2CI237 Search Results

Contextual Info: SGS-THOMSON S D 1 5 3 0 -0 8 iE J lÊ ÏÏIM lM RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 40 WATTS typ. IFF 1030 - 1090 MHz 35 WATTS (min.) DME 1025 - 1150 MHz 25 WATTS (typ.) TACAN 960 - 1215 MHz

Contextual Info: £ = 7 S G S -T H O M S O N SERIAL ACCESS SPI BUS 1K 128 x 8 EEPROM • 100,000 ERASE/WRITE CYCLES - 10 YEARS DATA RETENTION ■ SINGLE 4.5V to 5.5V SUPPLY VOLTAGE ■ SPI BUS COMPATIBLE SERIAL INTERFACE ■ 2 MHz CLOCK RATE MAX ■ BLOCK WRITE PROTECTION

Contextual Info: $ 7 . S G S - IH O M S O N M24C64 M D g I[ L I© W (ô iD © i SERIAL EXTENDED ADDRESSING COMPATIBLE _ WITH l2C BUS 64K (8K x 8) EEPROM PRELIMINARY DATA COMPATIBLE with l2C EXTENDED ADDRESSING TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL

Contextual Info: r z 7 SG S-TH O M SO N ^7# ST6210B-ST6215B ST6220B-ST6225B 8-BIT HCMOS MCUs WITH A/D CONVERTER PR ELIM INA R Y DATA • 3.0 to 6.0V Supply Operating Range ■ 8 MHz Maximum Clock Frequency ■ -40 to +85°C Operating Temperature Range ■ Run, Wait, Stop Modes

Contextual Info: SGS-THOMSON M54/M74HC365 M54/M74HC366 iLiOT@ «S HEX BUS BUFFER 3-STATE HC365 NON INVERTING - HC366 INVERTING H IG H S P E E D = 9 ns (TYP) AT V c c = 5 V LOW POWER DISSIPATION Ic c = 4 (iA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.)

diode sg 87

Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
Contextual Info: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate

Contextual Info: £U £J_ei £ ÿ j 7T5T237 QG31b2Q 5 • _ 'T-ZS-iS S G S - ÎH HO O MM SS OO NN B T A /B T B 06 S [H O T M *S S G S-TH0MS0N SENSITIVE GATE TRIACS ■ GLASS PASSIVATED CHIP ■ Ig t SPECIFIED IN FOUR QUADRANTS ■ AVAILABLE IN INSULATED VERSION -» BTA SERIES INSULATING VOLTAGE

Contextual Info: Æ 7 SGS-THOMSON ^ 7 # e VIDEO & SOUND IF SYSTEM • ■ ■ ■ ■ ■ ■ ■ VERY LOW CURRENT ABSORPTION 3 STAGE IF GAIN CONTROLLED AMPLIFIER SYNCHRONOUS VIDEO DEMODULATOR WHITE SPOT AND NOISE INVERTER AGC CIRCUIT WITH NOISE GATING TUNER AGC OUTPUT FOR PNP TUNERS

IRFP450FI

Abstract: GC507 7W53 GC508 IRFP450 C18070 IRFW450 IRFP450F
Contextual Info: 7 ^ 2 3 7 Q 0 M 5 7 4 b 1=17 « S G T H SGS-THOMSON ¡Li IT^MD éS IRFP450FI IRFW450 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE IRFP450 IRFP450FI IRFW450 • . ■ . V dss R d S(o ii Id 500 V 500 V 500 V < 0.4 n < 0.4 O

Contextual Info: /S T SGS-THOMSON *7 # . M48T59 HO E©ilLI gra©R! D(@i CMOS 8K X 8 TIMEKEEPER SRAM PRELIMINARY DATA PCDIP28 (PC) Battery CAPHAT SOH28 (MH) Battery SNAPHAT Figure 1. Logic Diagram < — o o INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK and POWER-FAIL CONTROL CIRCUIT

SGSP211

Abstract: sgsp312 P512 74c74 P312 Diode D7E
Contextual Info: s G S-T H O H SO N G7E : 73C D I 1 7 3 j> 7 7121237 D DÜ 17SSQ 7 T ~-3?-/r_ SGSP211/P212 SGSP311/P312 ? SGSP511/P512 N-CHANNHL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

Contextual Info: S G S -T H O M S O N D M a iC T G S tM O ! M 2 8 F 1 0 2 1 Megabit 64K x 16, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 1OOpA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10[is

bdx88b

Contextual Info: 7=12=5237 0 0 2 6 4 7 R H • I •'SVZ-^ SGS-THOMSON BDX87/87A/87B/87C BDX88/88A/88B/88C S G S-THOMSON 3D E D POWER DARLINGTONS DESC RIPTIO N The BDX87, BDX87A, BDX87B and BDX87C are Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun­

