2SD1468S Search Results

Contextual Info: Tflsa'i'n 0GGSÔ7S 40E D ROHM CO LTD h -7 > ì? 7 , % /Transistors =1 IRHM 2SD1468/2SD1468S - 7=2 7 - 0 9 2SD14S3 2SD1468S NPN '>>;□> b T s v W ^ l l ^ i a ^ ^ / M e d i u m Power Amp. Epitaxial Planar NPN Silicon Transistors • 1 Vce t sat)=6mV at 1mA/0.1 mA)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SD1468S TRANSISTOR NPN TO-92S FEATURES Low saturation voltage, typically Vce(sat)=0.006V z Ideal for voltage, high current drives, z High DC current gain and high current

Contextual Info: S -7 > V 7-. $ /Transistors 2SD1468 2SD1468S 2SD1468/2SD1468S i t N P N '>>;=!> V 7 > V * $ /M ed iu m Power Amp. Epitaxial Planar NPN Silicon Transistors • 4i-M';J'>±[2l// Dimensions U n it: mm s iry jv ;V ^ i-r ti& 1) VCE ( sat )= 6 m V (at 1 mA/0.1 mA)

2SD1865

Abstract: 2SD1834 2SD1468S
Contextual Info: Transistors 2SD1834 2SD1468S / 2SD1865 94S-340-D64 (94L-767-D65) 311 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SD1468S

Abstract: 2SD1834 2SD1865
Contextual Info: Transistors 2SD1834 2SD1468S / 2SD1865 94S-340-D64 (94L-767-D65) 311

2SD1468

Abstract: 2SD1468S
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SD1468S TRANSISTOR NPN TO-92S FEATURES Low saturation voltage z Ideal for voltage, high current drives, z High DC current gain and high current 1. EMITTER z 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SD1468S TRANSISTOR NPN TO-92S FEATURES Low Saturation Voltage z Ideal for Voltage, High Current Drives, z High DC Current Gain and High Current 1. EMITTER z 2. COLLECTOR

2SD1834

Abstract: 2SD1468S
Contextual Info: 2SD1468S Transistors Muting Transistor 15V, 1A 2SD1468S zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.08V at Ic / IB = 500mA / 500µA. 2) Ideal for low voltage, high current drives. 3) High DC current gain and high current.

2SD1468S

Contextual Info: Muting Transistor 15V, 1A 2SD1468S Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.08V at Ic / IB = 500mA / 500A. 2) Ideal for low voltage, high current drives. 3) High DC current gain and high current. SPT 2.0

27533

Abstract: 4001 diode in 4001 2SD1468 4001 diode 2SD1468S 2.7533 BF275
Contextual Info: SPICE PARAMETER 2SD1468S by ROHM TR Div. * 2SD1468S NPN BJT model * Date: 2006/12/14 .MODEL 2SD1468S NPN + IS=900.00E-15 + BF=275.33 + VAF=50 + IKF=1.4001 + ISE=900.00E-15 + NE=2.0954 + BR=58.360 + VAR=100 + IKR=33.667E-3 + ISC=1.7989E-12 + NC=2.4110 + NK=.17736

TO92S

Contextual Info: 2SD1468S TO-92S Transistor NPN TO-92S 1. EMITTER 2. COLLECTOR 123 3. BASE Features — — — Low saturation voltage, typically Vce(sat)=0.006V Ideal for voltage, high current drives, High DC current gain and high current MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD1468

Contextual Info: K -7 > v 3 * $ /T ra n s is to rs 2SD1468/2SD1468S ; U 7 V - ^ NPN V «; =3> H7 > V X £ Epitaxal Planar NPN Silicon Transistors /M edium Power Amp. 3. — f ^ ffl/M u tin g 2SD1468 2SD1468S 7 • • \H i[ 2 /D im e n s io n s Unit : mm 1) VcE(sat) V cE (s a t)= 0 .0 0 6 V (T y p .)

23d14

Contextual Info: 2SD1834 2SD1468S/2SD1865 Transistors M edium Pow er T ran sistor 60V, 1A I 2SD1834 •Features • A b so lu te maximum rating« ( T a = 2 5 t } 1 ) Darlington connection for high D C current gain. (Typ. 15000 at Vce/lc~3V/0.5A) 2 ) High input impedance.

2SD1466

Abstract: 2SD1834 OOLB AQ marking rohm
Contextual Info: 2SD1834 2SD1468S/2SD1865 Transistors Medium Power Transistor 60V, 1A I 2SD1834 •A b s o lu te maximum ratings ( T a = 2 5 t ) •F e a tu re s 1 ) Darlington connection for high DC current gain. (Typ. 15000 at V ce/I c = 3 V /0 .5 A ) 2 ) High input im pedance.

1032B

Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
Contextual Info: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

2SD1960

Abstract: 2SD1468 2SB737 L120A 2SC1740 transistor 2SD786 2SD786S 2SC1740SLN 2SA933A 2SC2808
Contextual Info: Transistors TO-92 •SPT TO-92 and its smaller version, the SPT transistors, have conventional leads that fit into PWB mounting holes. Ammo box taped packaging for automated insertion is standard packaging, however, bulk is also available. Package Application

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

2SD1960

Abstract: 2SA1835 2sd1960 transistor transistor 2SC1741 2sa1038 transistor 2SC17415 2SD2152 2SC1740 transistor 2SC2808 2SA1137S
Contextual Info: Transistors TO-92 • SPT TO-92 and its smaller version, the SPT transistors, have conventional leads that fit into PWB mounting holes. Ammo box taped packaging for automated insertion is standard packaging, however, bulk is also available. Pc mW Package

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2sd1954

Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o

pioneer mosfet audio amp ic

Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Contextual Info: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great