MGFC36V5258 Search Results
MGFC36V5258 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MGFC36V5258 | Mitsubishi | 5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET | Original | 267.72KB | 3 | ||
| MGFC36V5258 | Mitsubishi | 5.2-5.8 GHz BAND 4W Internally Matched GaAs FET | Scan | 93.09KB | 2 | ||
| MGFC36V5258 | Unknown | High Frequency Device Data Book (Japanese) | Scan | 46.84KB | 1 | ||
| MGFC36V5258 | Unknown | FET Data Book | Scan | 80.41KB | 2 |
MGFC36V5258 Price and Stock
Mitsubishi Electric MGFC36V5258015.2-5.8 GHZ BAND 4W INTERNALLY MATCHED GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MGFC36V525801 | 15 |
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Get Quote | |||||||
Mitsubishi Electric MGFC36V525851RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MGFC36V525851 | 4 |
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Get Quote | |||||||
MGFC36V5258 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
mgfc36v5258 | |
Mitsubishi
Abstract: MGFC36V5258 mitsubishi electric 5.8GHz
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Original |
june/2004mgfc36v5258mitsubishimitsubishi electric+1 | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC36V5258 5 .2 ~ 5 .8 G H z BAND 4W INTERNALLY M ATCHED GaAs F E T DESCRIPTION The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed fo r use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic |
OCR Scan |
gfc36v5258mgfc36v5258 | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V5258 5.2—5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 36V 5 25 8 is an in te rna lly impedance-matched GaAs pow er F E T especially designed fo r use in 5.2 ~ 5.8 GHz band am plifiers. The herm etically sealed m etal-ceramic |
OCR Scan |
mgfc36v5258 | |
3642GContextual Info: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m |
OCR Scan |
3642g | |
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Contextual Info: < C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
mgfc36v5258 | |
MGF2430A
Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
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OCR Scan |
12ghzmgf4919emgf4914emgf49t4d+11 | |
C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
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Original |
m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16 | |
MGF4404A
Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
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OCR Scan |
mgf2430mgf2430amgf2445mgf4301a+12 | |
MGFC36V6471
Abstract: MGFC36V5964 MGFC36V4450
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OCR Scan |
mgfc36vxxxxmgfc36v5258-01mgfc36v5258-51mgfc36v5964-01+8 | |
MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
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Original |
h-cx587-rki-1311mgf4937mgfg5h1503+8 | |
MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
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h-cr587-jki-0612mgfs45h2201gmgfs40h2201g+8 |