2SK1900
Abstract: ITR02166 ITR02167 ITR02168 ITR02169 ITR02170 ITR02171
Contextual Info: 2SK1900 Ordering number : EN4210A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1900 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable
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Contextual Info: 2SK1900 Ordering number : EN4210A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1900 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable
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100AVS
Contextual Info: 2SK1900 2090 2093 LD L o w D rive S e r i e s VDSs = 60V N Channel Power MOSFET E'42 10 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1900-applied equipm ent.
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Contextual Info: 2SK1900FD Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)1.65 Minimum Operating Temp (øC)-55
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2SK1900
Abstract: 2S100
Contextual Info: 2SK1900 2093 2090 lD L o w D rive S eries V Ds s = 6 0 V N Channel Power MOSFET 4 2 10 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1900-applied equipm ent.
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EN4210
Abstract: 2SK1900
Contextual Info: Ordering number:EN4210 N-Channel Silicon MOSFET 2SK1900 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1900] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SK1925
Contextual Info: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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2SK243-2
Abstract: 2SK2432 2sk1470
Contextual Info: • LD Series Lineup VDSS = 60V, N-channel Absolute maximum ratings atTa = 25°C Type No. Package VfiSS VG8S *D A 2SK1470 CP 0.4 2.0 PCP +15 TP 2SK1472 2SK2432 ZP 0.9/1.2 0.4 45 0.45/0.6 0.35/0.45 2.0 150 1.2/1.6 0.9/1.2 1.0 45 30 0.08/0.11 0.06/0.08 8.0
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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2SK2164
Abstract: 2SK1885 2SJ270 2SJ260 2sj261
Contextual Info: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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NO421
Abstract: 2SK190 2SK1900
Contextual Info: Ordering number: EN4210 _ 2SK190Ö No.4210 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.
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13FLP
Abstract: sj22 serie 2sk
Contextual Info: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6
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BI 370
Abstract: 2SK1878 LM9005 2501L 2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 BA 5810
Contextual Info: - 124 - f £ tt % ffl & m S m * ê JV K V m * (V) * * M 3 & 1 * (A) * P d /P c h Ig s s (max) (W) (A) Vg s (V) (min) (max) Vos (A) (A) (V) fó Í# 1*È (Ta=25‘ C) (min) (V) (max) Vos (V) (V) (min) (S) Id (A) Vd s (V) % ? Id (A) 2SK1852 NEC SW.Motor-D
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2S1265
Abstract: bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260
Contextual Info: Large-signal Power MOSFETs l The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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TT2192
Abstract: sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF
Contextual Info: Ordering number : E I 0 0 9 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.
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