MGFS45V2735 Search Results

MGFS45V2735 Datasheets (2)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFS45V2735		Mitsubishi	2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET	Original	PDF	245KB	3
MGFS45V2735		Mitsubishi	2.7-3.5 GHz BAND 30W INTERNALLY MATCHED GaAs FET	Scan	PDF	153.76KB	2

MGFS45V2735 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGFS45V2735 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfs45v2735 -45dbc 25deg	PDF
MGFS45V2735 Contextual Info: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfs45v2735 -45dbc	PDF
MGFS45V2735 Contextual Info: M IT S U B IS H I S E M IC O N D U C T O R < G a A s F E T > MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED G a As FET DESCRIPTION The M G FS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 G H z band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	mgfs45v2735 -45dbc 25deg	PDF
MGFS45V2735 Abstract: 051 166 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfs45v2735 -45dbc 051 166	PDF
051 166 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfs45v2735 -45dbc 051 166	PDF
Contextual Info: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfs45v2735 -45dbc	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	m6sta-005va/wa/sa mf-156sta-006va/wa/sa mf-156sra-002va/wa/sa mf-622sta-004va/wa/sa +16mf-622sta-005va/wa/sa mf-622sta-006va/wa/sa mf-622sra-002va/wa/sa mf-2500sta-002va/wa 003va/wa 004va/wa c42v5964 mgf1302 transistor mgf1601 mgfc1402 m57721 m67760lc h2 marking sot-89 mmic 2sc5125 mitsubishi m57710-a m68776	PDF
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	h-cx587-r ki-1311 mgf4937 mgfg5h1503 +8mgf4937am gd-32 mgfg5h1502 mgf0904 mgfc39v5964 mgf2430 mgf0909a ba012j1	PDF