DD 127 D TRANSISTOR

Abstract: HCF4093BE hcf4093bc HCF4093B
Contextual Info: rz7 S G S -T H O M S O N Ä T # M G [ K IL [ I S r a @ [ jie s H C C / H C F 4 0 9 3 B QUAD 2-INPUT NAND SCHMIDT TRIGGERS . SCHMITT-TRIGGER ACTION ON EACH INPUT WITH NO EXTERNAL COMPONENTS . HYSTERESIS VOLTAGE TYPICALLY 0.9V AT VDD = 5V AND 2.3V AT V dd = 10V

Contextual Info: £ = 7 S G S -T H O M S O N M Q l3 m i© W [ t l g § M 2 7 C 4 0 5 4 Megabit (512K x 8 OTP ROM • PIN COMPATIBLE with the 4 MEGABIT, 5V ONLY FLASH MEMORY (M29F040) ■ VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE

TDA7266

Contextual Info: / = 7 S C S - T H O M S O N * 7 / . [Ml S[si(5 BIUg(B'iflsiiö)Mlgg TDA7266 7+7W DUAL BRIDGE AMPLIFIER PRODUCT PREVIEW • WIDE SUPPLY VOLTAGE RANGE (3-18V) ■ MINIMUM EXTERNAL COMPONENTS - NO SWR CAPACITOR - NO BOOTSTRAP - NO BOUCHEROT CELLS - INTERNALLY FIXED GAIN

Contextual Info: s G S —THOMSON S IC I D • 7 C12,:1237 0 0 0 2 3 2 3 ' 7 59C 02 323 O D T-03 -A.I ESM 245-50, R ESM 245-1000, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE

MC3479C

Contextual Info: Æ * T 71» S G S -T H O M S O N IlflgesmiSTOMlES MC3479C S T E P P E R . SINGLE SUPPLY OPERATION + 7.2 V TO +16 V . 350 mA/ COIL DRIVE CAPABILITY . BUILT IN FAST PROTECTION DIODES • SELECTABLE CW/CCW AND FULL/HALF STEP OPERATION « SELECTABLE HIGH/LOW OUTPUT IMPED­

thomson thyristors

Abstract: thomson scr 77B2
Contextual Info: 7flC D ~ | 7^ S C1E 37 D □ □ 775fi 5 jjjT S GS-TH O M SÔ N 78C 0 7 7 5 8 BTW 49-50— BTW 49-800 FAST SWITCHING THYRISTORS EMICONDÜCTORS THYRISTORS RAPIDES T - Z S '/ r b m h m ü m J Ü i. •T RMS = I S S C R designed for high frequency p o w e r

processor picture in picture

Abstract: EF9365
Contextual Info: S G S-T H O U SO N 7ÛC T " | 7 ^ 2 3 7 0D D 70Ô 2 EF9365 4 ~ T-52-33-09 EF9366 e m ic o n d ü c t o r s MOS GRAPHIC DISPLAY PROCESSOR GDP Thé GDP îs a true high resolution graphic display processor, which con­ tains aii the functions required to process vector generation at a very high

Contextual Info: S G S-THOHSON T54LS490 T74LS490 D7E D ” 1 . J SCHOTTKY \OW POWER INTEGRATED o o ib 3 7 b o I CIRCUITS 6 7C 16505 DUAL DECADE COUNTER DESCRIPTION The T54LS490/T74LS490 contains a pair of high­ speed 4-stage ripple counters. Each half of the T54LS/T74LS490 has individual Clock, Master Re­

Contextual Info: FEATURES • A, 1 c *0 2 Ü □ 19 A, □ 25, 35 and 45 ns Address Access Time A, 3 C □ 18 Aj □ Automatic Power-up Clear *7 4 O 3 17 A, *8 s q □ 16 A„ □ JEDEC LVTTL Standard +3.3 volt operation □ Equal access and cycle times 3 20 Vcc MK41L68 A, 6 C

transistor sta 733

Abstract: IRF 730 TRANSISTOR IRF 318 J CL66 irf 80 n Ultrasonic power generator schematic irf transistors IRF730FI 730 mos IRF732
Contextual Info: 30E D m 7 ^ 2 3 7 OD2T7*iS a_• | / T 7 S GS-THOM SO N IRF 730/FI-731/FI 4 T /W[ « [ I » ! « ! _ IRF 732/FI-733/FI 1 6 S-THOMSON TYPE V DSS IRF730 IRF730FI IRF731 IRF731FI IRF732 IRF732FI IRF733 IRF733FI 400 V 400 V 350 V 350 V 400 V 400 V 350 V

Contextual Info: ¿57 SG S-TH O M SO N MD ^ HLICTI3®lfflD©i BDX53E/BDX53F BDX54E/BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . BDX53F AND BDX54F ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION TheBDX53E, BDX53F are silicon epitaxial-base NPN power transistors in monolithic Darlington