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    MGFC36V5258 Search Results

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    MGFC36V5258 Price and Stock

    Mitsubishi Electric MGFC36V525851

    RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
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    ComSIT USA MGFC36V525851 4
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    Mitsubishi Electric MGFC36V525801

    5.2-5.8 GHZ BAND 4W INTERNALLY MATCHED GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGFC36V525801 15
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    MGFC36V5258 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGFC36V5258 Mitsubishi 5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V5258 Mitsubishi 5.2-5.8 GHz BAND 4W Internally Matched GaAs FET Scan PDF
    MGFC36V5258 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC36V5258 Unknown FET Data Book Scan PDF