MGFC41V5964 Search Results

MGFC41V5964

Abstract: fet 30 f 124
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4

Contextual Info: < C band internally matched power GaAs FET > MGFC41V5964 5.9 – 6.4 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

12w 94

Contextual Info: < C band internally matched power GaAs FET > MGFC41V5964 5.9 – 6.4 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

fet 30 f 124

Abstract: TIP 41 fet "GaAs FET" MGFC41V5964
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

3642G

Contextual Info: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m