2SD2167 Search Results

2SD2167

Abstract: T100
Contextual Info: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.

2sD2394

Abstract: D348 transistor TI2150 marking HRA 2SD2576
Contextual Info: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 1) 2) 3) 4) Built-in zene r diode betw een collector and base. Z ener diode has low voltage dispersion. Strong protection against reverse pow er surges due to low loads. P c * 2 W (On 4 0 X 4 0 X 0 -7 m m ceram ic board)

Contextual Info: h 7 > V ^ ^/Transistors 2SD2167 2SD2167 vu=i>h7>v* W Epitaxial Planar NPN Silicon Transistor ftHiSMzftiSliffl/l-ow Freq. Power Amp. • ft* • W fN 'jiia / 'D im e n sio n s U nit: mm 1) H U ? ? • 3 1 ± 4 V 0 }y x l — ? ! * - K S rtlK o 2) "J tlT -* & . < » r t v V W f t H U Z 'P

2SD2576

Abstract: 2SD2394 D310 2SD2167 D348 transistor D348
Contextual Info: Transistors 2SD2167 2SD2394 / 2SD2576 92S-358–D310 (94L-1098-D348) 314

sc6202

Abstract: SC-6202 ZENER DIODE 2A MARKING DL 2SD2167 T100
Contextual Info: 2SD2167 Power Transistor 31±4V, 2A 2SD2167 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due

transistor D 2394

Abstract: 2SD2576
Contextual Info: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 2SD2167 •F e a tu re s 1 ) Built-in zs n e r diode betw een collector and base. 2 ) Z en er diode has low voltage dispersion. 3 ) Strong protection aga inst reverse pow er surges due to low loads.

2SD2167

Abstract: T100 2A 5v ZENER DIODE
Contextual Info: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.

Contextual Info: Transistors IC SMD Type Product specification 2SD2167 Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W on 40 40 0.7mm ceramic board .

Contextual Info: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.

0.25V zener

Abstract: 2SD2167
Contextual Info: 2SD2167 N "7 > V 7s 2/Transistors 2SD216T Epitaxial Planar NPN Silicon Transistor fiffl/L o w Freq. Power Amp. ÿ j-Îi^ jiH /D im e n s io n s Unit : mm 1) • A i- x n m : : 3 1 ± 4 V W 'V 2) 7 i t - i Œ » / < 7 7 i« g i: ÿ l.fi±0.l & i'o = jr T i_

Zener diode smd marking 27

Abstract: 2A 5v ZENER DIODE smd zener diode 5v ZENER DIODE 2A SMD TRANSISTOR MARKING 2A 2SD2167
Contextual Info: Transistors SMD Type Power Transistor 2SD2167 Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W on 40 40 0.7mm ceramic board . Absolute Maximum Ratings Ta = 25

Contextual Info: 2SD2167 7 . ^ /Transistors l f c f $ * V 7 N P N '> U = J > Epitaxial Planar NPN Silicon Transistor • sir yi V; V sji -r 2SD2167 rtiiH /D im e n s io n s Unit: mm 1) □ U ? 5? • A - X P bI C 31±4V <7)7 i d - —£ d — K£ 2) 'V i ^ - S S W A ' ^ ' y 4rfi'dE?£lC'>

2SA1690

Abstract: BCX53 Rohm RXT-A28 2SD2170 2SB1132 2SB1181 2SB1182 2SB1184 2SB1188 2SB1189
Contextual Info: R OH M ESE D CORP Tr • ?Ö 2Ö^ GOGEÒ^ fl ■ T - A l ’ Ol Transistors- • MPT SOT-89 , OPT (DPAK) Types Ty 3 6 MPT 2SB1132 — — Driver — 2SD1760 2SD17S8 — 2S01733 2SD1918 2SD2126 2SD2167 2SB1424 2SD2150 2SB1308 2SB1386 2SD1963 2SD2Q98 2SB1427

ZENER DIODE 2A

Abstract: 2SD2167 T100 2A 5v ZENER DIODE
Contextual Info: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

2sd198

Abstract: MARKING CODE f5 2SA1812 113 marking code transistor ROHM 2SA1690 2SD1788 2SD2211 2SK2041 F5 marking code 2SB1181
Contextual Info: Tran.qi.stnrs< S u rfa c e M ounted T v d r r > ROHM CO LTD SbE D • 7flE5cn ti D O O b ^ a 03S ■ RHPI ■MPT • CPT F5 • PSD Application MPT — F 3 S - 17 Package CPT F5 Type | 2S81132 2S81182 Ic A Ic Max (A) - -3 2 -1 - -5 0 -3 hpE W T tTa=2ST)

2SB1516

Abstract: 2SA1807 2SA1812 2sc4939 2SD2170 2SA1900 2SB1132 2SB1182 2SB1188 2SB1189
Contextual Info: 7 0 2 0 ^ 0007372 noNin IRM I bTO MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *VCES*VCEH Part No. lc (A) Pc (W) ic Max. (A) MPT {Ta=25‘C) hFE VCE (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82— 390 -3 -1 0 0 E 3 ! f 2SA1900 -

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

2SC4074K

Abstract: 2SC4326K TA6270F 2SA1821 2SB1051 2SD478 2SA1690 2SA1455K fiio x5 UMW8
Contextual Info: h 7 > v X ^ / T ransistors h 7 S ttli i í p ^ > y 7 $ o i ' T i é c & f c o T ^ t i i ^ L n í s ^ i o ^ g t t ' î î o 1Co # £ LT feII*§I: S£ • f i t c 1975 ^*'0 S7 > v ^ 5î 0 Ü^ÎgflfêLi L£ #\ M - t k t Z Z t £ S t Ä « , 1 ^ ® S tt N

2SK1973

Abstract: d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307
Contextual Info: Transistor Quick reference I Laadad p P a g e lli Package-Application Vceo V * * y,CES * * *w CER Vn«w Application EM3 UMT 2SC4081LN 40 Low Noise I 50 25 60 Package | Part No. f 2SA1037AKLN(E) SMT / 2SA1774 \2 S C 4 6 1 7 120 2SC4723 /2SA 1576A V2SC3722K