MGFC42V3742 Search Results

Contextual Info: < C band internally matched power GaAs FET > MGFC42V3742 3.7 – 4.2 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFC42V3742

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2

MGFC42V3742

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET . DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2

Contextual Info: < C band internally matched power GaAs FET > MGFC42V3742 3.7 – 4.2 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3 .7 —4.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING U n it: m illim e te rs in c h e s The M G F C 4 2 V 3 7 4 2 is an internally impedance-matched GaAs power F E T especially designed fo r use in 3.7 ~ 4.2

1045a

Abstract: MGFC42V3742
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3 .7 ~ 4 .2 G H z BAND 16W IN TE R N A LLY M ATCH ED GaAs F E T D E S C R IP T IO N The M G FC 42V 3742 is an in te rna lly impedance-matched GaAs power FET especially designed fo r use in 3.7 ~ 4.2 GHz band am plifiers. The herm etically sealed metal-ceramic

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10

MGF4404A

Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
Contextual Info: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed