2MIN Search Results

5687 general electric

Abstract: mitsubishi 1183 MGF0912A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power

MGFC42V5964A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFS45V2735

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

4SP820M T

Abstract: 10SP470M 4SP1000M sanyo OS-CON 25SP56M 6SP220M SANYO 6SP390M 4SP560M T 10SP56M 16SP33M 20SP22M
Contextual Info: TM 2. SPECIFICATIONS FOR EACH SERIES Large Capacitance and Low ESR Optimum for Computer Audio etc. SP Items Category temperature range Tolerance on rated capacitance 120Hz Tangent of loss angle(tanδ) (120Hz) Leakage current (µA/2min)(or less) ※2 ESR (100k to 300kHz)

MGFC42V5258

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8

MGFC40V3742

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2

MGFC41V5964

Abstract: fet 30 f 124
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4

MGFC40V3742

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2

signal strength meter

Abstract: RF Transmitter 315MHz rf 315mhz LED display for radio meter led bargraph meter 315MHz RF
Contextual Info: RF HAND HELD RF METER • • • • • • • • • Hand Held Signal Strength Meter Detects Carrier RF Activity 10 digit LED Display with Peak Hold Displays -108dBm to –40dBm Signal Strength Operates from Single PP3 Battery Battery Low Indication Auto Shutoff after 2min

Contextual Info: Miniature Aluminum Electrolytic Capacitors UZ 5mm in length, temperature of wide range solvent proof Series UZ series measures 5mm in length and have stable characteristics at the temperature of wide range (−55 to +105°C) They are miniature, long life and solvent proof (within 2minutes).

Contextual Info: PACKAGE OUTLINE DRAWINGS S C Series o 2.0 1 CM 6 <£> cvi Lflj L 2MIN 1.3 5 ±0.4 - , + 0 .4 5.1 -o.i 4.35±0.4 1.2*0.2 +4 - 0 K-Pack Series 6 . 5 ± 0.2 5 ± 0.2 nc 0 . 6 *02 -o.i q f\j _ bo m M n *0.2 . 9 -o.i 4 Collmer Semiconductor, Inc. • (214 233*1589

MGFC50G

Contextual Info: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2

15000UF

Contextual Info: Large Aluminum Electrolytic Capacitors PL-FA Snap-in Type 105°C Standard Series • Specifications Items Rated voltage Operating temperature range Capacitance tolerance V (°C) (%) Tangent of loss angle (tan δ)(120Hz)(MAX.) Leakage current (L.C.)(µA/after 2min.)(MAX.)

5.8 ghz amplifier 10w

Abstract: Gaas Power Amplifier 10W
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8

PO32

Abstract: MGFC42V3436
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6

MGFC42V3742

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2

MGFC42V3742

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET . DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2

MGFC42V5258

Abstract: GF-18 5.8GHz
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8

5.8GHz

Abstract: 5.8 ghz amplifier 10w MGFC40V5258
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8

MGFC47V5864

Abstract: 5.8 ghz transmitter
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ∼ 6.4GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES 2.2 2MIN

6SL22M

Abstract: 10SL100M 10SL10M 6SL47M 6SL10M 6SL15M SANYO 3.3uf ESR 10SL47M 10SL4R7M 25SL6R8M
Contextual Info: Specifications Items 1 Operating temperature range 2 Capacitance tolerance 120Hz 3 Tangent of loss angle(120Hz) Leakage current(uA/after 2min.) 4 (or less) 2 5 ESR(100k 300kHz) Temperature characteristics 6 Impedance ratio at 100kHz High-temperature load

10SH220M

Abstract: 20SH100M 25SH1R5M 20SH47M 16SH10M 25SH15M 16WV 16SH1M 25SH3R3M 16SH2R2M
Contextual Info: Specifications Items 1 Operating temperature 2 Capacitance tolerance 120Hz 3 Tangent of loss angle(120Hz) 4 Leakage current(uA/2min.)(or less) 5 ESR(100k 300kHz) Temperature characteristics 6 Impedance ratio at 100kHz 2 High-temperature load 105degrees C,

SC371-10A

Abstract: TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A
Contextual Info: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 1.35 ± 0.4 Surface-mount device Low VF 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 5.1 Super high speed switching Marking