2SD1719 Search Results

Contextual Info: Transistors SMD Type Product specification 2SD1719 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 High emitter-base voltage Collector open VEBO

Contextual Info: Pow er Transistors 2SD1719 2SD1719 S ilicon N P N E p itaxial P la n a r Type High DC C urrent G ain Package D im ensions Pow er A m p lifier Ii f e , U nit 1 mm • Features 3.7max. 8.7 max. • H igh D C c u r re n t gain (hFE) • G ood lin e a rity of D C c u r re n t gain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter

b 803a

Abstract: 2SD1719 2SD1257
Contextual Info: Pow er T ra nsistors 2SD1719 2SD 1719 Silicon NPN Epitaxial Planar Type High DC Current Gain • Features h FE , Package Dimensions Power Amplifier U n it 1 mm 3.7max. 8.7 n • High DC cu rre n t gain (Iife) • Good linearity of DC c u rre n t gain (Iife)

2SB1168

Abstract: 2sb1163 2SD1731 2SD1713 2SD1714 2SD1715 2SD1716 2SD1718 2SD1719 2SD1720
Contextual Info: - 262 - Ta=25XïP*Ef]fÎTc=25eC m 2SD1713 2SD1714 2SD1715 2SD1716 2SD1717 2SD1718 2SD1719 2SD1720 2SD1722 2SD1723 2SD1724 2SD1725 2SD1726 2SD1727 2SDÌ728 2SD1729 2SD1730 2SD1731 2SD1732 2SD1733 2SD1733F5 2SD1734 2SDÎ735 2SD1736 2SD1737 2SD1738 2SD1739

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD1810

Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210
Contextual Info: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5

2SD2502

Abstract: 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158 T0-220F
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Pow er T ransistors (continued) Applica­ V ceo tion Func­ (V) tions Pa ckage (No.) VcE(sat) lc (A) typ. (V) lc Ib T0-220(a) (D56) (A) (mA) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors (continued) Applica­ V ceo tion Func­ (V) tions High hre lc (A) Pa ckage (No.) VcE(sat) typ. (V) lc Ib (A) (mA) T0-220(a) (D56) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )