SATURATION VOLTAGE TO-39 TO-205AD M A X IM U M R A T IN G S SY M BO L 2N 1711 U N IT S

2n1711

Abstract: 2N1613 2n 1613 H12B LE 138 1711 h21e 2n 1711
Contextual Info: *2 N 1613 *2 N 1711 NPN S IL IC O N TR A N S IS TO R S , E P IT A X IA L P LA N A R T R A N S IS T O R S N P N S IL I C I U M , P L A N A R E P I T A X I A U X ^ Preferred device D is p o s itif recommandé LF amplification Am plification B F Switching Commutation

2N4036

Abstract: 2N4314 2n4037 transistor 2N4314 jf27 2N4036 solid state tr 2n 60b I292
Contextual Info: ÏÏÏ E SOLID STATE DITI 3075001 OC 1711E 4 | ~ 7 _ High-Speed Power Transistors File Num ber 2N4036, 2N4037, 2N4314 216 Medium-Power Silicon P-N-P Planar Transistors TERMINAL DESIGNATIONS General-Purpose Types for Industrial and

2N1711

Abstract: 2N1613 "2N1711"
Contextual Info: 3QE D • 7^237 ÜD311D3 7 ■ f Z 7 SGS-THOMSON m 7 # MD@fô [i[Li m «§ “ T T ^ - t h o m s o n 2N1613 2 N 1711 ^ SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTIO N The2N1613and2N1711aresiliconplanar epitaxial NPN transistors in Jedec TO-39 metal case. They

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

TRANSISTOR BC 313

Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

2sd 5023

Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1