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    2SD1258 Search Results

    2SD1258 Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD1258
    Panasonic NPN Transistor Original PDF 46.71KB 3
    2SD1258
    Panasonic Silicon NPN triple diffusion planar type Original PDF 47.32KB 2
    2SD1258
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 98.32KB 2
    2SD1258
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.63KB 1
    2SD1258
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 116.55KB 1
    2SD1258P
    Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF 46.7KB 3
    2SD1258P
    Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF 80.37KB 3
    2SD1258Q
    Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF 80.37KB 3
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    2SD1258 Price and Stock

    Panasonic Electronic Components
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SD12580PL 677
    • 1 $2.02
    • 10 $2.02
    • 100 $1.01
    • 1000 $0.81
    • 10000 $0.81
    Buy Now

    2SD1258 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SD1258

    Contextual Info: Power Transistors 2SD1258 2SD1258 Silicon NPN Triple-Diffused Planar Type Package Dimensions High DC Current Gain hFe , Power Amplifier • Features • High DC current gain (Iife) • Good linearity of DC current gain (hra) • “N Type” package configuration with a cooling fin for direct soldering


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    2sd1258100-c PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) VCBO 200 V VCEO 150 V Emitter-base voltage (Collector open)


    Original
    2002/95/ec2sd1258 PDF

    2SD1258

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original
    2002/95/ec2sd1258 PDF

    2SD1258

    Contextual Info: Power Transistors 2SD1258 2SD1258 Silicon NPN Triple-Diffused Planar Type High DC Current Gain I v e , • Package Dimensions Power Amplifier ■ Features • High DC c u rre n t gain (Iif e ) • Good linearity of DC c u rre n t gain (hra) • “N T y p e” package configuration with a cooling fin for direct soldering


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    2sd1258 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) VCBO 200 V VCEO 150 V Emitter-base voltage (Collector open)


    Original
    2002/95/ec2sd1258 PDF

    2SD1258

    Contextual Info: Power Transistors 2SD1258 Silicon NPN triple diffusion planar type ● ● 1.5±0.1 1.0±0.1 1.1max. 2.0 1.5max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to


    Original
    2sd1258 PDF

    2SD1258

    Contextual Info: Power Transistors 2SD1258 Silicon NPN triple diffusion planar type ● ● 1.5±0.1 1.0±0.1 1.1max. 2.0 1.5max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to


    Original
    2sd1258 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) VCBO 200 V VCEO 150 V Emitter-base voltage (Collector open)


    Original
    2002/95/ec2sd1258 PDF

    2SD1258

    Contextual Info: Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage Emitter open Collector-emitter voltage (Base open) VCBO 200 V VCEO 150 V Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 1


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    2sd1258 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide PDF

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


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    2sd12452sd12462sd12472sd1248k+92sd12492sd1249a2sd12502sd1259a2sb9372sd1260pa80802sd1250a2sd1251 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    t258-omifax062sc1442sd466+12sc5266 PDF

    B1548

    Abstract: 2SB1299A
    Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200


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    t0-220o-220f2sb954/a2sb1052+82sd14802sd1265/ao-220et0220d2sb1169/a2sb1170b15482sb1299a PDF

    B938A

    Abstract: B939A 2SK1967 2SD1316
    Contextual Info: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5


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    o-2202sk1967-2sk782-2sk1308/a-+52sk1846-b938ab939a2sk19672sd1316 PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928 PDF

    2sD1555

    Abstract: 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404
    Contextual Info: - 252 - m tt £ T y p e No. € M a nuf. Z * SANYO He ^ TOSHIBA 2SD 1850 tfi T 2SD 1851 H. j=É 2SD 1852 = & 2SD 1 853 ^ H # 2S D 1854 H £ 2S D 1855 O — A 2SC3746 oori • ]occ <¡0 □— A □— A □— A 2SDÌ826 2SD400 2SC3666 2 S D 1857 i m NEC B


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    2sd18502sd18512sd18522sd1886+162sc25322sd14782sd8922sd16982sd16972sd8932sd15552sd43912sm5832sd14832sd15542sd1994ad18662sd11642sd13472sd2404 PDF

    2SD2502

    Abstract: 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158 T0-220F
    Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Pow er T ransistors (continued) Applica­ V ceo tion Func­ (V) tions Pa ckage (No.) VcE(sat) lc (A) typ. (V) lc Ib T0-220(a) (D56) (A) (mA) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )


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    t0-220t0-220ft0-220et0220d+112sd14742sd17192sd17552sd1776/a2sd1775/a2sd21582sd25022sd25202sd25032sd2375zener 3,5 PDF

    TIP290

    Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
    Contextual Info: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001


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    o-220varot-186o-220o-220ab+10tip2902n4001 diodemj029c2sc1624ytip-2902n2202bdy662sc162502n2204to-202ac PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59 PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


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    mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202 PDF

    diode 2U 66

    Abstract: STI3007 diode 2U 55 2u 85 diode STI-3007 diode 2U SSP60B STH506 2N3741 MOTOROLA 2sc2317
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT ICBO Max PD ON) Min (Hz) (A) Max r Max (s) (CE)Mt 'oper Max (Ohms) Max (°C) 600m 600m 175 175 140 140 J J J J 140 175 140 140 175 J J J J J Package Style Devices 20 Watts or More, (Cont'd)


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    2n37412n3741abdt30bssp58b+14ssp60btip30b2n49202n49232sb954adiode 2u 66sti3007diode 2u 552u 85 diodesti-3007diode 2usth5062n3741 motorola2sc2317 PDF

    Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors (continued) Applica­ V ceo tion Func­ (V) tions High hre lc (A) Pa ckage (No.) VcE(sat) typ. (V) lc Ib (A) (mA) T0-220(a) (D56) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )


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    t0-2202sd14742sd1776/a2sd2158+62sd1775/a2sd17192sd1336/a2sb11082sb11932sd1608 PDF

    2SD1204

    Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
    Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202


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    2sd12012sd12022sd12032sd1204+132sd120520002sd1205a2sd12062sb8942sd12072sd12082sd12782sd12272sd13002sd12252sd1297 equivalent2sd12852sd1240 PDF

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


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    2sc46272sc5021-2sa17902sc4626+162sc46552sc48092sc52952sc48082sa18062sd2345d1274ab1317c4714d1707b1108c2258 transistord2052 transistortransistor b11542sd2504 transistorb1398 PDF