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    Nexperia PTVS22VS1UTR-QX

    TVS DIODE 22VWM 35.5VC SOD123W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () PTVS22VS1UTR-QX Cut Tape 2,945 1
    • 1 $0.57
    • 10 $0.35
    • 100 $0.23
    • 1000 $0.15
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    PTVS22VS1UTR-QX Digi-Reel 2,945 1
    • 1 $0.57
    • 10 $0.35
    • 100 $0.23
    • 1000 $0.15
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    PTVS22VS1UTR-QX Tape & Reel 3,000
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    Avnet Americas PTVS22VS1UTR-QX Tape & Reel 9,000
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    Newark PTVS22VS1UTR-QX Cut Tape 5
    • 1 $1.14
    • 10 $0.56
    • 100 $0.44
    • 1000 $0.37
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    Vyrian PTVS22VS1UTR-QX 5,165
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    Nexperia PTVS22VS1UTR,115

    TVS DIODE 22VWM 35.5VC SOD123W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () PTVS22VS1UTR,115 Digi-Reel 2,534 1
    • 1 $0.55
    • 10 $0.34
    • 100 $0.22
    • 1000 $0.15
    • 10000 $0.15
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    PTVS22VS1UTR,115 Cut Tape 2,534 1
    • 1 $0.55
    • 10 $0.34
    • 100 $0.22
    • 1000 $0.15
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    PTVS22VS1UTR,115 Tape & Reel 3,000
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    Avnet Americas PTVS22VS1UTR,115 Tape & Reel 16 Weeks 9,000
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    TME PTVS22VS1UTR,115 1
    • 1 $0.47
    • 10 $0.31
    • 100 $0.22
    • 1000 $0.22
    • 10000 $0.22
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    Hirose Electric Co Ltd PS2-2VS-42C

    CONN RCPT HSG 44POS
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    DigiKey PS2-2VS-42C Tray
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    Nexperia PTVS22VS1UR-QX

    TVS DIODE 22VWM 35.5VC SOD123W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTVS22VS1UR-QX Tape & Reel 3,000
    • 1 -
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    • 10000 $0.11
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    Avnet Americas PTVS22VS1UR-QX Tape & Reel 16 Weeks 9,000
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    • 10000 $0.11
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    Newark PTVS22VS1UR-QX Cut Tape 2,775 5
    • 1 $0.53
    • 10 $0.42
    • 100 $0.26
    • 1000 $0.17
    • 10000 $0.17
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    Vyrian PTVS22VS1UR-QX 3,507
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    Nexperia PTVS22VS1UR-8X

    TVS DIODE 22VWM 35.5VC SOD123W
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    DigiKey PTVS22VS1UR-8X Tape & Reel
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    S22VS. Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING Unit:millimeiers The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. y FEATURES • High output power PidB=38dBm(TYP.)


    OCR Scan     		MGF0909A MGF0909A, 38dBm 20dBm PDF

    ha 1406 ha

    Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package


    OCR Scan     		MGF1801B MGF1801B, ha 1406 ha PDF